Granted Patent B2

US 12,745,507 · App. 17/495,162 · Granted Sep 22, 2026

Inventors: Dae-Hee Lee (Hwaseong-si, KR); Yeonkyung Lee (Seongnam-si, KR); Tae Hyung Kim (Seoul, KR); Heejae Lee (Seongnam-si, KR); Eun Joo Jang (Suwon-si, KR); Dae Young Chung (Suwon-si, KR); Soonmin Cha (Suwon-si, KR)

Assignees: SAMSUNG ELECTRONICS CO., LTD.; SAMSUNG DISPLAY CO., LTD.

H10K50/11H10K50/115H10K50/15H10K85/10H10K2101/30H10K2101/40

Abstract

Claims (46)

1 . A quantum dot device, comprising

a first electrode and a second electrode,

a light emitting layer between the first electrode and the second electrode, the light emitting layer comprising quantum dots, and

a first hole auxiliary layer between the first electrode and the light emitting layer,

wherein the first hole auxiliary layer comprises

a first hole auxiliary material, and

a second hole auxiliary material having a greater bandgap energy than a bandgap energy of the first hole auxiliary material,

wherein a difference between a highest occupied molecular orbital energy level of the second hole auxiliary material and a highest occupied molecular orbital energy level of the first hole auxiliary material is 0.1 electronvolts to less than 0.8 electronvolts,

a difference between a lowest unoccupied molecular orbital energy level of the second hole auxiliary material and a lowest unoccupied molecular orbital energy level of the first hole auxiliary material is greater than or equal to 0.3 electronvolts,

the highest occupied molecular orbital energy level of the second hole auxiliary material is less than the highest occupied molecular orbital energy level of the first hole auxiliary material, the highest occupied molecular orbital energy level of the first hole auxiliary material is 5.1 electronvolts to 5.6 electonvolts,

the lowest unoccupied molecular orbital energy level of the second hole auxiliary material is less than the lowest unoccupied molecular orbital energy level of the first hole auxiliary material,

the first hole auxiliary layer comprises less of the second hole auxiliary material than the first hole auxiliary material on a mole basis,

each of the first hole auxiliary material and the second hole auxiliary material is a polymer semiconductor, the second hole auxiliary material comprising the polymer semiconductor comprising a triphenylamine moiety, and

the lowest unoccupied molecular orbital energy level of the second hole auxiliary material is 1.2 electronvolts to 2.0 electronvolts.

2 . The quantum dot device of claim 1 , wherein the first hole auxiliary material and the second hole auxiliary material are blended in the first hole auxiliary layer.

3 . The quantum dot device of claim 1 , wherein

the highest occupied molecular orbital energy level of the first hole auxiliary material is between a work function of the first electrode and a highest occupied molecular orbital energy level of the light emitting layer, and

the highest occupied molecular orbital energy level of the second hole auxiliary material is between the work function of the first electrode and the highest occupied molecular orbital energy level of the light emitting layer.

4 . The quantum dot device of claim 1 , wherein

the highest occupied molecular orbital energy level of the second hole auxiliary material is 4.8 electronvolts to less than 5.4 electronvolts.

5 . The quantum dot device of claim 1 , wherein

the lowest unoccupied molecular orbital energy level of the first hole auxiliary material is 2.4 electronvolts to 2.8 electronvolts.

6 . The quantum dot device of claim 1 , wherein the bandgap energy of the second hole auxiliary material is 0.5 electronvolts to 1.2 electronvolts greater than the bandgap energy of the first hole auxiliary material.

7 . The quantum dot device of claim 1 , wherein

the highest occupied molecular orbital energy level of the second hole auxiliary material is 5.0 electronvolts to less than 5.4 electronvolts, and

the lowest unoccupied molecular orbital energy level of the second hole auxiliary material is 1.5 electronvolts to 1.9 electronvolts, respectively.

8 . The quantum dot device of claim 7 , wherein the bandgap energy of the second hole auxiliary material is greater than or equal to 3.0 electronvolts.

9 . The quantum dot device of claim 1 , wherein the first hole auxiliary material and the second hole auxiliary material are soluble in the same solvent.

10 . The quantum dot device of claim 1 , wherein a mole ratio of the second hole auxiliary material to the first hole auxiliary material in the first hole auxiliary layer is 0.01:1 to 0.8:1.

11 . The quantum dot device of claim 1 , further comprising a second hole auxiliary layer between the first electrode and the first hole auxiliary layer.

12 . An electronic device comprising the quantum dot device of claim 1 .

13 . A quantum dot device, comprising

a first electrode and a second electrode,

a light emitting layer between the first electrode and the second electrode, the light emitting layer comprising quantum dots,

a first hole auxiliary layer between the first electrode and the light emitting layer, the first hole auxiliary layer comprising a mixture of a first hole auxiliary material and a second hole auxiliary material, and

a second hole auxiliary layer between the first electrode and the first hole auxiliary layer,

wherein the first hole auxiliary layer comprises less of the second hole auxiliary material than the first hole auxiliary material on a mole basis,

each of the first hole auxiliary material and the second hole auxiliary material is a polymer semiconductor, the second hole auxiliary material comprising the polymer semiconductor comprising a triphenylamine moiety,

a highest occupied molecular orbital energy level of the first hole auxiliary material is 5.1 electronvolts to 5.6 electonvolts,

a highest occupied molecular orbital energy level of the second hole auxiliary material is 5.0 electronvolts to less than 5.4 electronvolts,

a lowest unoccupied molecular orbital energy level of the second hole auxiliary material is 1.5 electronvolts to 1.9 electronvolts, and

a bandgap energy of a second hole auxiliary material is 0.5 electronvolts to 1.2 electronvolts greater than the bandgap energy of the first hole auxiliary material.

14 . The quantum dot device of claim 13 , wherein a mole ratio of the first hole auxiliary material and the second hole auxiliary material in the first hole auxiliary layer is 2:1 to 5:1.

15 . The quantum dot device of claim 13 , wherein a lowest unoccupied molecular orbital energy level of the first hole auxiliary material is 2.4 electronvolts to 2.8 electronvolts.

16 . The quantum dot device of claim 13 , wherein the first hole auxiliary material comprises the polymer semiconductor comprising a triphenylamine moiety.

17 . An electronic device comprising the quantum dot device of claim 13 .

Assignments (2)

Priority Claims (1)

Continuity (1)

References Cited (39)