Split gate memory cell for programmable circuit device
View Patent ↗A split-gate memory cell, includes an n-channel split-gate non-volatile memory transistor having a source, a drain, a select gate over a thin oxide, and a control gate over a non-volatile gate material and separated from the select gate by a gap. A p-channel pull-up transistor has a drain coupled to the drain of the split-gate non-volatile memory transistor, a source coupled to a bit line, and a gate. A switch transistor has first and second source/drain diffusions, and a gate coupled to the drains of the split-gate non-volatile memory transistor and the p-channel pull-up transistor. An inverter has an input coupled to the second source/drain diffusion of the switch transistor, and an output. A p-channel level-restoring transistor has a source coupled to a supply potential, a drain coupled to the first source/drain diffusion of the switch transistor and a gate coupled to the output of the inverter.
1. A split-gate memory cell, including:
an n-channel split-gate non-volatile memory transistor having a source and a drain, the source and drain defining a channel, a select gate over a portion of the channel nearest the drain, and a control gate over a non-volatile charge retention structure over a portion of the channel nearest the source, the select gate and the control gate separated by a gap;
a p-channel pull-up transistor having a drain coupled to the drain of the split-gate non-volatile memory transistor, a source coupled to a bit line, and a gate;
a switch transistor having a first source/drain diffusion, a second source/drain diffusion, and a gate coupled to the drains of the split-gate non-volatile memory transistor and the p-channel pull-up transistor;
an inverting buffer having an input coupled to the second source/drain diffusion of the switch transistor, and an output;
a p-channel level-restoring transistor having a source coupled to a supply potential, a drain coupled to the first source/drain diffusion of the switch transistor and a gate coupled to the output of the inverting buffer.
2. The split-gate memory cell of claim 1 wherein the non-volatile charge retention structure is a floating gate.
3. The split-gate memory cell of claim 1 wherein the non-volatile charge retention structure is a region of isolated nanocrystals.
4. The split-gate memory cell of claim 1 wherein the non-volatile charge retention structure is a SONOS structure.
5. A split-gate memory cell, including:
an n-channel split-gate non-volatile memory transistor having a source and a drain, the source and drain defining a channel, a select gate over a portion of the channel nearest the drain, and a control gate over a non-volatile charge retention structure over a portion of the channel nearest the source, the select gate and the control gate separated by a gap;
a p-channel split-gate non-volatile memory transistor having a drain coupled to the drain of the split-gate non-volatile memory transistor, a source coupled to a bit line, the source and drain defining a channel, a select gate over a portion of the channel nearest the drain, and a control gate over a non-volatile gate material over a portion of the channel nearest the source, the select gate and the control gate separated by a gap;
a switch transistor having a first source/drain diffusion, a second source/drain diffusion, and a gate coupled to the drains of the n-channel split-gate non-volatile memory transistor and the p-channel split-gate non-volatile memory transistor;
an inverting buffer having an input coupled to the second source/drain diffusion of the switch transistor, and an output;
a p-channel level-restoring transistor having a source coupled to a supply potential, a drain coupled to the first source/drain diffusion of the switch transistor and a gate coupled to the output of the inverting buffer.
6. The split-gate memory cell of claim 5 wherein the non-volatile charge retention structure is a floating gate.
7. The split-gate memory cell of claim 5 wherein the non-volatile charge retention structure is a region of isolated nanocrystals.
8. The split-gate memory cell of claim 5 wherein the non-volatile charge retention structure is a SONOS structure.
9. A split-gate memory cell, including:
a left n-channel split-gate non-volatile memory transistor having a source and a drain, the source and drain defining a channel, a select gate over a portion of the channel nearest the drain, and a control gate over a non-volatile charge retention structure over a portion of the channel nearest the source, the select gate and the control gate separated by a gap;
a right n-channel split-gate non-volatile memory transistor having a source and a drain, the source and drain defining a channel, a select gate over a portion of the channel nearest the drain, and a control gate over a non-volatile gate material over a portion of the channel nearest the source, the select gate and the control gate separated by a gap;
a left p-channel pull-up transistor having a drain coupled to the drain of the left n-channel split-gate non-volatile memory transistor, a source coupled to a left bit line, and a select gate coupled to the drain of the right n-channel split-gate non-volatile memory transistor;
a right p-channel pull-up transistor having a drain coupled to the drain of the right n-channel split-gate non-volatile memory transistor, a source coupled to a left bit line, and a select gate coupled to the drain of the left n-channel split-gate non-volatile memory transistor;
a pass gate including an n-channel pass-gate transistor connected in parallel with a p-channel pass-gate transistor between a switch input node and a switch output node, the n-channel pass-gate transistor having a gate coupled to the gate of a first one of the left and the right p-channel pull-up transistors, the p-channel pass-gate transistor having a gate coupled to the gate of a second one of the left and the right p-channel pull-up transistors.
10. The split-gate memory cell of claim 9 wherein the non-volatile charge retention structure is a floating gate.
11. The split-gate memory cell of claim 9 wherein the non-volatile charge retention structure is a region of isolated nanocrystals.
12. The split-gate memory cell of claim 9 wherein the non-volatile charge retention structure is a SONOS structure.