IP Library Granted Patent US 7,439,818
Granted Patent B2
US 7,439,818 · App. 11/467,475 · Granted Oct 21, 2008

Voltage-and temperature-compensated RC oscillator circuit

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Quick Facts
Patent No.
US 7,439,818
App. No.
11/467,475
Granted
Oct 21, 2008
Kind
B2
Abstract

An integrated temperature-compensated RC oscillator circuit includes an inverter having an input and an output. An RC network is coupled between the inverter and a pair of comparators. A first comparator has an inverting input coupled to a first reference voltage, a non-inverting input coupled to the RC network, and an output. A second comparator has an inverting input coupled to the RC network, a non-inverting input coupled to a second reference voltage, and an output. A set-reset flip-flop has a set input coupled to the output of the first comparator, a reset input coupled to the output of the second comparator, and an output coupled to the input of the inverter. Differential amplifiers in the comparators each have a diode-connected p-channel MOS transistor controlling a mirrored p-channel MOS transistor whose channel width is less than that of the diode-connected p-channel current mirror transistor.

Claims (22)

1. An integrated temperature-compensated RC oscillator circuit including:

an inverter having an input and an output;

a resistor having a first terminal and a second terminal, the first terminal coupled to the output of the inverter;

a capacitor coupled between the second terminal of the resistor and a fixed potential;

a voltage divider network having a first node and a second node connected between a power-supply potential and ground;

a first analog comparator having an inverting input coupled to the first node, a non-inverting input coupled to the second terminal of the resistor, and an output;

a second analog comparator having a non-inverting input coupled to the second terminal of the resistor, an inverting input coupled to the second node, and an output;

a set-reset flip-flop having a set input coupled to the output of the first analog comparator, a reset input coupled to the output of the second analog comparator, and an output coupled to the input of the inverter;

the first and second analog comparators each comprising a differential amplifier each having a diode-connected current mirror MOS transistor in series with a non-inverting-input MOS transistor and a mirrored MOS transistor in series with an inverting-input transistor, the diode-connected current mirror MOS transistor having a width larger than the width of the mirrored MOS transistor, the differential amplifier further having a MOS bias transistor having a drain coupled to the sources of the inverting-input and non-inverting-input input transistors, a source coupled to ground, and a gate coupled to a bias-voltage supply.

2. The integrated temperature-compensated RC oscillator circuit of claim 1 , wherein the voltage divider network further comprises a first resistor, a second resistor and a third resistor coupled in series between the power-supply potential and ground.

3. The integrated temperature-compensated RC oscillator circuit of claim 2 , wherein:

the first resistor is connected between the power-supply potential and the first node;

the second resistor is connected between the first node and the second node; and

the third resistor is connected between the second node and ground.

4. The integrated temperature-compensated RC oscillator circuit of claim 1 , wherein the inverting-input and non-inverting-input input transistors of the first and second analog comparators have equal channel widths.

5. The integrated temperature-compensated RC oscillator circuit of claim 1 , wherein the bias-voltage supply is derived from a band-gap reference-voltage circuit.

6. The integrated temperature-compensated RC oscillator circuit of claim 1 , wherein the width of the diode-connected transistor in the first and second analog comparators is about twice the width of the mirrored MOS transistor.

7. The integrated temperature-compensated RC oscillator circuit of claim 1 , wherein the sources of the diode-connected current minor MOS transistor and the mirrored MOS transistor have a source bias of V T .

8. The integrated temperature-compensated RC oscillator circuit of claim 1 , wherein the sources of the current mirror MOS transistor and the mirrored MOS transistor are coupled to source potential through a diode-connected MOS transistor.

9. The integrated temperature-compensated RC oscillator circuit of claim 1 , wherein:

the current mirror MOS transistor and the mirrored MOS transistor in the first comparator and the inverting-input MOS transistor, the non-inverting-input transistor, and the bias transistor in the second comparator are of a first conductivity type; and

the current mirror MOS transistor and the mirrored MOS transistor in the second comparator and the inverting-input MOS transistor, the non-inverting-input transistor and the bias transistor in the first comparator are of a second conductivity type opposite the first conductivity type.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded May 29, 2018
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: MICROSEMI CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.), INC.; MICROSEMI FREQUENCY AND TIME CORPORATION; MICROSEMI COMMUNICATIONS, INC.; MICROSEMI SOC CORP.; MICROSEMI CORP. - POWER PRODUCTS GROUP; MICROSEMI CORP. - RF INTEGRATED SOLUTIONS
Reel/Frame 046251/0391 →
PATENT SECURITY AGREEMENT Recorded Feb 3, 2016
From: MICROSEMI CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.) INC. (F/K/A LEGERITY, INC., ZARLINK SEMICONDUCTOR (V.N.) INC., CENTELLAX, INC., AND ZARLINK SEMICONDUCTOR (U.S.) INC.); MICROSEMI FREQUENCY AND TIME CORPORATION (F/K/A SYMMETRICON, INC.); MICROSEMI COMMUNICATIONS, INC. (F/K/A VITESSE SEMICONDUCTOR CORPORATION); MICROSEMI SOC CORP. (F/K/A ACTEL CORPORATION); MICROSEMI CORP. - POWER PRODUCTS GROUP (F/K/A ADVANCED POWER TECHNOLOGY INC.); MICROSEMI CORP. - RF INTEGRATED SOLUTIONS (F/K/A AML COMMUNICATIONS, INC.)
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037691/0697 →
RELEASE OF SECURITY INTEREST Recorded Jan 19, 2016
From: BANK OF AMERICA, N.A.
To: MICROSEMI CORPORATION; MICROSEMI CORP.-ANALOG MIXED SIGNAL GROUP, A DELAWARE CORPORATION; MICROSEMI SOC CORP., A CALIFORNIA CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.) INC., A DELAWARE CORPORATION; MICROSEMI FREQUENCY AND TIME CORPORATION, A DELAWARE CORPORATION; MICROSEMI COMMUNICATIONS, INC. (F/K/A VITESSE SEMICONDUCTOR CORPORATION), A DELAWARE CORPORATION; MICROSEMI CORP.-MEMORY AND STORAGE SOLUTIONS (F/K/A WHITE ELECTRONIC DESIGNS CORPORATION), AN INDIANA CORPORATION
Reel/Frame 037558/0711 →
CHANGE OF NAME Recorded Dec 28, 2015
From: ACTEL CORPORATION
To: MICROSEMI SOC CORP.
Reel/Frame 037393/0572 →
NOTICE OF SUCCESSION OF AGENCY Recorded Apr 9, 2015
From: ROYAL BANK OF CANADA (AS SUCCESSOR TO MORGAN STANLEY & CO. LLC)
To: BANK OF AMERICA, N.A., AS SUCCESSOR AGENT
Reel/Frame 035657/0223 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2011
From: WHITE ELECTRONIC DESIGNS CORP.; ACTEL CORPORATION; MICROSEMI CORPORATION
To: MORGAN STANLEY & CO. INCORPORATED
Reel/Frame 025783/0613 →