Method and structure for forming fin resistors
A fin resistor and method of fabrication are disclosed. The fin resistor comprises a plurality of fins arranged in a linear pattern with an alternating pattern of epitaxial regions. An anneal diffuses dopants from the epitaxial regions into the fins. Contacts are connected to endpoint epitaxial regions to allow the resistor to be connected to more complex integrated circuits.
1. A fin resistor, comprising:
a plurality of epitaxial semiconductor regions disposed on a substrate in series with a plurality of fins, arranged in an alternating pattern of epitaxial semiconductor regions and fins;
wherein a first epitaxial semiconductor region from the plurality of epitaxial semiconductor regions forms a first endpoint and a second epitaxial semiconductor region from the plurality of epitaxial semiconductor regions forms a second endpoint for the alternating pattern;
wherein each of the plurality of epitaxial semiconductor regions has a first resistance and each of the plurality of fins has a second resistance, wherein the first resistance is different than the second resistance;
wherein the plurality of epitaxial semiconductor regions have a dopant concentration ranging from about 1E20 atoms per cubic centimeter to about 2E21 atoms per cubic centimeter; and wherein the plurality of fins have a non-uniform dopant concentration profile, wherein a dopant concentration in an outer portion of each fin is higher than a dopant concentration in an interior portion of each fin.
2. The fin resistor of claim 1 , wherein the substrate is an insulator layer, and wherein the substrate is disposed on a semiconductor layer.
3. The fin resistor of claim 1 , further comprising a FinFET disposed on the substrate.
4. The fin resistor of claim 1 , further comprising a gate material region disposed along the alternating pattern.
5. The fin resistor of claim 1 , wherein the plurality of epitaxial semiconductor regions comprise silicon germanium.
6. The fin resistor of claim 1 , wherein the plurality of epitaxial semiconductor regions and plurality of fins are doped with N-type dopants.
7. The fin resistor of claim 1 , wherein the plurality of epitaxial semiconductor regions and plurality of fins are doped with P-type dopants.
8. The fin resistor of claim 1 , further comprising a first contact formed on the first endpoint and a second contact formed on the second endpoint.