IP Library › Granted Patent US 12,720,760
Granted Patent B2
US 12,720,760 · App. 17/937,043 · Granted Aug 25, 2026

Ferroelectric capacitor within backside interconnect

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Quick Facts
Patent No.
US 12,720,760
App. No.
17/937,043
Filed
Sep 30, 2022
Granted
Aug 25, 2026
Kind
B2
Art Unit
2812
USPC
257/295
Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 11, 2022
From: DUTTA, SOURAV; HARATIPOUR, NAZILA; AVCI, UYGAR E.; KUMAR, VACHON; NEUMANN, CHRISTOPHER M.; SHIVARAMAN, SHRIRAM; CHANG, SOU-CHI; DOYLE, BRIAN S.
To: INTEL CORPORATION
Reel/Frame 061380/0326 →
Continuity (1)
Related Publication 20240114694A1 · Apr 4, 2024
References Cited (10)
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US 20240298452A1 · Hu · 2024 [cited by examiner]
Wai Kit Siu, et al., “A Current-Based Reference-Generation Scheme for 1T-1C Ferroelectric Random-Access Memories,” IEEE Journal of Solid-State Circuits, vol. 38, No. 3. (Mar. 2033). pp. 541-549. [cited by applicant]