Double-sided semiconductor device and method of forming top-side and bottom-side interconnect structures
View Patent ↗A semiconductor device is made by forming a first active device on a first side of a semiconductor wafer. A first insulating layer is formed over the first side of the wafer. A first conductive layer is formed over the first insulating layer. A first interconnect structure is formed over the first insulating layer and first conductive layer. A temporary carrier is mounted to the first interconnect structure. A second active device is formed on a second side of the semiconductor wafer. A second insulating layer is formed over the second side of the wafer. A second conductive layer is formed over the second insulating layer. A second interconnect structure is formed over the second insulating layer and second conductive layer. The temporary carrier is removed, leaving a double-sided semiconductor device. The double-sided semiconductor device is enclosed in a package with the first and second interconnect structures electrically connected.
1. A method of manufacturing a semiconductor device having a first active device, comprising:
providing a semiconductor wafer;
forming a first active device on a first side of the semiconductor wafer;
forming a first insulating layer over the first side of the semiconductor wafer;
forming a first conductive layer over the first insulating layer;
forming a first interconnect structure over the first insulating layer and first conductive layer, the first interconnect structure being electrically connected to the first active device through the first conductive layer;
mounting a pre-fabricated temporary carrier to the first interconnect structure;
after mounting the pre-fabricated temporary carrier, performing a chemical-mechanical polishing (CMP) process on a second side of the semiconductor wafer opposite the first side of the semiconductor wafer;
forming a second active device on a second side of the semiconductor wafer;
forming a second insulating layer over the second side of the semiconductor wafer;
forming a second conductive layer over the second insulating layer;
forming a second interconnect structure over the second insulating layer and second conductive layer, the second interconnect structure being electrically connected to the second active device through the second conductive layer;
forming a third insulating layer over the second interconnect structure; and
removing the pre-fabricated temporary carrier.
2. The method of claim 1 , wherein the first active device includes a bipolar transistor having a base region, emitter region, and collector region.
3. The method of claim 1 , further including:
forming an under bump metallization layer over the third insulating layer, the under bump metallization layer being electrically connected to the second interconnect structure; and
forming an electrical interconnect over the under bump metallization layer.
4. The method of claim 1 , further including:
forming a fourth insulating layer over the first interconnect structure; and
forming a third conductive layer over the fourth insulating layer, the third conductive layer being electrically connected to the first interconnect structure.
5. The method of claim 4 , further including:
providing a substrate having an interconnect structure;
mounting the semiconductor device to the substrate;
electrically connecting the third conductive layer to the interconnect structure of the substrate; and
forming an encapsulant over the semiconductor device and substrate.
6. The method of claim 1 , further including:
forming a through silicon via (THV) in the semiconductor wafer; and
filling the THV with conductive material.
7. The method of claim 6 , further including:
providing a substrate having an interconnect structure;
mounting the semiconductor device to the substrate; and
electrically connecting the first and second interconnect structures to the interconnect structure of the substrate through the THV.
8. A method of manufacturing a semiconductor device having a first active device, comprising:
providing a semiconductor wafer;
forming a first active device on a first side of the semiconductor wafer;
forming a first interconnect structure over the first side of the semiconductor wafer, the first interconnect structure being electrically connected to the first active device;
mounting a temporary carrier to the first interconnect structure;
forming a second active device on a second side of the semiconductor wafer opposite the first side of the semiconductor wafer;
forming a second interconnect structure over the second side of the semiconductor wafer, the second interconnect structure being electrically connected to the second active device;
removing the temporary carrier;
forming a first insulating layer over the first side of the semiconductor wafer; and
forming a first conductive layer over the first insulating layer, the first conductive layer being electrically connected to the first interconnect structure.
9. The method of claim 8 , wherein the first active device includes a bipolar transistor having a base region, emitter region, and collector region.
10. The method of claim 8 , wherein forming the first interconnect structure includes:
forming a third insulating layer;
forming a third conductive layer over the third insulating layer.
11. The method of claim 8 , further including:
providing a substrate having an interconnect structure;
mounting the semiconductor device to the substrate;
electrically connecting the first interconnect structure to the interconnect structure of the substrate; and
forming an encapsulant over the semiconductor device and substrate.
12. The method of claim 8 , further including:
forming a through silicon via (THV) in the semiconductor wafer; and
filling the THV with conductive material.
13. The method of claim 12 , further including:
providing a substrate having an interconnect structure;
mounting the semiconductor device to the substrate; and
electrically connecting the first and second interconnect structures to the interconnect structure of the substrate through the THV.
14. A method of manufacturing a semiconductor device having a first active device, comprising:
providing a semiconductor wafer;
forming a first active device on a first side of the semiconductor wafer;
forming a first interconnect structure over the first side of the semiconductor wafer, the first interconnect structure being electrically connected to the first active device;
forming a second active device on a second side of the semiconductor wafer opposite the first side of the semiconductor wafer;
forming a second interconnect structure over the second side of the semiconductor wafer, the second interconnect structure being electrically connected to the second active device.
forming a first insulating layer over the first side of the semiconductor wafer; and
forming a first conductive layer over the first insulating layer, the first conductive layer being electrically connected to the first active device.
15. The method of claim 14 , wherein the first active device includes a bipolar transistor having a base region, emitter region, and collector region.
16. The method of claim 14 , further including:
providing a substrate having an interconnect structure;
mounting the semiconductor device to the substrate;
electrically connecting the first interconnect structure to the interconnect structure of the substrate; and
forming an encapsulant over the semiconductor device and substrate.
17. The method of claim 14 , further including:
forming a through silicon via (THV) in the semiconductor wafer; and
filling the THV with conductive material.
18. The method of claim 17 , further including:
providing a substrate having an interconnect structure;
mounting the semiconductor device to the substrate; and
electrically connecting the first and second interconnect structures to the interconnect structure of the substrate through the THV.
19. The method of claim 1 , wherein mounting the pre-fabricated temporary carrier comprises attaching the pre-fabricated temporary carrier to the first interconnect structure using an adhesive layer.
20. The method of claim 8 , wherein mounting the temporary carrier comprises mounting a pre-fabricated, rigid material to the first interconnect structure.
21. The method of claim 14 , further comprising attaching a rigid material to the first interconnect structure using an adhesive layer.