IP Library Granted Patent US 12,740,415
Granted Patent B2
US 12,740,415 · App. 18/514,514 · Granted Sep 15, 2026

Semiconductor device with 2-phase cooling structure

Inventors: Sungchan Kang (Suwon-si, KR); Daehyuk Son (Suwon-si, KR); Seogwoo Hong (Suwon-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H10W40/73H10W90/00H10W90/288
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Quick Facts
Patent No.
US 12,740,415
App. No.
18/514,514
Granted
Sep 15, 2026
Kind
B2
Abstract

A semiconductor device includes: a semiconductor chip; a cooling channel configured to allow a coolant to (i) flow in liquid phase and (ii) absorb heat generated by the semiconductor chip during operation; and a wick structure configured to generate a capillary force for moving the coolant in the liquid phase along a wall surface of the cooling channel. The wick structure includes a suspended wick structure that is disposed apart from the wall surface by a capillary distance.

Claims (62)

1 . A semiconductor device comprising:

a semiconductor chip;

a cooling channel configured to allow a coolant to (i) flow in liquid phase and (ii) absorb heat generated by the semiconductor chip during operation; and

a wick structure configured to generate a capillary force for moving the coolant in the liquid phase along a wall surface of the cooling channel,

wherein the wick structure comprises a suspended wick structure that is disposed apart from the wall surface by a capillary distance,

wherein the cooling channel is formed by recessing an upper surface of the semiconductor chip and comprises:

a bottom disposed in a horizontal direction parallel to an upper surface of the semiconductor chip; and

a side wall disposed in a vertical direction, the side wall connecting the upper surface of the semiconductor chip and the bottom of the cooling channel to each other,

wherein the suspended wick structure comprises a first wick structure that is disposed apart from the side wall of the cooling channel.

2 . The semiconductor device of claim 1 , wherein the first wick structure is configured to form:

a first vertical capillary channel that is configured to move the coolant in the vertical direction inside the cooling channel; and

a second vertical capillary channel that is disposed between the first wick structure and the side wall of the cooling channel and is configured to move the coolant in the vertical direction.

3 . The semiconductor device of claim 2 , wherein the first wick structure comprises a plurality of ridges extending from the bottom of the cooling channel to positions adjacent to the upper surface of the semiconductor chip.

4 . The semiconductor device of claim 1 , wherein the wick structure further comprises a second wick structure that is disposed on the bottom of the cooling channel and is configured to move the coolant along the bottom of the cooling channel in the horizontal direction by generating a second capillary force.

5 . The semiconductor device of claim 1 , wherein the suspended wick structure further comprises a second wick structure that is disposed apart from the bottom of the cooling channel.

6 . The semiconductor device of claim 1 , further comprising a package housing enclosing the semiconductor chip,

wherein the package housing comprises:

a discharge opening through which the coolant is configured to be discharged in vapor phase from the cooling channel; and

a supply opening through which the coolant is configured to be supplied in the liquid phase to the cooling channel.

7 . The semiconductor device of claim 6 ,

wherein the cooling channel comprises a plurality of cooling channels disposed in the semiconductor chip, and

wherein the discharge opening comprises a plurality of discharge openings disposed in the package housing and respectively corresponding to the plurality of cooling channels.

8 . The semiconductor device of claim 6 , further comprising a supply channel configured to guide the coolant supplied in the liquid phase through the supply opening to the cooling channel,

wherein the supply channel comprises a supply wick structure that is disposed on an upper surface of the semiconductor chip and is configured to generate a second capillary force for moving the coolant in the liquid phase along the upper surface of the semiconductor chip.

9 . The semiconductor device of claim 1 , further comprising:

a coolant storage portion configured to accommodate the coolant in the liquid phase and supply the coolant in the liquid phase to the cooling channel;

a supply channel comprising a supply wick structure that is disposed on an upper surface of the semiconductor chip and is configured to generate a second capillary force for moving the coolant in the liquid phase along the upper surface of the semiconductor chip, the supply channel being configured to guide the coolant supplied in the liquid phase from the coolant storage portion to the cooling channel; and

a package housing enclosing the semiconductor chip,

wherein the coolant storage portion is disposed in the package housing.

