Methods for depositing gap-filling fluids and related systems and devices
Methods and systems for filling a gap comprised in the substrate with a gap filling fluid. The gap filling fluid is formed in a plasma with a first precursor and a second precursor.
1 . A method of filling a gap comprising:
introducing a substrate in a reaction chamber, the substrate being provided with a gap;
introducing a reaction gas in the reaction chamber, the reaction gas comprising a noble gas, a first precursor and a second precursor, the first precursor being different from the second precursor; and,
generating a plasma in the reaction chamber,
thereby forming a gap filling fluid that at least partially fills the gap,
wherein at least one of the first precursor and the second precursor is selected from the group consisting of N,N-diethyl-(1,1,2,3,3,3-hexafluoropropyl)amine, N,N-diethyl-(E)-pentafluoropropenylamine, and combinations thereof.
2 . The method according to claim 1 , wherein the reaction gas further comprises a third precursor, wherein the third precursor is different from the first and second precursors.
3 . The method according to claim 1 , wherein the plasma is generated intermittently.
4 . The method according to claim 1 , wherein the plasma is generated continuously.
5 . The method according to claim 1 , wherein at least one of the first precursor and the second precursor is intermittently provided to the reaction chamber.
6 . The method according to claim 1 , wherein at least one of the first precursor and the second precursor is continuously provided to the reaction chamber.
7 . The method according to claim 1 , which is carried out at a temperature of at least −25° C. to at most 150° C.
8 . The method according to claim 1 , which is carried out at a pressure of at least 500 Pa.
9 . The method according to claim 1 , wherein the noble gas is selected from the group consisting of He, Ne, Ar, and Kr.
10 . The method according to claim 1 further including a step of curing the gap filling fluid such that a carbon concentration of a cured gap filling fluid is reduced with respect to an uncured gap filling fluid.
11 . The method according to claim 1 , wherein the substrate comprises a semiconductor.
12 . The method according to claim 1 , wherein the method comprises one or more cycles, wherein a cycle comprises a gap fill fluid forming step and a curing step, wherein the gap fill fluid forming step comprises introducing the reaction gas in the reaction chamber and the curing step comprises generating the plasma in the reaction chamber.
13 . A method of filling a gap comprising:
introducing a substrate in a reaction chamber, the substrate being provided with a gap;
introducing a reaction gas in the reaction chamber, the reaction gas comprising a noble gas, a first precursor and a second precursor, the first precursor being different from the second precursor; and,
generating a plasma in the reaction chamber,
thereby forming a gap filling fluid that at least partially fills the gap,
wherein:
the first precursor is N,N-diethyl-(1,1,2,3,3,3-hexafluoropropyl)amine and the second precursor is N,N-diethyl-(E)-pentafluoropropenylamine; or
the first precursor is N,N-diethyl-(1,1,2,3,3,3-hexafluoropropyl)amine and the second precursor is a metal precursor, or
the first precursor is N,N-diethyl-(E)-pentafluoropropenylamine and the second precursor is a metal precursor.
14 . The method according to claim 13 ,
wherein:
the first precursor is N,N-diethyl-(1,1,2,3,3,3-hexafluoropropyl)amine and the second precursor is a metal precursor, or
the first precursor is N,N-diethyl-(E)-pentafluoropropenylamine and the second precursor is a metal precursor,
and wherein the metal precursor comprises titanium, hafnium, zirconium, or tantalum.
15 . The method according to claim 14 , wherein the metal precursor comprises a tantalum precursor.
16 . The method according to claim 15 , wherein the tantalum precursor is selected from a tantalum alkylamine, a tantalum alkylamine comprising at least two different alkylamine ligands, a heteroleptic alkylamine, and a tantalum halide.
17 . The method according to claim 16 , wherein the tantalum precursor is TaCl 5 .
18 . The method according to claim 16 , wherein the tantalum precursor is a tantalum alkylamine.
19 . The method according to claim 18 , wherein the tantalum precursor is tris(diethylamido)(tert-butylimido) tantalum.
20 . The method according to claim 14 , wherein the reaction gas further comprises a third precursor, wherein the third precursor is different from the first precursor and the second precursor.