Method for patterning submicron pillars
View Patent ↗The present invention provides for a method to pattern and etch very small dimension pillars, for example in a memory array. When dimensions of pillars become very small, the photoresist pillars used to pattern them may not have sufficient mechanical strength to survive the photoresist exposure and development process. Using methods according to the present invention, these photoresist pillars are printed and developed larger than their intended final dimension, such that they have increased mechanical strength, then are shrunk to the desired dimension during a preliminary etch performed before the etch of underlying material begins.
1. A method for forming a reduced CD pillar, the method comprising:
forming a conductor rail above a substrate, the conductor rail having a rail width;
forming a layer of etchable material above the conductor rail;
forming a layer of photoresist over the etchable material;
patterning and developing the photoresist layer to form a photoresist pillar having no cross-section width in any direction which is more than three times the cross-section width in any other direction, the photoresist pillar having a first width no larger than about 0.3 micron and having a first aspect ratio, wherein the photoresist pillar is adapted to survive mechanical stresses encountered during a wash-and-spin process, and wherein the first width is larger than the rail width;
spraying the photoresist layer with deionized water to stop the developing;
spinning the substrate to remove the deionized water;
shrinking the photoresist pillar to a second width smaller than the first width to form a shrunken photoresist pillar while controlling isotropy during the shrinking step by using an O 2 based etch and adjusting the O 2 percentage used to control isotropy, wherein the shrunken photoresist pillar has a second aspect ratio greater than the first aspect ratio, and wherein the second width is substantially equal to the rail width; and
etching the etchable material to form an etched pillar, wherein the etched pillar is substantially aligned with the conductor rail and has a pillar width substantially equal to the rail width.
2. The method of claim 1 wherein the second width is less than about 95 percent of the first width and the shrinking step comprises etching the photoresist pillar with any etch and controlling isotropy during the etch.
3. The method of claim 2 wherein a degree of isotropy of the etching of the photoresist pillar is controlled to obtain a selected amount of reduction in the first width.
4. The method of claim 3 wherein shrinking step is performed using a combination of HBr and O 2 as an etchant and wherein the isotropy is controlled by adjusting the O 2 percentage used to etch the photoresist pillar.
5. The method of claim 4 wherein the second width is at least about 0.02 micron less than the first width.
6. The method of claim 1 wherein the etched pillar is substantially cylindrical.
7. The method of claim 1 wherein the etchable material comprises silicon or germanium.
8. The method of claim 1 further comprising forming a layer of bottom antireflective coating between the layer of etchable material and the layer of photoresist, and removing any of the coating not covered by the photoresist pillar during the shrinking step.
9. The method of claim 8 further comprising controlling isotropy to remove the coating not covered by the photoresist pillar while obtaining a selected amount of reduction in the first width of the photoresist pillar.
10. The method of claim 1 wherein the layer of etchable material is formed above a monocrystalline silicon substrate.
11. A method for etching a plurality of etched reduced CD pillars, the method comprising:
forming a plurality of substantially parallel conductor rails above a substrate, each of the plurality of substantially parallel conductor rails having a rail width and being separated from an adjacent rail by a rail pitch;
forming a layer of etchable material above the plurality of conductor rails;
forming a layer of photoresist over the etchable material;
patterning and developing the photoresist layer to form a plurality of photoresist pillars, each photoresist pillar having a largest surface dimension equal to a first width, the first width no larger than about 0.3 micron and having a first aspect ratio, wherein each photoresist pillar is adapted to survive mechanical stresses encountered during a wash-and-spin process, and wherein the first width is larger than the rail width;
spraying the photoresist layer with deionized water to stop the developing;
spinning the substrate to remove the deionized water;
before etching the etchable material, shrinking the photoresist pillars to form shrunken photoresist pillars while varying isotropy during the shrinking step using an O 2 based etch and adjusting the O 2 percentage used to control isotropy until the largest surface dimension is a second width less than the first width, wherein each shrunken photoresist pillar has a second aspect ratio greater than the first aspect ratio, and wherein the second width is substantially equal to the rail width; and
etching the etchable material to form the plurality of etched reduced CD pillars in a grid pattern, wherein each etched pillar is substantially aligned with one of the plurality of conductor rails, has a pillar width substantially equal to the rail width, and has a first pillar pitch in a direction perpendicular to the plurality of conductor rails substantially equal to the rail pitch.
12. The method of claim 11 wherein the shrinking step comprises etching the photoresist pillars and varying etch parameters during the etch to adjust isotropy.
13. The method of claim 12 wherein the isotropy of the etch is varied during the etch to obtain a selected amount of reduction in the first width.
14. The method of claim 13 wherein the shrinking step uses an HBr and O 2 etch and wherein isotropy is controlled by adjusting the O 2 percentage used in the etch of the photoresist pillars.
15. The method of claim 14 wherein the second width is at least about 0.02 micron less than the first width.
16. The method of claim 11 further comprising forming a layer of bottom antireflective coating between the layer of etchable material and the layer of photoresist, and etching the coating during the shrinking step.
17. The method of claim 16 further comprising adjusting isotropy to remove the coating not covered by the photoresist pillars while obtaining a selected amount of reduction in the first width of the photoresist pillars.
18. The method of claim 11 wherein the etched pillars are substantially cylindrical.
19. The method of claim 11 wherein the etched pillars are evenly spaced in the grid pattern, such that each pillar has a second pillar pitch in a direction parallel to the plurality of conductor rails substantially equal to the rail pitch.
20. The method of claim 19 wherein the etched pillars have first and second pitches of about 0.6 micron or less.
21. The method of claim 20 wherein the etched pillars have first and second pitches of about 0.36 micron or less.