Semiconductor device and method of forming an antenna-in-package structure
A semiconductor device has a substrate including an antenna formed in a first area of the substrate. A first electrical component is disposed over a second area of the substrate. A conductive pillar is disposed on the substrate adjacent to the first electrical component. A second electrical component is disposed on the conductive pillar and over the first electrical component. An interconnect structure is disposed over a third area of the substrate. A first encapsulant is deposited over the first electrical component and interconnect structure. A second encapsulant is deposited over the second electrical component. A third encapsulant is disposed over the antenna. The third encapsulant includes a higher dielectric constant than the first encapsulant and second encapsulant.
1 . A semiconductor device, comprising:
a substrate including an antenna formed in a first area of the substrate, wherein a thickness of the first area of the substrate is greater than a thickness of a second area of the substrate and also greater than a thickness of a third area of the substrate, and wherein the first area of the substrate is formed thicker than the second area and third area by successively forming upper conductive layers and upper insulating layers over the first area directly on lower conductive layers and lower insulating layers that extend over the first area, the second area, and the third area;
a first electrical component disposed over the second area of the substrate;
a conductive pillar disposed on the substrate adjacent to the first electrical component;
a second electrical component disposed on the conductive pillar and over the first electrical component;
an interconnect structure disposed over the third area of the substrate;
a first encapsulant deposited over the first electrical component and interconnect structure;
a second encapsulant deposited over the second electrical component; and
a third encapsulant disposed over the antenna, wherein the third encapsulant includes a higher dielectric constant than the first encapsulant and second encapsulant.
2 . The semiconductor device of claim 1 , wherein the second electrical component is part of a subpackage.
3 . The semiconductor device of claim 1 , further including a connector mounted over the interconnect structure.
4 . The semiconductor device of claim 3 , further including a shielding layer formed over the first encapsulant and second encapsulant, wherein the shielding layer extends between the connector and interconnect structure.
5 . The semiconductor device of claim 1 , further including a lid disposed over the second electrical component.
6 . The semiconductor device of claim 5 , further including a heatsink or heat pipe disposed over the lid.
7 . A semiconductor device, comprising:
a substrate including an antenna formed in or on a first area of the substrate, wherein the first area of the substrate has a first thickness greater than a second thickness of a second area of the substrate;
a first electrical component disposed over the second area of the substrate;
a second electrical component disposed over the first electrical component; and
a first encapsulant disposed over the antenna.
8 . The semiconductor device of claim 7 , further including a second encapsulant disposed over the second electrical component, wherein the first encapsulant has a higher dielectric constant than the second encapsulant.
9 . The semiconductor device of claim 7 , wherein the first encapsulant extends to the first electrical component and second electrical component.
10 . The semiconductor device of claim 7 , further including an interconnect structure disposed adjacent to the first electrical component between the second electrical component and substrate.
11 . The semiconductor device of claim 7 , further including a lid disposed over the second electrical component.
12 . The semiconductor device of claim 7 , further including an underfill disposed between the first electrical component and second electrical component.
13 . A method of making a semiconductor device, comprising:
providing a substrate including an antenna formed in a first area of the substrate, wherein a thickness of the first area of the substrate is greater than a thickness of a second area of the substrate and also greater than a thickness of a third area of the substrate, and wherein the first area of the substrate is formed thicker than the second area and third area by successively forming upper conductive layers and upper insulating layers over the first area directly on lower conductive layers and lower insulating layers that extend over the first area, the second area, and the third area;
disposing a first electrical component over a second area of the substrate;
disposing a conductive pillar on the substrate adjacent to the first electrical component;
disposing an interconnect structure over a third area of the substrate;
depositing a first encapsulant over the first electrical component and interconnect structure;
disposing a second electrical component on the conductive pillar and over the first electrical component;
depositing a second encapsulant over the second electrical component; and
disposing a third encapsulant over the antenna, wherein the third encapsulant includes a higher dielectric constant than the first encapsulant and second encapsulant.
14 . The method of claim 13 , wherein the second electrical component is part of a subpackage.
15 . The method of claim 13 , further including mounting a connector over the interconnect structure.
16 . The method of claim 15 , further including forming a shielding layer over the first encapsulant and second encapsulant.
17 . The method of claim 13 , further including disposing a lid over the second electrical component.
18 . The method of claim 17 , further including disposing a heatsink or heat pipe over the lid.
19 . A method of making a semiconductor device, comprising:
providing a substrate including an antenna formed in or on a first area of the substrate, wherein the first area of the substrate has a first thickness greater than a second thickness of a second area of the substrate;
disposing a first electrical component over the second area of the substrate;
disposing a second electrical component over the first electrical component; and
disposing a first encapsulant over the antenna.
20 . The method of claim 19 , further including depositing a second encapsulant over the second electrical component, wherein the first encapsulant has a higher dielectric constant than the second encapsulant.
21 . The method of claim 19 , further including depositing the first encapsulant to extend to the first electrical component and second electrical component.
22 . The method of claim 19 , further including disposing an interconnect structure adjacent to the first electrical component between the second electrical component and substrate.
23 . The method of claim 19 , further including disposing a lid over the second electrical component.
24 . The method of claim 19 , further including disposing an underfill between the first electrical component and second electrical component.