IP Library › Granted Patent US 6,534,363
Granted Patent Utility
US 6,534,363 · Confirmation No. 8713

HIGH VOLTAGE OXIDATION METHOD FOR HIGHLY RELIABLE FLASH MEMORY DEVICES

Inventor: Hyeon-Seag Kim
Patented Case View Patent ↗ View Publication ↗
⬇ PDF
 Code Description Pages PDF
2001-05-04 DRW Drawings-only black and white line drawings 4 View
2001-03-12 TRNA Transmittal of New Application 2 View
2001-03-12 SPEC Specification 14 View
2001-03-12 CLM Claims 5 View
2001-03-12 ABST Abstract 1 View
2001-03-12 DRW Drawings-only black and white line drawings 4 View
2001-03-12 OATH Oath or Declaration filed 3 View
2001-03-12 LET. Miscellaneous Incoming Letter 1 View
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Quick Facts
Patent No.
US 6,534,363
App. No.
09/803,400
Filed
2001-03-12
Granted
2003-03-18
Pub. No.
US20020127799A1
Art Unit
2825
PTA
-57 days