Semiconductor die with through-hole via on saw streets and through-hole via in active area of die
A semiconductor wafer contains a plurality of die with contact pads disposed on a first surface of each die. Metal vias are formed in trenches in the saw street guides and are surrounded by organic material. Traces connect the contact pads and metal vias. The metal vias can be half-circle vias or full-circle vias. Metal vias are also formed through the contact pads on the active area of the die. Redistribution layers (RDL) are formed on a second surface of the die opposite the first surface. Repassivation layers are formed between the RDL for electrical isolation. The die are stackable and can be placed in a semiconductor package with other die. The vias through the saw streets and vias through the active area of the die, as well as the RDL, provide electrical interconnect to the adjacent die.
1. A semiconductor wafer, comprising:
a plurality of die with contact pads disposed on a first surface of an active area of each die, the semiconductor wafer having saw street guides between each die;
a plurality of first metal vias formed in the saw street guides and surrounded by organic material;
a plurality of second metal vias formed in the active area of the die; and
a plurality of traces connecting the contact pads and first metal vias.
2. The semiconductor wafer of claim 1 , further including:
a plurality of redistribution layers (RDL) formed on a second surface of the die opposite the first surface; and
a plurality of repassivation layers formed between the RDL on the second surface of the die.
3. The semiconductor wafer of claim 1 , wherein the die are stackable and connected by the first and second metal vias when stacked.
4. The semiconductor wafer of claim 1 , wherein at least one metal via is formed between the contact pads on adjacent die.
5. The semiconductor wafer of claim 4 , wherein the semiconductor wafer is singulated through the at least one metal via to form metal vias electrically connected to the contact pads by the traces.
6. The semiconductor wafer of claim 1 , wherein two metal vias are formed side by side between the contact pads on adjacent die.
7. The semiconductor wafer of claim 6 , wherein the semiconductor wafer is singulated along the saw street guides between the two metal vias to form metal vias electrically connected to the contact pads by the traces.
8. The semiconductor wafer of claim 1 , further including solder bumps electrically connected to the RDL.
9. A semiconductor package, comprising:
a plurality of stacked die, each die including,
(a) a plurality of contact pads disposed on a first surface of an active area of the die,
(b) a plurality of first metal vias formed along a perimeter of the die,
(c) a plurality of second metal vias formed in the active area of the die, and
(d) a plurality of traces electrically connecting the first metal vias to the contact pads;
a plurality of redistribution layers (RDL) formed on a second surface of the die opposite the first surface; and
a plurality of repassivation layers formed between the RDL on the second surface of the die;
wherein the first and second metal vias provide electrical interconnect between the stacked die.
10. The semiconductor package of claim 9 , wherein the semiconductor wafer is singulated through the at least one metal via to form metal vias electrically connected to the contact pads by the traces.
11. The semiconductor package of claim 9 , wherein two metal vias are formed side by side between the contact pads on adjacent die.
12. The semiconductor package of claim 11 , wherein the semiconductor wafer is singulated along saw street guides between the two metal vias to form metal vias electrically connected to the contact pads by the traces.
13. A semiconductor package, comprising:
a first semiconductor die having contact pads and a plurality of first metal vias formed along a perimeter of the die electrically connected to the contact pads through a plurality of traces, the first semiconductor die further including a plurality of second metal vias formed through an active area of the die;
a second semiconductor die disposed adjacent to the first semiconductor die and electrically connected to the first semiconductor die through the first and second metal vias; and
bond wires electrically connecting the first and second semiconductor die.
14. The semiconductor package of claim 13 , wherein two metal vias are formed side by side.
15. The semiconductor package of claim 14 , wherein the semiconductor wafer is singulated along saw street guides between the two metal vias to form metal vias electrically connected to the contact pads by the traces.