Semiconductor device and method of forming conductive ink layer as interconnect structure between semiconductor packages
A semiconductor device has a semiconductor die with an encapsulant deposited over and around the semiconductor die. An opening is formed in a first surface of the encapsulant by etching or LDA. A plurality of bumps is optionally formed over the semiconductor die. A bump is recessed within the opening of the encapsulant. A conductive ink is formed over the first surface of the encapsulant, bump and sidewall of the opening. The conductive ink can be applied by a printing process. An interconnect structure is formed over a second surface of the encapsulant opposite the first surface of the encapsulant. The interconnect structure is electrically connected to the semiconductor die. A semiconductor package is disposed over the first surface of the encapsulant with a plurality of bumps electrically connected to the conductive ink layer. The semiconductor package may contain a memory device.
1. A method of making a semiconductor device, comprising:
providing a semiconductor die;
depositing an encapsulant over the semiconductor die;
forming an opening in a first surface of the encapsulant;
forming a conductive layer over a portion of the first surface of the encapsulant;
forming a bump in the opening of the encapsulant;
conformally printing a conductive ink layer over the bump and a sidewall of the opening and extending to the conductive layer; and
forming an interconnect structure over a second surface of the encapsulant opposite the first surface of the encapsulant.
2. The method of claim 1 , further including disposing a semiconductor package over the first surface of the encapsulant.
3. The method of claim 2 , further including forming a plurality of bumps over the semiconductor package to electrically connect the semiconductor package to the conductive ink layer.
4. The method of claim 2 , wherein the semiconductor package includes a memory device.
5. The method of claim 1 , further including forming a plurality of bumps over the semiconductor die.
6. A method of making a semiconductor device, comprising:
providing a semiconductor die;
depositing an encapsulant over the semiconductor die;
forming an opening in a first surface of the encapsulant;
forming a first interconnect structure in the opening of the encapsulant; and
printing a conductive ink layer including a nonlinear surface over the first interconnect structure and within the opening, the conductive ink layer terminating at the first surface of the encapsulant.
7. The method of claim 6 , further including forming a second interconnect structure over a second surface of the encapsulant opposite the first surface of the encapsulant.
8. The method of claim 6 , wherein the first interconnect structure includes a bump.
9. The method of claim 6 , further including disposing a semiconductor package over the first surface of the encapsulant.
10. The method of claim 9 , further including forming a bump over the semiconductor package to electrically connect the semiconductor package to the conductive ink layer.
11. The method of claim 6 , further including forming a plurality of bumps over the semiconductor die.
12. The method of claim 6 , further including forming a conductive trace over the first surface of the encapsulant between the semiconductor die and the opening.
13. A method of making a semiconductor device, comprising:
providing a first semiconductor package including an opening;
forming a recessed interconnect structure within the opening; and
printing a conductive ink over the recessed interconnect structure and a first portion of a sidewall of the opening while leaving a second portion of the sidewall of the opening devoid of the conductive ink and the recessed interconnect structure.
14. The method of claim 13 , wherein providing the first semiconductor package includes:
providing a semiconductor die;
depositing an encapsulant over the semiconductor die; and
forming the opening in the encapsulant.
15. The method of claim 14 , further including forming a plurality of bumps over the semiconductor die.
16. The method of claim 14 , further including forming a second interconnect structure over the encapsulant and electrically connected to the recessed interconnect structure.
17. The method of claim 13 , wherein the recessed interconnect structure includes a bump.
18. The method of claim 13 , further including disposing a second semiconductor package over the first semiconductor package.
19. The method of claim 18 , further including forming a bump over the second semiconductor package to electrically connect the second semiconductor package to the conductive ink.