Replacement gate structures and methods of manufacturing

1. A method, comprising:

forming a continuous replacement gate structure within a trench formed in dielectric material;

segmenting the continuous replacement gate structure into separate replacement gate structures; and

forming insulator material between the separate replacement gate structures,

wherein the forming the continuous replacement gate structure comprises:

forming a continuous dummy gate structure;

forming the dielectric material about the continuous dummy gate structure;

removing the continuous dummy gate structure to form the trench; and

depositing metal material within the trench.

2. The method of claim 1 , wherein the forming the continuous replacement gate structure further comprises forming a gate dielectric in the trench, prior to the depositing.

3. The method of claim 2 , wherein the gate dielectric is a high-k dielectric material.

4. The method of claim 1 , wherein the forming the continuous dummy gate structure comprises blanket depositing a poly material over a substrate and patterning the poly material to form a continuous strip.

5. The method of claim 4 , wherein the substrate comprises shallow trench isolation structures and active silicon regions.

6. The method of claim 1 , wherein the insulator material is a deposited SiO 2 , SiC—N or SiN or a combination of SiO 2 , SiC—N or SiN.

7. The method of claim 1 , further comprising planarizing the insulator material.

8. The method of claim 1 , wherein the trench is formed by removing strips of dummy gate material, and a gate dielectric material is formed under the dummy gate material, prior to the removing of the strips.

9. A method, comprising:

forming a continuous replacement gate structure within a trench formed in dielectric material:

segmenting the continuous replacement gate structure into separate replacement gate structures; and

forming insulator material between the separate replacement gate structures,

wherein the insulator material is deposited as a liner, wherein the liner is deposited SiC—N, SiN or SiO 2 .

10. The method of claim 1 , further comprising forming a conductive liner within the trench, wherein the conductive liner is formed over a gate dielectric material, prior to the forming of the continuous replacement gate structure.

11. The method of claim 1 , wherein the separate replacement gate structures are formed with a space therebetween of about 30 nm or less.

12. A method, comprising:

forming a dummy gate material on a substrate having active regions and isolation regions;

patterning the dummy gate material to form a plurality of continuous dummy gate strips, spanning over the active regions and the isolation regions;

forming dielectric material about the continuous dummy gate strips;

forming a plurality of trenches in the dielectric material by removing the dummy gate strips;

forming continuous replacement gate structures within the plurality of trenches;

segmenting the continuous replacement gate structures to form a plurality of segmented replacement gates, with an end to end spacing between the plurality of segmented replacement gates; and

filling the end to end spacing with an insulator material.

13. The method of claim 12 , wherein the dielectric material is planarized.

14. The method of claim 12 , wherein the segmenting is provided by an etching process, after exposure steps for the plurality of segmented replacement gates.

15. The method of claim 12 , wherein the end to end spacing is about 30 nm or less.

16. The method of claim 12 , wherein the plurality of segmented replacement gates are formed by depositing one or more metal layers within the plurality of trenches.

17. The method of claim 16 , wherein the plurality of segmented replacement gates are formed by depositing a high-k dielectric material under the one or more metal layers.