IP Library › Granted Patent US 12,740,418
Granted Patent B2
US 12,740,418 · App. 18/358,195 · Granted Sep 15, 2026

Semiconductor device packaging warpage control

Inventors: Scott M. Hayes (Chandler, AZ); Michael B. Vincent (Chandler, AZ); Zhiwei Gong (Chandler, AZ); Richard Te Gan (Chandler, AZ); Vivek Gupta (Phoenix, AZ)
Assignee: NXP USA, Inc.
H10W42/121H10W74/014H10P72/74H10W74/019
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Quick Facts
Patent No.
US 12,740,418
App. No.
18/358,195
Granted
Sep 15, 2026
Kind
B2
Abstract

A method of manufacturing a semiconductor device packaging panel is provided. The method includes forming a panel having an active side and a backside. The panel includes a plurality of semiconductor die encapsulated with an encapsulant. An active surface of the semiconductor die is exposed on the active side of the panel. A warpage control carrier is attached onto the backside of the panel. The warpage control carrier includes an electroactive element configured for substantially flattening the panel while a control voltage is applied to the electroactive element.

Claims (25)

1 . An apparatus for manufacturing a semiconductor device packaging panel, the apparatus comprising:

a warpage control carrier configured to substantially flatten a panel while attached to the panel, the warpage control carrier including an electroactive element configured for substantially flattening the panel while a control voltage is applied to the electroactive element.

2 . The apparatus of claim 1 , wherein the warpage control carrier includes a strain gauge element configured for providing an output voltage indicative of panel warpage while the warpage control carrier is attached to the panel.

3 . The apparatus of claim 2 , wherein the control voltage applied to the electroactive element is based on the output voltage of the strain gauge.

4 . The apparatus of claim 3 , wherein the warpage control carrier further includes a film formed over the electroactive element, the strain gauge integrated in the film, the film configured for attachment to the panel by way of a thermal releasable adhesive.

5 . The apparatus of claim 1 , wherein the electroactive element of the warpage control carrier is in the form of a linear strip or a circular strip.

6 . The apparatus of claim 1 , wherein the warpage control carrier further includes a second electroactive element configured to receive a second control voltage, the second electroactive element located in a region of the warpage control carrier different from the electroactive element.

7 . The apparatus of claim 6 , wherein the warpage control carrier is further configured for substantially flattening the panel while the control voltage is applied to the electroactive element and the second control voltage is applied to the second electroactive element.

8 . The apparatus of claim 6 , wherein the second electroactive element is oriented orthogonal to the electroactive element.

9 . An apparatus for manufacturing a semiconductor device packaging panel, the apparatus comprising:

a warpage control carrier formed from a flexible material, the warpage control carrier configured to substantially flatten a temporarily attached semiconductor device packaging panel, the warpage control carrier including a first electroactive element configured for substantially flattening the semiconductor device packaging panel while a first control voltage is applied to the first electroactive element.

10 . The apparatus of claim 9 , wherein the warpage control carrier further includes a sensor element configured to provide an output voltage indicative of panel warpage while the warpage control carrier is temporarily attached to the semiconductor device packaging panel.

11 . The apparatus of claim 10 , wherein the sensor element is characterized as a strain gauge element configured for providing the output voltage indicative of panel warpage.

12 . The apparatus of claim 10 , wherein the first control voltage applied to the first electroactive element is based on the output voltage of the sensor element.

13 . The apparatus of claim 10 , wherein the warpage control carrier further includes a film formed over the first electroactive element, the sensor element integrated in the film.

14 . The apparatus of claim 9 , wherein the first electroactive element of the warpage control carrier is in the form of a linear strip or a circular strip.

15 . The apparatus of claim 9 , wherein the warpage control carrier further includes a second electroactive element configured to receive a second control voltage, the first electroactive element located in a first region of the warpage control carrier and the second electroactive element located in a second region of the warpage control carrier.

16 . The apparatus of claim 15 , wherein the warpage control carrier is further configured for substantially flattening the semiconductor device packaging panel while the first control voltage is applied to the first electroactive element and the second control voltage is applied to the second electroactive element.

17 . The apparatus of claim 15 , wherein the first electroactive element located in the first region of the warpage control carrier is oriented orthogonal to the second electroactive element located in the second region of the warpage control carrier.

18 . An apparatus for manufacturing a semiconductor device packaging panel, the apparatus comprising:

a warpage control carrier configured for temporary attachment of a semiconductor device packaging panel, the warpage control carrier comprising:

a first electroactive element configured for substantially flattening the semiconductor device packaging panel while a first control voltage is applied to the first electroactive element; and

a sensor element configured to provide an output voltage indicative of panel warpage while the warpage control carrier is attached to the semiconductor device packaging panel, the first control voltage based on the output voltage.

19 . The apparatus of claim 18 , wherein the warpage control carrier further includes a second electroactive element configured to receive a second control voltage, the first electroactive element located in a first region of the warpage control carrier and the second electroactive element located in a second region of the warpage control carrier.

20 . The apparatus of claim 19 , wherein the first electroactive element located in the first region of the warpage control carrier is oriented orthogonal to the second electroactive element located in the second region of the warpage control carrier.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 25, 2023
From: HAYES, SCOTT M.; VINCENT, MICHAEL B.; GONG, ZHIWEI; GAN, RICHARD TE; GUPTA, VIVEK
To: INC., NXP USA, INC.
Reel/Frame 064372/0887 →
Continuity (2)
Division 17230098 · Apr 14, 2021
Related Publication 20230369248A1 · Nov 16, 2023
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