IP Library Granted Patent US 8,916,944
Granted Patent B2
US 8,916,944 · App. 13/583,392 · Granted Dec 23, 2014

Stress-sensitive micro-electromechanical device and use thereof

Inventors: Bernd Burchard (Dortmund, DE); Michael Doelle (Milpitas, CA); Zhou Ningning (Milpitas, CA)
Assignees: ELMOS Semiconductor AG; Silicon Microstructures, Inc.
B81B3/0072B81B2201/0257B81B2201/0264
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Quick Facts
Patent No.
US 8,916,944
App. No.
13/583,392
Granted
Dec 23, 2014
Kind
B2
Abstract

The micro-electromechanical device has a substrate. Integrated into the substrate is a micromechanical component that has a bending element which can be bent reversibly and which has a first end connected to the substrate and extends from the first end over a free space. The bending element has at least one web having two side edges, the course of which is defined by depressions introduced into the bending element and adjacent to the side edges. In order to form a homogenization region located within the web, in which mechanical stresses occurring during bending of the bending element are substantially equal, the mutual spacing of the side edges of the web decreases, as viewed from the first end of the bending element. The device further comprises at least one microelectronic component that is sensitive to mechanical stresses and embedded in the web in the homogenization region of the latter.

Claims (15)

1. A micro-electromechanical device comprising:

a substrate suitable for the production of microelectronic components, in particular a semiconductor substrate; and

a micromechanical component integrated into the substrate, the micromechanical component comprising a bending element which can be bent reversibly and which has a first end connected to the substrate and extends from the first end over a free space;

the bending element comprising at least one web having two side edges, the course of the side edges being defined by depressions introduced into the bending element and adjacent to the side edges, the depressions comprising trenches including side walls and a bottom wall,

wherein, to form a homogenization region located within the web, in which mechanical stresses occurring during bending of the bending element are substantially equal, the mutual spacing of the side edges of the web decreases, as viewed from the first end of the bending element, and

at least one microelectronic component sensitive to mechanical stresses, the microelectronic component being integrated in the web within the homogenization region of the web.

2. The micro-electromechanical device according to claim 1 , wherein the homogenization region is enlarged in the width and length extension of the web.

3. The micro-electromechanical device according to claim 1 , wherein the microelectronic component is arranged completely within the homogenization region of the web.

4. The micro-electromechanical device according to claim 1 wherein the homogenization region in the width and/or length extension of the web is by a presettable minimum factor larger than the extension of the microelectronic component in at least one of the respective width or length direction of the web.

5. The micro-electromechanical device according to claim 4 , wherein the factor is at least six sigma, wherein sigma is the positioning accuracy, defined by the process for production of microelectronic components, of the microelectronic component arranged in the homogenization region relative to the position of this homogenization region.

6. The micro-electromechanical device according to claim 1 , wherein the bending element is a membrane, a plate, a beam or a disk.

7. The micro-electromechanical device according to claim 1 , wherein the bending element is formed by etching the substrate.

8. The micro-electromechanical device according to claim 1 wherein the decrease of the width of the web is continuous, quasi-continuous, or continuous in a portion-wise manner or is stepped, and wherein a function describing the development of a lateral edge of the web is linear, quadratic, exponential, steady, monotonic, differentiable, steady in a portion-wise manner, monotonic in a portion-wise manner, or differentiable in a portion-wise manner.

9. The micro-electromechanical device according to claim 1 , wherein the development of both lateral edges of the web relative to a central line extending in the longitudinal direction of the web is symmetric.

10. The micro-electromechanical device according to claim 1 , wherein each microelectronic component is integrated in the web within the homogenization region of the web.

Assignments (5)
MERGER Recorded Jun 17, 2022
From: SILICON MICROSTRUCTURES, INC.
To: MEASUREMENT SPECIALTIES, INC.
Reel/Frame 060237/0556 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 20, 2021
From: ELMOS SEMICONDUCTOR SE
To: SILICON MICROSTRUCTURES, INC.
Reel/Frame 056296/0706 →
CHANGE OF NAME Recorded May 20, 2021
From: ELMOS SEMICONDUCTOR AG
To: ELMOS SEMICONDUCTOR SE
Reel/Frame 056312/0010 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 11, 2013
From: BURCHARD, BERND
To: ELMOS SEMICONDUCTOR AG
Reel/Frame 030200/0132 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 11, 2013
From: DOELLE, MICHAEL; NINGNING, ZHOU
To: SILICON MICROSTRUCTURES, INC.
Reel/Frame 030200/0274 →
Priority Claims (1)
EP 10157917 · Mar 26, 2010 · regional
Continuity (1)
Related Publication 20130193535A1 · Aug 1, 2013