Image sensors having shared pixels with deep trench isolations therebetween overlapped by contact barrier structures
An image sensor includes a substrate and first and second shared pixels, which extend adjacent to each other in a first direction across the substrate. Each of the shared pixels includes: a plurality of floating diffusion regions at spaced apart locations within the substrate, and a plurality of spaced-apart source follower gates electrically connected to the plurality of floating diffusion regions. A deep trench isolation structure is provided, which extends within the substrate and at least partially partitions the first and second shared pixels from each other. A contact barrier structure is provided, which extends on the substrate, vertically overlaps the deep trench isolation structure, at least partially partitions the first and second shared pixels from each other, and is arranged with a long axis in a second direction orthogonal to the first direction and between the source follower gate of the first shared pixel and the source follower gate of the second shared pixel.
1 . An image sensor, comprising:
a substrate;
first and second shared pixels, which extend adjacent to each other in a first direction across the substrate, and respectively include:
a plurality of floating diffusion regions at spaced apart locations within the substrate; and
a plurality of spaced-apart source follower gates electrically connected to the plurality of floating diffusion regions;
a deep trench isolation structure, which extends within the substrate and at least partially partitions the first and second shared pixels from each other; and
a contact barrier structure, which extends on the substrate, vertically overlaps the deep trench isolation structure, at least partially partitions the first and second shared pixels from each other, and is arranged with a long axis in a second direction orthogonal to the first direction and between one of the plurality of source follower gates of the first shared pixel and one of the plurality of source follower gates of the second shared pixel.
2 . The image sensor of claim 1 , wherein the plurality of source follower gates include first to third source follower gates; wherein the first and second source follower gates face each other in the first direction and are arranged at both ends in the first direction; and wherein the first and third source follower gates face each other in the second direction and are arranged at one end in the first direction.
3 . The image sensor of claim 2 , wherein the contact barrier structure is arranged between a second source follower gate of the first shared pixel and first and third source follower gates of the second shared pixel.
4 . The image sensor of claim 1 , wherein the plurality of floating diffusion regions include first and second floating diffusion regions, which are spaced apart relative to each other; and wherein each of the first and second floating diffusion regions is shared by a plurality of transfer gates.
5 . The image sensor of claim 4 , wherein the first and second floating diffusion regions are arranged while facing each other in the second direction, and are located in a center area of the plurality of transfer gates.
6 . The image sensor of claim 1 , further comprising a vertical contact electrically connected to the plurality of source follower gates, said vertical contact including substantially the same material as the contact barrier structure.
7 . The image sensor of claim 1 , wherein the deep trench isolation structure and the contact barrier structure are spaced apart from each other in a vertical direction.
8 . The image sensor of claim 7 , wherein an insulation material layer is arranged between the deep trench isolation structure and the contact barrier structure; and wherein a vertical level of a bottom surface of the contact barrier structure is lower than a vertical level of bottom surfaces of the plurality of source follower gates.
9 . The image sensor of claim 7 , wherein an insulation material layer and a silicon material layer are arranged between the deep trench isolation structure and the contact barrier structure; and wherein a vertical level of a bottom surface of the contact barrier structure is substantially the same as a vertical level of bottom surfaces of the plurality of source follower gates.
10 . The image sensor of claim 7 , wherein an insulation material layer and a polysilicon material layer are arranged between the deep trench isolation structure and the contact barrier structure; and wherein a vertical level of a bottom surface of the contact barrier structure is higher than a vertical level of bottom surfaces of the plurality of source follower gates.
11 . An image sensor, comprising:
a substrate;
a first shared pixel including first and second floating diffusion regions in the substrate, first and second source follower gates, a selection gate;
a second shared pixel including first and second floating diffusion regions in the substrate, first and second source follower gates, and a selection gate;
a deep trench isolation structure extending in the substrate, and at least partially partitioning the first shared pixel from the second shared pixel; and
a contact barrier structure, which at least partially overlaps the deep trench isolation structure in a vertical direction, and extends between the first and second shared pixels;
wherein each of the first and second shared pixels includes a plurality of unit pixels; and
wherein, in each of the first and second shared pixels, the first and second source follower gates are arranged at one end in a first horizontal direction and face each other in a second horizontal direction perpendicular to the first horizontal direction, and the selection gate is arranged at another end in the first horizontal direction and faces the first source follower gate in the first horizontal direction.
12 . The image sensor of claim 11 , further comprising:
an output voltage line arranged at one end of the selection gate within the first shared pixel;
wherein the first and second shared pixels are arranged adjacent to each other in the first horizontal direction; and
wherein the contact barrier structure is arranged with a long axis in the second horizontal direction, between the output voltage line and the selection gate of the first shared pixel and the first source follower gate of the second shared pixel.
13 . The image sensor of claim 12 , wherein one sidewall of the contact barrier structure faces the output voltage line and the selection gate of the first shared pixel; and wherein another sidewall of the contact barrier structure faces the first source follower gate of the second shared pixel.
14 . The image sensor of claim 11 , wherein the first and second floating diffusion regions and the first and second source follower gates are all electrically connected to each other via a metal wiring layer.
15 . The image sensor of claim 11 , wherein an insulation material layer is arranged between the deep trench isolation structure and the contact barrier structure; and wherein the deep trench isolation structure and the contact barrier structure are spaced apart from each other in the vertical direction.
16 . An image sensor, comprising:
a substrate;
a first shared pixel including a first sub-pixel having four first unit pixels therein that share a first floating diffusion region, a second sub-pixel having four second unit pixels therein that share a second floating diffusion region, and first, second and third source follower gates;
a second shared pixel extending adjacent to the first shared pixel in a first horizontal direction, said second shared pixel including a first sub-pixel having four first unit pixels therein that share a first floating diffusion region, a second sub-pixel having four second unit pixels therein that share a second floating diffusion region, and first, second and third source follower gates;
first and second transfer gates arranged on the substrate and respectively corresponding to the first and second unit pixels;
a deep trench isolation structure that extends within the substrate and at least partially partitions the first shared pixel from the second shared pixel; and
a contact barrier structure having a long axis in a second horizontal direction perpendicular to the first horizontal direction, extending between the first and second shared pixels, and overlapping the deep trench isolation structure in a vertical direction; and
wherein, in each of the first and second shared pixels, the first and second source follower gates face each other in the first horizontal direction and are arranged at both ends in the first horizontal direction, and the first and third source follower gates face each other in the second horizontal direction and are arranged at one ends in the first horizontal direction.
17 . The image sensor of claim 16 , wherein the first and second source follower gates are arranged in the first sub-pixel; wherein the third source follower gate is arranged in the second sub-pixel; and wherein the first and second floating diffusion regions and the first to third source follower gates are all electrically connected to each other via a metal wiring layer.
18 . The image sensor of claim 17 , wherein the contact barrier structure is arranged between a second source follower gate of the first shared pixel and first and third source follower gates of the second shared pixel.
19 . The image sensor of claim 17 ,
wherein an insulation material layer is arranged between the deep trench isolation structure and the contact barrier structure;
wherein the deep trench isolation structure and the contact barrier structure are spaced apart from each other in the vertical direction; and
wherein a vertical level of a bottom surface of the contact barrier structure is lower than a vertical level of bottom surfaces of the first to third source follower gates.
20 . The image sensor of claim 19 , wherein the contact barrier structure penetrates into a portion of the insulation material layer.