Copper alloy bonding wire for semiconductor
The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities.
1. A copper alloy bonding wire for semiconductor manufactured by wire drawing of a copper alloy, the copper alloy consisting of 0.13 to 1.15% by mass of Pd, and a remainder consisting of copper,
wherein a copper oxide formed on a surface of the copper alloy bonding wire has an average film thickness of 0.0005 to 0.02 μm.
2. The copper alloy bonding wire for semiconductor according to claim 1 , comprising:
crystal grains not smaller than 2 μm and not larger than a wire diameter multiplied by 1.5 on average, said crystal grains being observed on a wire cross-section surface parallel to a wire longitudinal direction.
3. A copper alloy bonding wire for semiconductor manufactured by wire drawing of a copper alloy, the copper alloy consisting of 0.13 to 1.15% by mass of Pd, at least one of Ag and Au in a total amount of 0.0005 to 0.07% by mass, and a remainder consisting of copper,
wherein a copper oxide formed on a surface of the copper alloy bonding wire has an average film thickness of 0.0005 to 0.02 μm.
4. A copper alloy bonding wire for semiconductor manufactured by wire drawing of a copper alloy, the copper alloy consisting of more than 0.5% and not more than 1.15% by mass of Pd, at least one of Ti: 0.0005 to 0.01% by mass and B: 0.0005 to 0.007% by mass, and a remainder consisting of copper,
wherein a copper oxide formed on a surface of the copper alloy bonding wire has an average film thickness of 0.0005 to 0.02 μm.
5. A copper alloy bonding wire for semiconductor manufactured by wire drawing of a copper alloy, the copper alloy consisting of more than 0.5% and not more than 1.15% by mass of Pd, at least one of Ag and Au in a total amount of 0.0005 to 0.07% by mass, at least one of Ti: 0.0005 to 0.01% by mass and B: 0.0005 to 0.007% by mass, and a remainder consisting essentially of copper,
wherein a copper oxide formed on a surface of the copper alloy bonding wire has an average film thickness of 0.0005 to 0.02 μm.
6. The copper alloy bonding wire for semiconductor according to claim 3 , comprising crystal grains not smaller than 2 μm and not larger than a wire diameter multiplied by 1.5 on average, said crystal grains being observed on a wire cross-section surface parallel to a wire longitudinal direction.
7. The copper alloy bonding wire for semiconductor according to claim 4 , comprising: crystal grains not smaller than 2 μm and not larger than a wire diameter multiplied by 1.5 on average, said crystal grains being observed on a wire cross-section surface parallel to a wire longitudinal direction.
8. The copper alloy bonding wire for semiconductor according to claim 5 , comprising: crystal grains not smaller than 2 μm and not larger than a wire diameter multiplied by 1.5 on average, said crystal grains being observed on a wire cross-section surface parallel to a wire longitudinal direction.