Semiconductor interconnect structure with stacked vias separated by signal line and method therefor
A semiconductor device is made by forming a first conductive layer over a substrate, forming a first passivation layer over the first conductive layer, forming a first via in the first passivation layer to expose the first conductive layer, forming a second conductive layer over the first passivation layer and within the first via to electrically connect to the first conductive layer, forming a second passivation layer over the second conductive layer, and forming a second via in the second passivation layer to expose the second conductive layer. The second via is smaller than the first via. The second via is either physically separate from or disposed over the first via. The second conductive layer within the second via has a flat surface which is wider than the second via. An under bump metallization is formed in the second via and electrically connected to the second conductive layer.
1. A method of making a semiconductor device, comprising:
providing a substrate;
forming a first conductive layer over the substrate;
forming a first insulating layer over the first conductive layer;
forming a first via in the first insulating layer to expose the first conductive layer and including a maximum width and a minimum width that is different from the maximum width;
forming a second conductive layer over the first insulating layer and within the first via to electrically connect the second conductive layer to the first conductive layer, the second conductive layer including an upper surface that follows a contour of the first via;
forming a second insulating layer over the second conductive layer; and
forming a second via in the second insulating layer and extending into the first via to expose a flat surface of the second conductive layer.
2. The method of claim 1 , further including forming an under bump metallization in the second via and over the second insulating layer to electrically connect to the second conductive layer.
3. The method of claim 2 , further including:
depositing conductive material over the under bump metallization layer; and
reflowing the conductive material to form a bump.
4. The method of claim 1 , wherein the minimum width and maximum width of the first via have an average width of about 30 micrometers.
5. The method of claim 1 , wherein the minimum width and maximum width of the second via have an average width of about 15 micrometers.
6. The method of claim 1 , wherein the first conductive layer has first and second portions electrically connected by the second conductive layer.
7. The method of claim 1 , further including forming a third via in the first insulating layer offset from the first via, the third via exposing the first conductive layer.