Semiconductor structure and manufacturing method thereof
A semiconductor structure includes a wafer circuit structure, at least one first semiconductor die, at least one first supporting structure, and an encapsulant. The at least one first semiconductor die is disposed over and electrically connected to the wafer circuit structure in a device region of the semiconductor structure. The at least one first supporting structure is disposed over the wafer circuit structure in a peripheral region of the semiconductor structure. The encapsulant is disposed over the wafer circuit structure and encapsulates the at least one first semiconductor die and the at least one first supporting structure, where a thickness of the encapsulant at an edge of the semiconductor structure is less than a thickness of the encapsulant within the device region of the semiconductor structure.
1 . A semiconductor structure, comprising:
a circuit structure;
at least one first semiconductor die, disposed over and electrically connected to the circuit structure in a device region of the semiconductor structure;
at least one first supporting structure, disposed over the circuit structure in a peripheral region of the semiconductor structure;
an encapsulant, disposed over the circuit structure and encapsulating the at least one first semiconductor die and the at least one first supporting structure, wherein a thickness of the encapsulant at an edge of the semiconductor structure is less than a thickness of the encapsulant within the device region of the semiconductor structure;
a redistribution circuit structure, disposed over and electrically connected to the circuit structure, wherein the circuit structure is between the encapsulant and the redistribution circuit structure; and
a plurality of conductive terminals, disposed on and connected to the redistribution circuit structure, wherein the redistribution circuit structure is between the plurality of conductive terminals and the circuit structure.
2 . The semiconductor structure of claim 1 , wherein a thickness of the circuit structure at the edge of the semiconductor structure is greater than a thickness of the circuit structure within the device region of the semiconductor structure.
3 . The semiconductor structure of claim 1 , wherein the encapsulant comprises a first portion and a second portion stacking on the first portion, the first portion is interposed between the circuit structure and the second portion, and the first portion encapsulates the at least one first semiconductor die,
wherein the semiconductor structure further comprises at least one of:
at least one second semiconductor die, disposed over the circuit structure in the device region of the semiconductor structure and electrically connected to the at least one first semiconductor die, wherein the at least one second semiconductor die is encapsulated in the second portion; or
at least one second supporting structure, disposed over the circuit structure in the peripheral region of the semiconductor structure, being encapsulated in the encapsulant, and electrically connected to the circuit structure, wherein the at least one first supporting structure is electrically isolated from the circuit structure.
4 . The semiconductor structure of claim 3 , wherein the at least one first semiconductor die includes a plurality of first semiconductor dies, and the at least one second semiconductor die is electrically connected to two first semiconductor dies of plurality of first semiconductor dies,
wherein the at least one second semiconductor die comprises a bridge die electrically communicating the two first semiconductor dies of plurality of first semiconductor dies.
5 . The semiconductor structure of claim 3 , wherein the at least one second semiconductor die includes a plurality of second semiconductor dies, and the at least one first semiconductor die is electrically connected to two second semiconductor dies of plurality of second semiconductor dies,
wherein the at least one first semiconductor die comprises a bridge die electrically communicating the two second semiconductor dies of plurality of second semiconductor dies.
6 . The semiconductor structure of claim 3 , wherein the at least one first supporting structure comprises:
a first plurality of first supporting structures encapsulated in the first portion;
a second plurality of first supporting structures encapsulated in the second portion; or
a first plurality of first supporting structures encapsulated in the first portion and a second plurality of first supporting structures encapsulated in the second portion, wherein the first plurality of first supporting structures and the second plurality of first supporting structures are electrically isolated from the each other.
7 . The semiconductor structure of claim 3 , wherein the at least one second supporting structure comprises:
a first plurality of second supporting structures encapsulated in the first portion;
a second plurality of second supporting structures encapsulated in the second portion; or
a first plurality of second supporting structures encapsulated in the first portion and a second plurality of second supporting structures encapsulated in the second portion.
8 . The semiconductor structure of claim 1 , wherein a sidewall of the encapsulant is flush with a sidewall of the circuit structure.
9 . The semiconductor structure of claim 1 , further comprising:
a heat dissipating element, disposed over the encapsulant, wherein the encapsulant is between the heat dissipating element and the circuit structure.
10 . The semiconductor structure of claim 1 , wherein the at least one first supporting structure comprises:
a dummy die, wherein the dummy die is electrically isolated from the circuit structure; or
a deep trench capacitor, wherein the deep trench capacitor is electrically connected to the circuit structure.
