IP Library Granted Patent US 7,321,237
Granted Patent B2
US 7,321,237 · App. 11/551,973 · Granted Jan 22, 2008

Non-volatile look-up table for an FPGA

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Quick Facts
Patent No.
US 7,321,237
App. No.
11/551,973
Granted
Jan 22, 2008
Kind
B2
Abstract

A non-volatile-memory-transistor based lookup table for an FPGA includes a n:1 multiplexer. A non-volatile memory transistor is coupled to each of the n inputs of the multiplexer. The multiplexer has x address inputs wherein 2 x =n as is known in the art. The output of the multiplexer is coupled to V CC through a pullup transistor. The gate of the pullup transistor is coupled to the output of an address transition detector circuit that has inputs coupled to the address inputs of the multiplexer. A sense amplifier is coupled to the output of the multiplexer.

Claims (35)

1. A non-volatile-memory-transistor based lookup table for an FPGA including:

a multiplexer having a plurality of address inputs, a plurality of data inputs, and an output;

a pair of series-connected non-volatile memory transistors coupled to each of the data inputs of the multiplexer; and

a sense amplifier is coupled to the output of the multiplexer.

2. The non-volatile-memory-transistor based lookup table of claim 1 wherein the multiplexer has x address inputs and 2 X data inputs.

3. The non-volatile-memory-transistor based lookup table of claim 1 wherein the multiplexer has four address inputs and sixteen data inputs.

4. The non-volatile-memory-transistor based lookup table of claim 1 wherein each non-volatile memory transistor is a floating gate transistor.

5. The non-volatile-memory-transistor based lookup table of claim 1 wherein each non-volatile memory transistor is a nano-crystal transistor.

6. The non-volatile-memory-transistor based lookup table of claim 1 wherein each non-volatile memory transistor is a SONOS transistor.

7. A non-volatile-memory-transistor based lookup table for an FPGA including:

a multiplexer having x address inputs, 2 X data inputs, and an output;

a plurality of data-input circuits, each coupled to one of the data inputs of the multiplexer and including:

a first n-channel MOS transistor having a drain coupled to a power supply potential, a source coupled to the data input of the multiplexer, and a gate,

a second n-channel MOS transistor having a drain coupled to the data input of the multiplexer, a source coupled to ground, and a gate,

a first non-volatile memory cell having an output coupled to the gate of the first n-channel MOS transistor; and

a second non-volatile memory cell having an output coupled to the gate of the second n-channel MOS transistor;

and

a sense amplifier is coupled to the output of the multiplexer.

8. The non-volatile-memory-transistor based lookup table of claim 7 wherein the multiplexer has four address inputs and sixteen data inputs.

9. The non-volatile-memory-transistor based lookup table of claim 7 wherein each non-volatile memory cell includes a floating gate transistor.

10. The non-volatile-memory-transistor based lookup table of claim 7 wherein each non-volatile memory cell includes a nano-crystal transistor.

11. The non-volatile-memory-transistor based lookup table of claim 7 wherein each non-volatile memory cell includes a SONOS transistor.

12. A non-volatile-memory-transistor based lookup table for an FPGA including:

a multiplexer having 3 address inputs, 8 data inputs, and an output;

a plurality of data-input circuits, each coupled to one of the data inputs of the multiplexer and including:

a first non-volatile memory cell having an output coupled to the gate of a first n-channel MOS transistor, the first n-channel MOS transistor having a source coupled to the data input of the multiplexer and a drain coupled to a power supply potential;

a second non-volatile memory cell having an output coupled to the gate of a second n-channel MOS transistor, the second n-channel MOS transistor having a source coupled to the data input of the multiplexer and a drain coupled to an input signal;

a third non-volatile memory cell having an output coupled to the gate of a third n-channel MOS transistor, the third n-channel MOS transistor having a source coupled to the data input of the multiplexer and a drain coupled to the complement of the input signal; and

a fourth non-volatile memory cell having an output coupled to the gate of a fourth n-channel MOS transistor, the fourth n-channel MOS transistor having a source coupled to the data input of the multiplexer and a drain coupled to ground;

and

a sense amplifier is coupled to the output of the multiplexer.

13. The non-volatile-memory-transistor based lookup table of claim 12 wherein the multiplexer has four address inputs and sixteen data inputs.

14. The non-volatile-memory-transistor based lookup table of claim 12 wherein each non-volatile memory transistor is a floating gate transistor.

15. The non-volatile-memory-transistor based lookup table of claim 12 wherein each non-volatile memory transistor is a nano-crystal transistor.

16. The non-volatile-memory-transistor based lookup table of claim 12 wherein each non-volatile memory transistor is a SONOS transistor.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded May 29, 2018
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: MICROSEMI CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.), INC.; MICROSEMI FREQUENCY AND TIME CORPORATION; MICROSEMI COMMUNICATIONS, INC.; MICROSEMI SOC CORP.; MICROSEMI CORP. - POWER PRODUCTS GROUP; MICROSEMI CORP. - RF INTEGRATED SOLUTIONS
Reel/Frame 046251/0391 →
PATENT SECURITY AGREEMENT Recorded Feb 3, 2016
From: MICROSEMI CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.) INC. (F/K/A LEGERITY, INC., ZARLINK SEMICONDUCTOR (V.N.) INC., CENTELLAX, INC., AND ZARLINK SEMICONDUCTOR (U.S.) INC.); MICROSEMI FREQUENCY AND TIME CORPORATION (F/K/A SYMMETRICON, INC.); MICROSEMI COMMUNICATIONS, INC. (F/K/A VITESSE SEMICONDUCTOR CORPORATION); MICROSEMI SOC CORP. (F/K/A ACTEL CORPORATION); MICROSEMI CORP. - POWER PRODUCTS GROUP (F/K/A ADVANCED POWER TECHNOLOGY INC.); MICROSEMI CORP. - RF INTEGRATED SOLUTIONS (F/K/A AML COMMUNICATIONS, INC.)
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037691/0697 →
RELEASE OF SECURITY INTEREST Recorded Jan 19, 2016
From: BANK OF AMERICA, N.A.
To: MICROSEMI CORPORATION; MICROSEMI CORP.-ANALOG MIXED SIGNAL GROUP, A DELAWARE CORPORATION; MICROSEMI SOC CORP., A CALIFORNIA CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.) INC., A DELAWARE CORPORATION; MICROSEMI FREQUENCY AND TIME CORPORATION, A DELAWARE CORPORATION; MICROSEMI COMMUNICATIONS, INC. (F/K/A VITESSE SEMICONDUCTOR CORPORATION), A DELAWARE CORPORATION; MICROSEMI CORP.-MEMORY AND STORAGE SOLUTIONS (F/K/A WHITE ELECTRONIC DESIGNS CORPORATION), AN INDIANA CORPORATION
Reel/Frame 037558/0711 →
CHANGE OF NAME Recorded Dec 28, 2015
From: ACTEL CORPORATION
To: MICROSEMI SOC CORP.
Reel/Frame 037393/0572 →
NOTICE OF SUCCESSION OF AGENCY Recorded Apr 9, 2015
From: ROYAL BANK OF CANADA (AS SUCCESSOR TO MORGAN STANLEY & CO. LLC)
To: BANK OF AMERICA, N.A., AS SUCCESSOR AGENT
Reel/Frame 035657/0223 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2011
From: WHITE ELECTRONIC DESIGNS CORP.; ACTEL CORPORATION; MICROSEMI CORPORATION
To: MORGAN STANLEY & CO. INCORPORATED
Reel/Frame 025783/0613 →