Semiconductor package having increased resistance to electrostatic discharge
Embodiments of the invention include a semiconductor integrated circuit package that includes a substrate having an integrated circuit die attached thereto. The package includes a ESD shield attached to the substrate. The ESD shield configured to increase the ESD hardness of the package. The ESD shield can further serve to stiffen the package to prevent warping and operate as a heat spreader.
1. A semiconductor integrated circuit (IC) package which comprises:
a substrate having a front side and a back side;
a die attached to the front side of the substrate;
a plurality of electrical connections that electrically connect the die with the substrate; and
discharge shield configured to protect the die from electrostatic discharge events wherein the discharge shield is configured to dissipate greater than about 20 Watts.
2. The IC package of claim 1 wherein the discharge shield is configured to reduce capacitance between the die and an electrostatic charge external to the package.
3. The IC package of claim 1 wherein the discharge shield is configured to stiffen the package to prevent warping of the package.
4. The IC package of claim 1 wherein the package comprises a ball grid array package.
5. The IC package of claim 1 wherein the package comprises a leaded package.
6. The IC package of claim 1 wherein the package comprises a chip-scale package.
7. The IC package of claim 1 wherein the discharge shield comprises a frame formed around the die and a cap on top of the frame and covering the die.
8. The IC package of claim 7 wherein the frame is affixed to the substrate using adhesive and the cap is affixed to the top of the frame using adhesive.
9. The IC package of claim 7 wherein the package includes thermal grease interposed between the die and the cap.
10. The IC package of claim 7 wherein the frame comprises a layer at least about 25 microns (μm) thick.
11. A semiconductor integrated circuit (IC) package which comprises:
a substrate having a front side and a back side;
a die attached to the front side of the substrate;
a plurality of electrical connections that electrically connect the die with the substrate; and
a discharge shield configured to protect the die from electrostatic discharge events wherein the discharge shield is formed of an AlSiC material and wherein the discharge shield is configured to protect the die from an electrostatic potential of at least 500 volts.
12. The IC package of claim 11 wherein the discharge shield is about 1.2 mm (millimeters) thick and includes a clearance above the die of about 75 μm (micrometers).
13. The IC package of claim 11 wherein the plurality of electrical connections includes a plurality of solder balls arranged to electrically connect the die with electrical connectors on the front side of the substrate.
14. The IC package of claim 13 wherein underfill material is used to encapsulate the solder balls and portions of the package between the die and substrate.
15. The IC package of claim 14 wherein a side of the die opposite to the solder balls includes thermal grease to enhance a heat conduction between the die and the discharge shield enabling the shield to operate more efficiently as a heat spreader for the package.
16. The IC package of claim 11 wherein the plurality of electrical connections includes a plurality of wire bonds arranged to electrically connect the die with electrical connectors on the front side of the substrate.
17. The IC package of claim 11 wherein the discharge shield is configured to reduce capacitance between the die and an electrostatic charge external to the package.
18. The IC package of claim 11 wherein the discharge shield is configured to stiffen the package to prevent warping of the package.
19. The IC package of claim 11 wherein the discharge shield is configured to dissipate greater than about 20 Watts.
20. The IC package of claim 11 wherein the package comprises a ball grid array package.
21. The IC package of claim 11 wherein the package comprises a leaded package.
22. The IC package of claim 11 wherein the package comprises a chip-scale package.
23. A semiconductor integrated circuit (IC) package which comprises:
a substrate having a front side and a back side;
a die attached to the front side of the substrate;
a plurality of electrical connections that electrically connect the die with the substrate; and
a discharge shield configured to protect the die from electrostatic discharge events wherein the discharge shield comprises a material that having a electrical resistivity of greater than about 30 μΩ·cm (10 −6 ohm·centimeter) and a thermal conductivity of greater than about 150 W/mK (Watts/meter·Kelvin).
24. A semiconductor integrated circuit (IC) package which comprises:
a substrate having a front side and a back side;
a die attached to the front side of the substrate;
a plurality of electrical connections that electrically connect the die with the substrate;
and a discharge shield configured to protect the die from electrostatic discharge events, the shield comprising a frame formed around the die and a cap on top of the frame that covers the die, the frame including a layer at least about 25 microns (μm) thick.
25. A semiconductor integrated circuit (IC) package which comprises:
a substrate having a front side and a back side;
a die attached to the front side of the substrate;
a plurality of electrical connections that electrically connect the die with the substrate; and
a discharge shield configured to protect the die from electrostatic discharge events wherein the discharge shield comprises one of a group consisting of: a material suitable for dissipating greater than about 20 Watts; an AlSiC material that is adapted to protect the die from an electrostatic potential of at least 500 volts; a material having an electrical resistivity of greater than about 30 μΩ·cm (10 −6 ohm·centimeter) and a thermal conductivity of greater than about 150 W/mK (Watts/meter·Kelvin); and a frame formed around the die and a cap on top of the frame that covers the die, the frame including a layer at least about 25 microns (μm) thick.