Method and apparatus for deploying a liquid metal thermal interface for chip cooling

1. A method for adapting an interface surface for bonding to a liquid metal, the interface surface comprising a surface of an integrated circuit chip or a surface of a heat sink, said method comprising:

applying an adhesive to said interface surface; and

bonding a metal film to said adhesive, where said metal film is for bonding said liquid metal to said interface surface, wherein said bonding comprises:

pressing said metal film to said adhesive, said metal film comprising:

a barrier layer, said barrier layer comprising a substantially oxide-free foil that has a low solubility in said liquid metal; and

a wetting layer, said wetting layer comprising at least one material that is at least partially dissolvable in said liquid metal and that coats at least a portion of said barrier layer; and

curing said adhesive until said metal film is bonded to said adhesive.

2. The method of claim 1 , wherein said barrier layer is formed of at least one of: titanium, tantalum, tungsten, chromium, molybdenum, silicon, silicon carbide, silicon nitride, silicon dioxide, titanium nitride, tantalum nitride or nickel.

3. The method of claim 1 , wherein said wetting layer is formed of at least one noble metal.

4. The method of claim 1 , wherein said wetting layer is formed of at least one of: platinum or gold.

5. The method of claim 1 , wherein said metal film has a thickness of at least approximately 1000 Angstroms.

6. A method for adapting an interface surface for bonding to a liquid metal, the interface surface comprising a surface of an integrated circuit chip or a surface of a heat sink, said method comprising:

applying an adhesive to said interface surface; and

bonding a metal film to said adhesive, where said metal film is for bonding said liquid metal to said interface surface, wherein said bonding comprises:

pressing said metal film to said adhesive, said metal film comprising:

a polymer backing film; and

a barrier layer evaporated onto said polymer backing film, said barrier layer comprising at least one material that has a low solubility in said liquid; and

curing said adhesive until said metal film is bonded to said adhesive.

7. The method of claim 6 , wherein said metal film further comprises:

a wetting layer evaporated onto said polymer backing film beneath said barrier layer, said wetting layer comprising at least one material that is at least partially dissolvable in said liquid metal.

8. The method of claim 6 , wherein said bonding further comprises:

peeling said polymer backing film from said metal film after curing said adhesive.

9. The method of claim 6 , wherein said polymer backing film is formed of a polyester film.

10. The method of claim 6 , wherein said metal film has a thickness of approximately one to twenty microns.

11. The method of claim 6 , wherein said polymer backing film is formed of at least one of: polyethylene terephthalate or polytetrafluoroethylene.

12. The method of claim 1 , wherein said adhesive is at least one of: a low viscosity acrylate, an epoxy, a low-melt solder or an indium-based solder.

13. The method of claim 1 , further comprising:

applying an adhesion promoter to said interface surface prior to applying said adhesive.

14. The method of claim 1 , wherein said adhesive is cured using at least one of: heat and light.

15. The method of claim 14 , wherein said adhesive is cured at a temperature of at least approximately 250 degrees Celsius.

16. The method of claim 6 , wherein said adhesive is at least one of: a low viscosity acrylate, an epoxy, a low-melt solder or an indium-based solder.

17. The method of claim 6 , further comprising:

applying an adhesion promoter to said interface surface prior to applying said adhesive.

18. The method of claim 6 , wherein said adhesive is cured using at least one of: heat and light.

19. The method of claim 18 , wherein said adhesive is cured at a temperature of at least approximately 250 degrees Celsius.