10 . The semiconductor device of claim 9 , wherein the package housing comprises:

an upper wall disposed apart from the upper surface of the semiconductor chip to form a space between the upper wall and the upper surface of the semiconductor chip, the space being disposed in communication with the cooling channel; and

a side wall disposed apart from an outer wall of the semiconductor chip, the side wall forming the coolant storage portion between the side wall and the outer wall of the semiconductor chip,

wherein an outer supply wick structure is disposed on the outer wall of the semiconductor chip to generate a third capillary force for supplying the coolant accommodated in the liquid phase inside the coolant storage portion to the supply channel.

11 . The semiconductor device of claim 9 ,

wherein the coolant storage portion is formed by recessing the upper surface of the semiconductor chip, and

wherein an outer supply wick structure is disposed on a side wall of the coolant storage portion is configured to generate a third capillary force for supplying the coolant accommodated in the liquid phase inside the coolant storage portion to the supply channel.

12 . The semiconductor device of claim 1 ,

wherein the semiconductor chip comprises a plurality of semiconductor chips,

wherein the cooling channel comprises a plurality of cooling channels,

wherein each of the plurality of semiconductor chips respectively comprises a corresponding cooling channel of the plurality of cooling channels,

wherein the plurality of semiconductor chips are stacked in the vertical direction,

wherein each of the plurality of semiconductor chips except for a lowermost semiconductor chip comprises a connection channel penetrating therethrough in the vertical direction, and

wherein a connection wick structure is disposed on at least a portion of a wall surface of the connection channel that is configured to move the coolant in the liquid phase by generating a second capillary force.

13 . A semiconductor device comprising:

a semiconductor chip;

a supply channel disposed on an upper surface of the semiconductor chip that is configured to move a coolant in liquid phase along the upper surface of the semiconductor chip by capillary action;

a cooling channel formed by recessing the upper surface of the semiconductor chip, the cooling channel comprising:

a bottom that is parallel to the upper surface and

a side wall that connects the upper surface of the semiconductor chip and the bottom to each other; and

a first wick structure disposed apart from the side wall of the cooling channel that is configured to supply the coolant in the liquid phase to the bottom of the cooling channel along the side wall of the cooling channel by capillary action.

14 . The semiconductor device of claim 13 , further comprising a second wick structure configured to move the coolant along the bottom of the cooling channel by capillary action.

15 . The semiconductor device of claim 14 , wherein the second wick structure is disposed apart from the bottom of the cooling channel.

16 . The semiconductor device of claim 13 , further comprising a package housing enclosing the semiconductor chip,

wherein a supply opening is disposed in the package housing to form a path for supplying the coolant in the liquid phase to the supply channel.

17 . The semiconductor device of claim 16 , wherein a discharge opening communicating with the cooling channel is disposed in the package housing to discharge the coolant in vapor phase from the cooling channel when the coolant transitions from the liquid phase to the vapor phase in the cooling channel by absorbing heat from the semiconductor chip.

18 . The semiconductor device of claim 17 , wherein the supply opening and the discharge opening are disposed apart from each other.

19 . The semiconductor device of claim 13 , further comprising:

a coolant storage portion configured to accommodate the coolant in the liquid phase and supply the coolant in the liquid phase to the cooling channel; and

a package housing enclosing the semiconductor chip,

wherein the supply channel comprises a supply wick structure that is disposed on the upper surface of the semiconductor chip and is configured to move the coolant in liquid phase along the upper surface of the semiconductor chip by capillary action,

wherein the supply channel guides the coolant supplied in the liquid phase from the coolant storage portion to the cooling channel, and

wherein the coolant storage portion is disposed in the package housing.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 20, 2023
From: KANG, SUNGCHAN; SON, DAEHYUK; HONG, SEOGWOO
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 065622/0860 →
Priority Claims (2)
KR 10-2023-0039008 · Mar 24, 2023 · national
KR 10-2023-0062694 · May 15, 2023 · national
Continuity (1)
Related Publication 20240321680A1 · Sep 26, 2024
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