Sensor for thermal dissipation measurement
A structure is provided that includes a thermal dissipation measurement sensor located on the frontside or the backside of a semiconductor device. The thermal dissipation measurement sensor includes a first probe region and a second probe region that are interconnected by a plurality of metal lines that are arranged in a serpentine pattern and having at least one non-powered metal line located between, and spaced apart from, each of the metal lines.
1 . A structure comprising:
a semiconductor device having a frontside and a backside; and
a thermal dissipation measurement sensor located on the frontside of the semiconductor device and comprising a first probe region and a second probe region that are interconnected by a plurality of frontside metal lines that are arranged in a serpentine pattern and having at least one non-powered frontside metal line located between, and spaced apart from, each of the frontside metal lines.
2 . The structure of claim 1 , wherein each of the first probe region and the second probe region comprises a pair of metal probes.
3 . The structure of claim 1 , wherein the at least one non-powered frontside metal line comprises a plurality of spaced apart non-powered frontside metal lines.
4 . The structure of claim 1 , further comprising a first frontside metal via connecting the least one least non-powered metal line to the semiconductor device.
5 . The structure of claim 4 , wherein the first frontside metal via is in contact with a frontside source/drain contact structure.
6 . The structure of claim 1 , further comprising a second frontside metal via connecting the least one least non-powered metal line to a metal line present in an interconnect level of a frontside back-end-of-the-line (BEOL) structure.
7 . The structure of claim 1 , further comprising a first frontside metal via connecting the least one non-powered metal line to the semiconductor device, and a second frontside metal via connecting the least one non-powered metal line to a metal line present in a frontside BEOL structure.
8 . The structure of claim 7 , wherein the first frontside metal via is in contact with a frontside source/drain contact structure.
9 . A structure comprising:
a semiconductor device having a frontside and a backside; and
a thermal dissipation measurement sensor located on the backside of the semiconductor device and comprising a first probe region and a second probe region that are interconnected by a plurality of backside metal lines that are arranged in a serpentine pattern and having at least one non-powered backside metal line located between, and spaced apart from, each of the backside metal lines.
10 . The structure of claim 9 , wherein each of the first probe region and the second probe region comprises a pair of metal probes.
11 . The structure of claim 9 , wherein the at least one non-powered backside metal line comprises a plurality of spaced apart non-powered backside metal lines.
12 . The structure of claim 9 , further comprising a first backside metal via connecting a first side of the least non-powered backside metal line to the semiconductor device.
13 . The structure of claim 12 , further comprising a second backside metal via connecting a second side of the least one non-powered backside metal line to a backside power distribution network.
14 . The structure of claim 9 , further comprising a backside power wire electrically connecting a backside power distribution network to a backside placeholder material structure that is in contact with a source/drain region of a transistor of the semiconductor device and at least two other backside power wires in electrical contact with only the backside power distribution network structure.
15 . The structure of claim 9 , wherein the thermal dissipation measurement sensor is located between two adjacent backside power wires that are in electrical contact with at least a backside power distribution network.
16 . The structure of claim 9 , further comprising a backside power wire electrically connecting a backside power distribution network to a backside placeholder material structure that is in contact with a source/drain region of a transistor of the semiconductor device, wherein the source/drain region is further in contact with a frontside source/drain contact structure.