IP Library Granted Patent US 7,554,860
Granted Patent B1
US 7,554,860 · App. 11/859,073 · Granted Jun 30, 2009

Nonvolatile memory integrated circuit having assembly buffer and bit-line driver, and method of operation thereof

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Quick Facts
Patent No.
US 7,554,860
App. No.
11/859,073
Granted
Jun 30, 2009
Kind
B1
Abstract

An assembly buffer and bitline driver circuit has two inverters cross-coupled to form an assembly buffer. A high-voltage latch is formed from cross-coupled high-voltage inverters. A first low-voltage n-channel MOS transistors is coupled to the high-voltage latch to selectively ground the output of the first high-voltage inverter and a second low-voltage n-channel MOS transistors is coupled to the high-voltage latch to selectively ground the output of the other high-voltage inverter. The gate of the first low-voltage n-channel MOS transistor is coupled to one output of one of the inverters forming the assembly buffer latch and the gate of the second low-voltage n-channel MOS transistor is coupled to the output of the other one of the inverters forming the assembly buffer latch. A pre-load circuit is used to prevent data in an unselected circuit from being disturbed.

Claims (22)

1. An assembly buffer and bitline driver circuit including:

a data line;

a column line;

a bit line;

a Y-select line;

two low-voltage inverters cross-coupled to form an assembly buffer latch, the assembly buffer latch having a first output coupled to the column line and a second complementary output;

a first switch coupled between the data line and the column line, the first switch having a control element coupled to the Y-select line;

a second switch coupled between the column line and the bit line, the second switch having a control element coupled to a column select signal line;

two high-voltage inverters cross-coupled to form a bitline driver latch, the bitline driver latch having a first output coupled to the bit line and a second complementary output;

a first low-voltage n-channel MOS data-transfer transistor coupled between the output of the first high-voltage inverter and ground, a gate of the first low-voltage n-channel MOS transistor coupled to the complementary output of the assembly buffer latch; and

a second low-voltage n-channel MOS data-transfer transistor coupled between the output of the second high-voltage inverter and ground, a gate of the second low-voltage n-channel MOS transistor coupled to the output of the assembly buffer latch.

2. The assembly buffer and bitline driver circuit of claim 1 , wherein the first switch is a pass gate.

3. The assembly buffer and bitline driver circuit of claim 1 , wherein the first switch is an n-channel MOS column-select transistor having a gate coupled to the column select line.

4. The assembly buffer and bitline driver circuit of claim 1 , further including a pre-load circuit configured to prevent data in an unselected circuit from being disturbed.

5. The assembly buffer and bitline driver circuit of claim 4 , wherein the preload circuit includes:

a first n-channel MOS transistor having a drain coupled to the complemetary output of the assembly buffer latch, a source, and a gate coupled to a LDABF signal line;

a second n-channel MOS transistor having a drain coupled to the source of the first n-channel MOS transistor, a source coupled to ground, and a gate coupled to the column line; and

a third n-channel MOS transistor having a drain coupled to the output of the assembly buffer, a source coupled to the column line, and a gate coupled to a PRELDABF signal line.

6. The assembly buffer and bitline driver circuit of claim 1 , wherein the first output of the bitline driver latch is coupled to the bit line through an n-channel MOS write-high-voltage transistor having a gate coupled to a write-high-voltage signal line.

7. The assembly buffer and bitline driver circuit of claim 1 , further including:

a first n-channel MOS assembly-buffer-read transistor having a gate coupled to the complementary output of the assembly buffer latch, a source coupled to ground, and a drain; and

a second n-channel MOS assembly-buffer-read transistor having a gate coupled to a read-assembly-buffer signal line, a source coupled to the drain of the first n-channel MOS assembly-buffer-read transistor, and a drain coupled to the column line.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded May 29, 2018
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: MICROSEMI CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.), INC.; MICROSEMI FREQUENCY AND TIME CORPORATION; MICROSEMI COMMUNICATIONS, INC.; MICROSEMI SOC CORP.; MICROSEMI CORP. - POWER PRODUCTS GROUP; MICROSEMI CORP. - RF INTEGRATED SOLUTIONS
Reel/Frame 046251/0391 →
PATENT SECURITY AGREEMENT Recorded Feb 3, 2016
From: MICROSEMI CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.) INC. (F/K/A LEGERITY, INC., ZARLINK SEMICONDUCTOR (V.N.) INC., CENTELLAX, INC., AND ZARLINK SEMICONDUCTOR (U.S.) INC.); MICROSEMI FREQUENCY AND TIME CORPORATION (F/K/A SYMMETRICON, INC.); MICROSEMI COMMUNICATIONS, INC. (F/K/A VITESSE SEMICONDUCTOR CORPORATION); MICROSEMI SOC CORP. (F/K/A ACTEL CORPORATION); MICROSEMI CORP. - POWER PRODUCTS GROUP (F/K/A ADVANCED POWER TECHNOLOGY INC.); MICROSEMI CORP. - RF INTEGRATED SOLUTIONS (F/K/A AML COMMUNICATIONS, INC.)
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037691/0697 →
RELEASE OF SECURITY INTEREST Recorded Jan 19, 2016
From: BANK OF AMERICA, N.A.
To: MICROSEMI CORPORATION; MICROSEMI CORP.-ANALOG MIXED SIGNAL GROUP, A DELAWARE CORPORATION; MICROSEMI SOC CORP., A CALIFORNIA CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.) INC., A DELAWARE CORPORATION; MICROSEMI FREQUENCY AND TIME CORPORATION, A DELAWARE CORPORATION; MICROSEMI COMMUNICATIONS, INC. (F/K/A VITESSE SEMICONDUCTOR CORPORATION), A DELAWARE CORPORATION; MICROSEMI CORP.-MEMORY AND STORAGE SOLUTIONS (F/K/A WHITE ELECTRONIC DESIGNS CORPORATION), AN INDIANA CORPORATION
Reel/Frame 037558/0711 →
CHANGE OF NAME Recorded Dec 28, 2015
From: ACTEL CORPORATION
To: MICROSEMI SOC CORP.
Reel/Frame 037393/0572 →
NOTICE OF SUCCESSION OF AGENCY Recorded Apr 9, 2015
From: ROYAL BANK OF CANADA (AS SUCCESSOR TO MORGAN STANLEY & CO. LLC)
To: BANK OF AMERICA, N.A., AS SUCCESSOR AGENT
Reel/Frame 035657/0223 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2011
From: WHITE ELECTRONIC DESIGNS CORP.; ACTEL CORPORATION; MICROSEMI CORPORATION
To: MORGAN STANLEY & CO. INCORPORATED
Reel/Frame 025783/0613 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2008
From: LEE, POONGYEUB; LIU, MING-CHI
To: ACTEL CORPORATION
Reel/Frame 020459/0280 →