Granted Patent B2

US 12,745,513 · App. 18/270,770 · Granted Sep 22, 2026

Inventors: Shunpei Yamazaki (Tokyo, JP); Yasuhiro Jinbo (Isehara, JP); Yuichi Yanagisawa (Atsugi, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

H10K59/122H10K59/1201H10K59/123H10K59/80521H10K59/873H10K71/60H10K59/879

Abstract

Claims (80)

1 . A display device comprising a first light-emitting element; a second light-emitting element; and a gap,

wherein the first light-emitting element comprises a first lower electrode, a first light-emitting layer over the first lower electrode, and a first upper electrode over the first light-emitting layer,

wherein the second light-emitting element comprises a second lower electrode, a second light-emitting layer over the second lower electrode, and a second upper electrode over the second light-emitting layer,

wherein the first light-emitting element is adjacent to the second light-emitting element,

wherein the gap is a region containing a gas,

wherein the gap is provided between the first upper electrode and first light-emitting layer and the second upper electrode and second light-emitting layer,

wherein the first lower electrode is in contact with a first side surface of the gap,

wherein the second lower electrode is in contact with a second side surface of the gap,

wherein the first light-emitting layer is in contact with the first side surface of the gap,

wherein the second light-emitting layer is in contact with the second side surface of the gap,

wherein the first upper electrode comprises a region projecting from a side surface of the first light-emitting layer, and

wherein the second upper electrode comprises a region projecting from a side surface of the second light-emitting layer.

2 . The display device according to claim 1 , comprising a region where a distance between a side surface of the first upper electrode and a side surface of the second upper electrode is shorter than or equal to 1 μm.

3 . The display device according to claim 2 , comprising a region where a distance between the side surface of the first upper electrode and the side surface of the second upper electrode is shorter than or equal to 100 nm.

4 . The display device according to claim 1 ,

wherein the gap comprises the gas containing any one or more selected from nitrogen, oxygen, carbon dioxide, and a Group 18 element.

5 . The display device according to claim 4 ,

wherein the Group 18 element is one or more selected from helium, neon, argon, xenon, and krypton.

6 . The display device according to claim 1 ,

wherein a refractive index of the first light-emitting layer and a refractive index of the second light-emitting layer are higher than a refractive index of the gap.

7 . The display device according to claim 1 ,

wherein the first light-emitting element and the second light-emitting element are provided over an insulating layer,

wherein a top surface of the insulating layer comprises a region in contact with a bottom surface of the gap, and

wherein a thickness of the insulating layer in the region where the top surface of the insulating layer is in contact with the bottom surface of the gap is smaller than a thickness of the insulating layer in a region overlapping with the first light-emitting layer and a thickness of the insulating layer in a region overlapping with the second light-emitting layer.

8 . The display device according to claim 1 ,

wherein a protective layer is provided over the first upper electrode and the second upper electrode, and

wherein the protective layer comprises a region in contact with a top surface of the gap.

9 . The display device according to claim 8 ,

wherein a microlens array is provided over the protective layer.

10 . The display device according to claim 1 ,

wherein the display device comprises a first transistor and a second transistor,

wherein one of a source and a drain of the first transistor is electrically connected to the first lower electrode,

wherein one of a source and a drain of the second transistor is electrically connected to the second lower electrode, and

wherein the first transistor and the second transistor each comprise silicon in a channel formation region.

11 . The display device according to claim 1 ,

wherein the display device comprises a first transistor and a second transistor,

wherein one of a source and a drain of the first transistor is electrically connected to the first lower electrode,

wherein one of a source and a drain of the second transistor is electrically connected to the second lower electrode, and

wherein the first transistor and the second transistor each comprise a metal oxide in a channel formation region.

12 . An electronic device comprising the display device according to claim 1 and a lens.

13 . The display device according to claim 1 ,

wherein the first upper electrode overlaps with the gap, and

wherein the second upper electrode overlaps with the gap.

14 . The display device according to claim 1 ,

wherein the gap is a region consisting of the gas.

15 . A method for manufacturing a display device, comprising;

depositing a layer to be a first lower electrode and a second lower electrode, a layer to be a first light-emitting layer and a second light-emitting layer, and a layer to be a first upper electrode and a second upper electrode in this order and processing the layers by first etching to form the first and second upper electrodes, the first and second light-emitting layers, and the first and second lower electrodes; and

processing the first light-emitting layer and the second light-emitting layer by second etching so that the first upper electrode comprises a region projecting from a side surface of the first light-emitting layer and the second upper electrode comprises a region projecting from a side surface of the second light-emitting layer.

16 . The method for manufacturing a display device according to claim 15 ,

wherein the second etching comprises higher isotropy than the first etching.

17 . The method for manufacturing a display device according to claim 15 ,

wherein after the second etching is performed, a protective layer is formed such that a gap is provided between the first upper electrode and first light-emitting layer and the second upper electrode and second light-emitting layer.

18 . The method for manufacturing a display device according to claim 17 ,

wherein a microlens array is formed over the protective layer.

19 . A display device comprising a first light-emitting element; a second light-emitting element; and a gap,

wherein the first light-emitting element comprises a first lower electrode, a first light-emitting layer over the first lower electrode, and a first upper electrode over the first light-emitting layer,

wherein the second light-emitting element comprises a second lower electrode, a second light-emitting layer over the second lower electrode, and a second upper electrode over the second light-emitting layer,

wherein the first light-emitting element is adjacent to the second light-emitting element,

wherein the gap is a region containing a gas,

wherein the gap is provided between the first upper electrode and first light-emitting layer and the second upper electrode and second light-emitting layer,

wherein the first lower electrode is in contact with a first side surface of the gap,

wherein the second lower electrode is in contact with a second side surface of the gap,

wherein the first light-emitting layer is in contact with the first side surface of the gap,

wherein the second light-emitting layer is in contact with the second side surface of the gap,

wherein the first upper electrode comprises a region projecting from a side surface of the first light-emitting layer,

wherein the second upper electrode comprises a region projecting from a side surface of the second light-emitting layer,

wherein a distance between a side surface of the first upper electrode and a side surface of the second upper electrode is shorter than or equal to 100 nm,

wherein a protective layer is over the first upper electrode and the second upper electrode,

wherein the protective layer comprises a region in contact with a top surface of the gap, and

wherein a microlens array is over the protective layer.

20 . The display device according to claim 19 ,

wherein the display device comprises a first transistor and a second transistor,

wherein one of a source and a drain of the first transistor is electrically connected to the first lower electrode,

wherein one of a source and a drain of the second transistor is electrically connected to the second lower electrode, and

wherein the first transistor and the second transistor each comprise silicon in a channel formation region.

21 . The display device according to claim 19 ,

wherein the first upper electrode overlaps with the gap, and

wherein the second upper electrode overlaps with the gap.

22 . The display device according to claim 19 ,

wherein the gap is a region consisting of the gas.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (86)