11 . A semiconductor structure, comprising:
a circuit structure;
at least one first semiconductor die, disposed over and electrically connected to the circuit structure in a device region of the semiconductor structure;
a plurality of supporting structures, disposed over the circuit structure in a peripheral region of the semiconductor structure, wherein the plurality of supporting structures are arranged in a manner of point symmetry in respect to a center of the semiconductor structure, wherein the plurality of supporting structures comprise a plurality of deep trench capacitors, wherein the plurality of deep trench capacitors are electrically connected to the circuit structure; and
an insulating encapsulation, disposed over the circuit structure and encapsulating the at least one first semiconductor die and the plurality of supporting structures.
12 . The semiconductor structure of claim 11 , wherein the plurality of supporting structures are grouped into pairs of supporting structures,
wherein one supporting structure of each pair of the pairs of supporting structures and other one supporting structure of a respective pair of the pairs of supporting structures are arranged in positions within the peripheral region of the semiconductor structure that are passed through by a single line passing the center of the semiconductor structure.
13 . The semiconductor structure of claim 11 , wherein the plurality of supporting structures further comprise a plurality of dummy dies, wherein the plurality of dummy dies are electrically isolated from the circuit structure.
14 . The semiconductor structure of claim 11 , wherein in a cross section along a stacking direction of the circuit structure and the at least one first semiconductor die, the insulating encapsulation has a surface constituted by a substantial planar surface at the device region and a substantial slant planar surface at the peripheral region surrounding and joined to the substantial planar surface, the substantial slant planar surface being joined to the substantial planar surface and a sidewall of the insulating encapsulation and exposing at least one of the plurality of supporting structures, and the substantial planar surface exposing the at least one first semiconductor die.
15 . The semiconductor structure of claim 11 , further comprising:
a redistribution circuit structure, disposed over and electrically connected to the circuit structure, wherein the circuit structure is between the insulating encapsulation and the redistribution circuit structure; and
a plurality of conductive terminals, disposed on and connected to the redistribution circuit structure, wherein the redistribution circuit structure is between the plurality of conductive terminals and the circuit structure.
16 . A method of manufacturing a semiconductor structure, comprising:
providing at least one first semiconductor die in a device region of the semiconductor structure;
providing at least one first supporting structure in a peripheral region of the semiconductor structure, the peripheral region surrounding the device region;
laterally encapsulating the at least one first semiconductor die and the at least one first supporting structure in an encapsulant, wherein a thickness of the encapsulant at an edge of the semiconductor structure is less than a thickness of the encapsulant within the device region of the semiconductor structure;
forming a circuit structure over the at least one first semiconductor die and the at least one first supporting structure encapsulated in the encapsulant, the circuit structure electrically connecting the at least one first semiconductor die, and a sidewall of the encapsulant being flush with a sidewall of the circuit structure;
disposing a redistribution circuit structure over the circuit structure, the redistribution circuit structure being electrically connected to the circuit structure, wherein the circuit structure is between the encapsulant and the redistribution circuit structure; and
disposing a plurality of conductive terminals on the redistribution circuit structure, the plurality of conductive terminals being connected to the redistribution circuit structure, wherein the redistribution circuit structure is between the plurality of conductive terminals and the circuit structure.
17 . The method of claim 16 , further comprising:
providing at least one second semiconductor die, wherein:
providing the at least one first semiconductor die comprises providing a plurality of first semiconductor dies, and
laterally encapsulating the at least one first semiconductor die and the at least one first supporting structure in the encapsulant comprises laterally encapsulating the plurality of first semiconductor dies, the at least one first supporting structure and the at least one second semiconductor die in the encapsulant by:
forming a first insulating material over the at least one second semiconductor die, wherein the at least one second semiconductor die is not revealed by the first insulating material;
performing a first planarization process on the first insulating material to remove a portion of the first insulating material so to form a first portion of the encapsulant revealing the at least one second semiconductor die;
forming a second insulating material over the first portion of the encapsulant to cover the plurality of first semiconductor dies and the at least one first supporting structure, wherein the plurality of first semiconductor dies and the at least one first supporting structure are not revealed by the second insulating material; and
performing a second planarization process on the second insulating material to remove a portion of the second insulating material so to form a second portion of the encapsulant revealing the plurality of first semiconductor dies and the at least one first supporting structure, wherein a portion of the at least one first supporting structure is also removed in the second planarization process,
wherein the second portion of the encapsulant is between the first portion of the encapsulant and the circuit structure, and two first semiconductor dies of the plurality of first semiconductor dies are electrically connected to and electrically communicated to each other through the at least one second semiconductor die.
