Semiconductor device and method of forming a shielding layer between stacked semiconductor die
View Patent ↗A semiconductor device has a first semiconductor die with a shielding layer formed over its back surface. The first semiconductor die is mounted to a carrier. A first insulating layer is formed over the shielding layer. A second semiconductor die is mounted over the first semiconductor die separated by the shielding layer and first insulating layer. A second insulating layer is deposited over the first and second semiconductor die. A first interconnect structure is formed over the second semiconductor die and second insulating layer. A second interconnect structure is formed over the first semiconductor die and second insulating layer. The shielding layer is electrically connected to a low-impedance ground point through a bond wire, RDL, or TSV. The second semiconductor die may also have a shielding layer formed on its back surface. The semiconductor die are bonded through the metal-to-metal shielding layers.
1. A method of manufacturing a semiconductor device, comprising:
providing a first semiconductor die having an active surface;
forming a shielding layer over a back surface of the first semiconductor die opposite the active surface;
providing a sacrificial carrier;
leading with the active surface, mounting the first semiconductor die to the sacrificial carrier;
forming a first insulating layer over the shielding layer;
mounting a second semiconductor die over the first semiconductor die separated by the shielding layer and first insulating layer;
depositing a second insulating layer over the first and second semiconductor die;
forming a first interconnect structure over the second semiconductor die and second insulating layer;
removing the sacrificial carrier; and
forming a second interconnect structure over the first semiconductor die and second insulating layer.
2. The method of claim 1 , further including:
forming a conductive layer over the sacrificial carrier; and
forming a conductive pillar over the conductive layer, the conductive pillar being electrically connected between the first and second interconnect structures.
3. The method of claim 1 , further including electrically connecting the shielding layer to the second interconnect structure with a bond wire.
4. The method of claim 1 , further including electrically connecting the shielding layer to the second interconnect structure with a redistribution layer.
5. The method of claim 1 , further including:
forming a through silicon via in the first semiconductor die; and
electrically connecting the shielding layer to the second interconnect structure with the through silicon via.
6. The method of claim 1 , wherein forming the first and second interconnect structure includes:
forming a plurality of conductive layers; and
forming a plurality of insulating layers between the conductive layers.
7. The method of claim 1 , further including electrically connecting the shielding layer to a low-impedance ground point.
8. A method of manufacturing a semiconductor device, comprising:
providing a first semiconductor die having an active surface;
forming a first shielding layer over a back surface of the first semiconductor die opposite its active surface;
providing a second semiconductor die having an active surface;
forming a second shielding layer over a back surface of the second semiconductor die opposite its active surface;
mounting the second semiconductor to the first semiconductor by bonding the second shielding layer to the first shielding layer;
depositing a first insulating layer over the first and second semiconductor die;
forming a first interconnect structure over the second semiconductor die and first insulating layer; and
forming a second interconnect structure over the first semiconductor die and first insulating layer.
9. The method of claim 8 , further including forming a conductive pillar between the first and second interconnect structures.
10. The method of claim 8 , further including electrically connecting the first and second shielding layers to the second interconnect structure with a bond wire or redistribution layer.
11. The method of claim 8 , further including:
forming a through silicon via in the first semiconductor die; and
electrically connecting the first and second shielding layers to the second interconnect structure with the through silicon via.
12. The method of claim 8 , further including forming a second insulating layer over the first shielding layer.
13. The method of claim 8 , further including electrically connecting the first and second shielding layers to a low-impedance ground point.
14. A method of manufacturing a semiconductor device, comprising:
disposing a first shielding layer between first and second semiconductor die;
depositing a first insulating layer over the first and second semiconductor die; and
forming a first interconnect structure over the second semiconductor die and first insulating layer.
15. The method of claim 14 , further including forming a second interconnect structure over the first semiconductor die and first insulating layer.
16. The method of claim 15 , further including forming a conductive pillar between the first and second interconnect structures.
17. The method of claim 15 , further including electrically connecting the first shielding layer to the second interconnect structure with a bond wire or redistribution layer.
18. The method of claim 15 , further including:
forming a through silicon via in the first semiconductor die; and
electrically connecting the first shielding layer to the second interconnect structure with the through silicon via.
19. The method of claim 14 , further including disposing a second shielding layer between first and second semiconductor die.
20. The method of claim 14 , further including forming a second insulating layer over the first shielding layer.
21. A method of manufacturing a semiconductor device, comprising:
providing a first semiconductor die;
forming a shielding layer over a surface of the first semiconductor die;
mounting a second semiconductor die over the first semiconductor die separated by the shielding layer;
depositing an insulating layer around the first and second semiconductor die; and
forming a first interconnect structure over the second semiconductor die and insulating layer.
22. The method of claim 21 , further including forming a second interconnect structure over the first semiconductor die and insulating layer.
23. The method of claim 22 , further including forming a conductive pillar between the first and second interconnect structures.
24. The method of claim 22 , further including forming a bond wire between the shielding layer and second interconnect structure.
25. The method of claim 22 , further including:
forming a through silicon via in the first semiconductor die; and
electrically connecting the shielding layer to the second interconnect structure with the through silicon via.
26. The method of claim 21 , further including electrically connecting the shielding layer to a low-impedance ground point.