Granted Patent B2

US 12,666,754 · App. 17/711,728 · Granted Jun 23, 2026

Inventors: Roy Meade (Boise, ID); Karan Mehta (Cambridge, MA); Efraim Megged (Mata, IL); Jason Orcutt (Katonah, NY); Milos Popovic (Boulder, CO); Rajeev Ram (Arlington, MA); Jeffrey Shainline (Boulder, CO); Zvi Sternberg (Metar, IL); Vladimir Stojanovic (Berkeley, CA); Ofer Tehar-Zahav (Hadera, IL)

Assignees: Micron Technology, Inc.; Massachusetts Institute of Technology

H10F77/413H10F39/103H10F71/121H10F71/1221H10F77/1642Y02E10/546Y02P70/50

Abstract

Claims (25)

1 . An integrated structure comprising:

a substrate;

an optical isolation region formed in the substrate;

a photonic device over and vertically aligned with the optical isolation region, the photonic device formed of a first polysilicon material;

a transistor having a gate that is formed of a second polysilicon material different from the first polysilicon material and that has a same thickness as the photonic device.

2 . The integrated structure of claim 1 , wherein the gate has a bottom surface coplanar with a bottom surface of the photonic device.

3 . The integrated structure of claim 1 , wherein the photonic device is a first photonic device, and further comprising a second photonic device over the substrate, the second photonic device formed of the second polysilicon material, wherein the first photonic device and second photonic device have the same thickness and different optical properties.

4 . The integrated structure of claim 3 , wherein the first and second polysilicon materials have different optical transmission properties.

5 . The integrated structure of claim 3 , wherein the first and second polysilicon materials reside on a common physical layer of the integrated structure.

6 . The integrated structure of claim 3 , wherein the second photonic device comprises a defect state photodetector.

7 . The integrated structure of claim 1 , wherein the first polysilicon material comprises an amorphized and recrystallized polysilicon material.

8 . The integrated structure of claim 1 , further comprising a nitride material over the photonic device.

9 . The integrated structure of claim 1 , wherein the photonic device comprises a waveguide core.

10 . An integrated structure comprising:

a substrate;

an optical isolation region formed in the substrate;

a photonic device over and vertically aligned with the optical isolation region, the photonic device formed of a first polysilicon material; and

a transistor having a gate that is formed of a second polysilicon material different from the first polysilicon material and that has a same thickness as the photonic device, wherein the first polysilicon material has a lower attenuation than the second polysilicon material.

11 . The integrated structure of claim 10 , wherein the photonic device is a first photonic device, and further comprising a second photonic device over the substrate, the second photonic device comprising the second polysilicon material.

12 . The integrated structure of claim 11 , wherein the first and second photonic devices have different optical transmission properties.

13 . The integrated structure of claim 11 , wherein the second photonic device comprises a defect state photodetector.

14 . The integrated structure of claim 10 , wherein the first and second polysilicon materials reside on a common physical layer of the integrated structure.

15 . The integrated structure of claim 10 , wherein the first polysilicon material comprises an amorphized and recrystallized polysilicon material.

16 . The integrated structure of claim 10 , further comprising a nitride material over the photonic device.

17 . The integrated structure of claim 10 , wherein the photonic device comprises a waveguide core.

Assignments (1)

Continuity (5)

References Cited (38)