Wirebondless wafer level package with plated bumps and interconnects
View Patent ↗A semiconductor package includes a carrier strip having a die cavity and a plurality of bump cavities. A semiconductor die is mounted in the die cavity of the carrier strip using a die attach adhesive. In one embodiment, a top surface of the semiconductor die is approximately coplanar with a top surface of the carrier strip proximate to the die cavity. Underfill material is deposited into the die cavity between the semiconductor die and a surface of the die cavity. In one embodiment, a passivation layer is deposited over the semiconductor die, and a portion of the passivation layer is etched to expose a contact pad of the semiconductor die. A metal layer is deposited over the package. The metal layer forms a package bump and a plated interconnect between the package bump and the contact pad of the semiconductor die. Encapsulant is deposited over the semiconductor package.
1. A method of making a semiconductor package, comprising:
providing a carrier strip having a die cavity and a plurality of bump cavities;
mounting a first semiconductor die in the die cavity of the carrier strip using a die attach adhesive, a top surface of the first semiconductor die being approximately coplanar with a top surface of the carrier strip proximate to the die cavity;
depositing underfill into the die cavity between the first semiconductor die and a surface of the die cavity;
forming a passivation layer over the first semiconductor die;
removing a portion of the passivation layer to expose a contact pad of the first semiconductor die;
forming a metal layer over the carrier strip to form a package bump and a plated interconnect between the package bump and the contact pad of the first semiconductor die;
depositing encapsulant over the carrier strip; and
removing the carrier strip.
2. The method of claim 1 , including:
depositing a solder material over the package bump; and
reflowing the solder material to form a solder bump.
3. The method of claim 1 , including:
mounting a second semiconductor die over the first semiconductor die using an adhesive; and
forming a wirebond between a contact pad of the second semiconductor die and the package bump.
4. The method of claim 1 , wherein the metal layer includes a plurality of layers of conductive material.
5. The method of claim 1 , wherein the package bump and the contact pad of the first semiconductor die are connected by a single layer of conductive material. Zone Name: a 4 ,AMD
6. The method of claim 1 , wherein removing the portion of the passivation layer includes depositing a layer of photoresist over the passivation layer.
7. The method of claim 1 , including depositing a second passivation layer over the semiconductor package.
8. The method of claim 1 , wherein forming the metal layer over the carrier strip includes forming a redistribution layer (RDL).
9. A method of making a semiconductor package, comprising:
providing a substrate having a die cavity and a plurality of bump cavities;
mounting a semiconductor die in the die cavity of the substrate, a top surface of the semiconductor die being approximately coplanar with a top surface of the substrate proximate to the die cavity;
forming a metal layer into one of the plurality of bump cavities of the substrate to form a package bump;
connecting the package bump and a contact pad of the semiconductor die;
forming encapsulant over the semiconductor package; and
removing the substrate.
10. The method of claim 9 , including depositing underfill into the die cavity between the semiconductor die and a surface of the die cavity.
11. The method of claim 9 , wherein connecting the package bump and the contact pad of the semiconductor die includes forming a redistribution layer (RDL) over the semiconductor package.
12. The method of claim 9 , including:
depositing a solder material over the package bump; and
reflowing the solder material to form a solder bump.
13. The method of claim 9 , wherein the metal layer includes a plurality of layers of conductive material.
14. The method of claim 9 , including:
forming a passivation layer over the semiconductor die; and
removing a portion of the passivation layer to expose the contact pad of the semiconductor die.
15. The method of claim 14 , including depositing a second passivation layer over the semiconductor package.
16. The method of claim 9 , wherein connecting the package bump and the contact pad of the semiconductor die includes forming a wirebond between the package bump and the contact pad of the semiconductor die.
17. The method of claim 9 , wherein connecting the package bump and the contact pad of the semiconductor die includes forming a plated interconnect between the package bump and the contact pad of the semiconductor die.
18. The method of claim 9 , wherein the package bump and the contact pad of the semiconductor die are connected by a single layer of conductive material.
19. The method of claim 9 , wherein mounting the semiconductor die in the die cavity of the substrate includes using a die attach adhesive.
20. A method of making a semiconductor package, comprising:
providing a substrate having a die cavity and a bump cavity;
mounting a semiconductor die in the die cavity of the substrate;
forming a metal layer over the substrate to form a package bump and an interconnect between the package bump and a contact pad of the semiconductor die;
depositing encapsulant over the semiconductor package; and
removing the substrate.
21. The method of claim 20 , including depositing underfill into the die cavity between the semiconductor die and a surface of the die cavity.
22. The method of claim 18 , including:
forming a passivation layer over the semiconductor die; and
removing a portion of the passivation layer to expose the contact pad of the semiconductor die.
23. The method of claim 20 , wherein the metal layer includes a plurality of layers of conductive material.
24. The method of claim 20 , including:
depositing a solder material over the package bump; and
reflowing the solder material to form a solder bump.
25. The method of claim 20 , wherein the package bump and the contact pad of the semiconductor die are connected by a single layer of conductive material.
26. The method of claim 20 , wherein forming the metal layer over the substrate includes forming a redistribution layer (RDL).
27. The method of claim 20 , wherein mounting the semiconductor die in the die cavity of the substrate includes using a die attach adhesive.
28. The method of claim 20 , wherein mounting the semiconductor die in the die cavity of the substrate includes a top surface of the semiconductor die being approximately coplanar with a top surface of the substrate proximate to the die cavity.
29. A method of making a semiconductor package, comprising:
providing a substrate having a die cavity and a bump cavity;
mounting a semiconductor die in the die cavity of the substrate, a top surface of the semiconductor die being approximately coplanar with a top surface of the substrate;
forming a metal layer in the bump cavity of the substrate to form a package bump;
connecting the package bump and a contact pad of the semiconductor die;
depositing encapsulant over the semiconductor package; and
removing the substrate.
30. The method of claim 29 , wherein mounting the semiconductor die in the die cavity of the substrate includes using a die attach adhesive.
31. The method of claim 29 , wherein the top surface of the semiconductor die is approximately coplanar with the top surface of the substrate proximate to the die cavity.
32. The method of claim 29 , including depositing underfill into the die cavity between the semiconductor die and a surface of the die cavity.
33. The method of claim 29 , including:
forming a passivation layer over the semiconductor die; and
removing a portion of the passivation layer to expose the contact pad of the semiconductor die.
34. The method of claim 29 , wherein connecting the package bump and a contact pad of the semiconductor die includes forming a redistribution layer (RDL) over the substrate.
35. The method of claim 29 , wherein the package bump and the contact pad of the semiconductor die are connected by a single layer of conductive material.
36. The method of claim 29 , wherein connecting the package bump and the contact pad of the semiconductor die includes forming a plated interconnect between the package bump and the contact pad of the semiconductor die.