NAND flash memory with boosting
A floating gate memory array includes row control circuits that provide a programming voltage to a selected word line and provide a stair-like pattern of boosting voltages to unselected word lines. Boosting voltages descend with increased distance from the selected word line. Boosting voltages are increased in small increments up to their final values.
1. A memory system comprising:
a memory array having a plurality of strings of floating gate memory cells; and
row control circuits that supply voltages to word lines overlying the plurality of strings of floating gate memory cells, the row control circuits supply a program voltage to a selected word line of the word lines while supplying a first boosting voltage to a first unselected word line of the word lines and a second boosting voltage to a second unselected word line of the word lines, the first unselected word line is immediately adjacent to the selected word line and the second unselected word line is immediately adjacent to the first unselected word line, the first boosting voltage is greater than the second boosting voltage.
2. The memory system of claim 1 further comprising column control circuits that supply program inhibit voltages to ones of the plurality of strings of the NAND memory array that are not to be programmed.
3. The memory system of claim 1 wherein a first of the row control circuits supplies an isolating voltage to a third unselected word line.
4. The memory system of claim 1 wherein the memory system is embodied in a removable memory card.
5. The memory system of claim 1 wherein the memory array is a NAND flash memory array.
6. The memory system of claim 1 , wherein the row control circuits supplies a third boosting voltage to a third unselected word line immediately adjacent to the second unselected word line while supplying the program voltage, the first boosting voltage, and the second boosting voltage, the third boosting voltage is less than the second boosting voltage.
7. The memory system of claim 1 , wherein the first boosting voltage, the second boosting voltage and the third boosting voltage have a stair-like voltage profile with voltage descending from the first unselected word line to the third unselected word line in successive increments.
8. The memory system of claim 7 , wherein the stair-like voltage profile is only applied to word lines on one side of the selected word line.
9. The memory system of claim 7 , wherein the stair-like voltage profile is applied to word lines on both sides of the selected word line.
10. A memory system comprising:
a memory array having a plurality of strings of floating gate memory cells; and
a plurality of word lines extending over the plurality of strings of floating gate memory cells, a selected word line of the word lines has a programming voltage while a first unselected word line of the word lines has a first boosting voltage and while a second unselected word line of the word lines has a second boosting voltage, the first unselected word line lies between the selected word line and the second unselected word line, no word line between the selected word line and the second unselected word line receives an isolating voltage, the first boosting voltage is greater than the second boosting voltage.
11. The memory system of claim 10 , wherein a third unselected word line has a third boosting voltage while the selected word line has the program voltage, while the first unselected word line has the first boosting voltage, and while the second unselected word line has a second boosting voltage, the second unselected word line lies between the first unselected word line and the third unselected word line, the third boosting voltage is less than the second boosting voltage.
12. A memory system comprising:
a memory array having a plurality of strings of floating gate memory cells; and
row control circuits that provide a first boosting voltage to a first unselected word line, a second unselected word line and a selected word line at a first time; the row control circuits subsequently supply a second boosting voltage to the second unselected word line and the selected word line at a second time while maintaining the first unselected word line at the first boosting voltage; the row control circuits subsequently supply a programming voltage to the selected word line at a third time while maintaining the first unselected word line at the first boosting voltage and maintaining the second unselected word line at the second boosting voltage, the second boosting voltage exceeds the first boosting voltage.
13. The memory system of claim 12 , wherein the row control circuits supplies a third boosting voltage to a third unselected word line immediately adjacent to the second unselected word line while supplying the program voltage, the first boosting voltage, and the second boosting voltage, the third boosting voltage is less than the second boosting voltage.
14. The memory system of claim 12 , wherein the first boosting voltage, the second boosting voltage and the third boosting voltage have a stair-like voltage profile with voltage descending from the first unselected word line to the third unselected word line in successive increments.
15. The memory system of claim 14 , wherein the stair-like voltage profile is only applied to word lines on one side of the selected word line.
16. The memory system of claim 14 , wherein the stair-like voltage profile is applied to word lines on both sides of the selected word line.
17. The memory system of claim 12 wherein the memory system is embodied in a removable memory card.
18. The memory system of claim 12 wherein the memory array is a NAND flash memory array.