18 . The method of claim 17 , further comprising providing at least one second supporting structure,
wherein:
forming the second insulating material over the first portion of the encapsulant to cover the plurality of first semiconductor dies and the at least one first supporting structure comprises forming the second insulating material over the first portion of the encapsulant to cover the plurality of first semiconductor dies, the at least one first supporting structure and the at least one second supporting structure, so that the plurality of first semiconductor dies, the at least one first supporting structure and the at least one second supporting structure are not revealed by the second insulating material; and
performing the second planarization process on the second insulating material to remove the portion of the second insulating material so to form the second portion of the encapsulant revealing the plurality of first semiconductor dies and the at least one first supporting structure comprises performing the second planarization process on the second insulating material to remove the portion of the second insulating material so to form the second portion of the encapsulant revealing the plurality of first semiconductor dies, the at least one first supporting structure and the at least one second supporting structure,
wherein one of the at least one first supporting structure and the at least one second supporting structure is electrically isolated from the circuit structure, while other one of the at least one first supporting structure and the at least one second supporting structure is electrically connected to the circuit structure.
19 . The method of claim 16 , further comprising:
providing at least one second semiconductor die; and
providing a first group of second supporting structures and a second group of second supporting structures, wherein:
providing the at least one first semiconductor die comprises providing a first group of first semiconductor dies and a second group of first semiconductor dies;
providing the at least one first supporting structure comprises providing a first group of first supporting structures and a second group of first supporting structures; and
laterally encapsulating the at least one first semiconductor die and the at least one first supporting structure in the encapsulant comprises laterally encapsulating the first group of first semiconductor dies, the second group of first semiconductor dies, the first group of first supporting structures, the second group of first supporting structures, the first group of second supporting structures, the second group of second supporting structures and the at least one second semiconductor die by:
forming a first insulating material over the first group of first semiconductor dies, the first group of first supporting structures, the first group of second supporting structures and the at least one second semiconductor die, wherein the first group of first semiconductor dies, the first group of first supporting structures, the first group of second supporting structures and the at least one second semiconductor die are not revealed by the first insulating material;
performing a first planarization process on the first insulating material to remove a portion of the first insulating material so to form a first portion of the encapsulant revealing the first group of first semiconductor dies, the first group of first supporting structures, the first group of second supporting structures and the at least one second semiconductor die, wherein at least one of a portion of at least one of the first group of first supporting structures or a portion of at least one of the first group of second supporting structures is also removed in the first planarization process;
forming a second insulating material over the first portion of the encapsulant to cover the second group of first semiconductor dies, the second group of first supporting structures and the second group of second supporting structures, wherein the second group of first semiconductor dies, the second group of first supporting structures and the second group of second supporting structures are not revealed by the second insulating material; and
performing a second planarization process on the second insulating material to remove a portion of the second insulating material so to form a second portion of the encapsulant revealing the second group of first semiconductor dies, the second group of first supporting structures and the second group of second supporting structures, wherein at least one of a portion of at least one of the second group of first supporting structures or a portion of at least one of the second group of second supporting structures is also removed in the second planarization process,
wherein the first portion of the encapsulant is between the second portion of the encapsulant and the circuit structure, and two first semiconductor dies of the plurality of first semiconductor dies are electrically connected to and electrically communicated to each other through the at least one second semiconductor die,
wherein the first group of first supporting structures and the second group of first supporting structures are respectively overlapped with each other, and the first group of second supporting structures and the second group of second supporting structures are respectively overlapped with each other, and
wherein the first group of second supporting structures and the second group of second supporting structures are electrically connected to the circuit structure.
20 . The method of claim 16 , wherein laterally encapsulating the at least one first semiconductor die and the at least one first supporting structure in the encapsulant comprises:
forming an insulating material over the at least one first semiconductor die and the at least one first supporting structure, so that the at least one first semiconductor die and the at least one first supporting structure are not revealed by the insulating material; and
performing a planarization process on the insulating material to remove a portion of the insulating material so to form the encapsulant revealing the at least one first semiconductor die and the at least one first supporting structure, wherein a portion of the at least one first supporting structure is also removed in the planarization process.