Multi-bit resistance-switching memory cell

1. A non-volatile storage apparatus, comprising:

a set of Y lines;

a set of X lines; and

a plurality of memory cells in communication with the set of X lines and the set of Y lines, each memory cell of the plurality of memory cells includes:

a resistance element that is statically in a conductive state for the remaining operational life of the non-volatile storage apparatus, and

two or more reversible resistance-switching elements, the resistance element that is statically in the conductive state for the remaining operational life of the non-volatile storage apparatus and the two or more reversible resistance-switching elements are connected to different Y lines of the set of Y lines, the resistance element that is statically in the conductive state for the remaining operational life of the non-volatile storage apparatus and the two or more reversible resistance-switching elements are connected to a common X line of the set of X lines.

2. A non-volatile storage apparatus according to claim 1 , wherein:

multiple bits of data are programmed into a particular memory cell of the plurality of memory cells by causing current flow between Y lines connected to the particular memory cell.

3. A non-volatile storage apparatus according to claim 1 , wherein:

one or more of the reversible resistance-switching elements for a particular memory cell of the plurality of memory cells are set to a low resistance state by a current flow between Y lines for the particular memory cell.

4. A non-volatile storage apparatus according to claim 3 , wherein:

a particular one of the reversible resistance-switching elements for the particular memory cell is set to a high resistance state by a current flow between a Y line connected to the particular one of the reversible resistance-switching elements and the common X line.

5. A non-volatile storage apparatus according to claim 3 , further comprising:

a semiconductor region of a first type running along the common X line; and

semiconductor regions of a second type adjacent the semiconductor region of the first type, each of the semiconductor regions of the second type are each adjacent one of the reversible resistance-switching elements or the resistance element that is statically in the conductive state for the remaining operational life of the non-volatile storage apparatus, the current flow between Y lines for the particular memory cell includes the semiconductor region of the first type and the semiconductor regions of the second type operating like a transistor.

6. A non-volatile storage apparatus according to claim 3 , further comprising:

a rail-shaped semiconductor region of a first type running along the common X line;

pillar shaped semiconductor regions of a second type adjacent the semiconductor region of the first type, each of the semiconductor regions of the second type are adjacent one of the reversible resistance-switching elements, the reversible resistance-switching elements are pillar shaped; and

additional pillar shaped semiconductor regions of the second type each of which are adjacent one of the reversible resistance-switching elements or the resistance element that is statically in the conductive state for the remaining operational life of the non-volatile storage apparatus, the reversible resistance-switching elements can switch between the low resistance state and the high resistance state.

7. A non-volatile storage apparatus, comprising:

a set of Y lines;

a set of X lines; and

a plurality of memory cells in communication with the set of X lines and the set of Y lines, each memory cell of the plurality of memory cells includes:

a resistance element in a static resistance condition, and

two or more reversible resistance-switching elements, the resistance element in the static resistance condition and the two or more reversible resistance-switching elements are connected to different Y lines of the set of Y lines, the resistance element in the static resistance condition and the two or more reversible resistance-switching elements are connected to a common X line of the set of X lines;

the resistance element in the static resistance condition for a particular memory cell of the plurality of memory cells is connected to a first Y line;

a first reversible resistance-switching element for the particular memory cell is connected to a second Y line;

a second reversible resistance-switching element for the particular memory cell is connected to a third Y line;

the first reversible resistance-switching element is changed to a first state by passing a current from the first Y line to the second Y line via the resistance element in the static resistance condition;

the second reversible resistance-switching element is changed to the first state by passing a current from the second Y line to the third Y line via the first reversible resistance-switching element;

the first reversible resistance-switching element is changed to a second state from the first state by passing a current from the second Y line to the common X line;

the second reversible resistance-switching element is changed to the second state from the first state by passing a current from the third Y line to the common X line;

the static resistance condition is a conductive state.

8. A non-volatile storage apparatus according to claim 7 , wherein:

the resistance element in the static resistance condition is permanently in a conductive state.

9. A non-volatile storage apparatus according to claim 7 , wherein:

the plurality of memory cells comprise a three-dimensional monolithic memory array.

10. A non-volatile storage apparatus according to claim 7 , wherein:

the resistance element in the static resistance condition is permanently in a conductive state.

11. A non-volatile storage apparatus according to claim 7 , wherein:

the plurality of memory cells comprise a three-dimensional monolithic memory array.

12. A non-volatile storage apparatus, comprising:

a set of Y lines;

a set of X lines;

a plurality of memory cells in communication with the set of X lines and the set of Y lines, each memory cell of the plurality of memory cells includes:

a resistance element in a static resistance condition,

two or more reversible resistance-switching elements, the resistance element in the static resistance condition and the two or more reversible resistance-switching elements are connected to different Y lines of the set of Y lines, the resistance element in the static resistance condition and the two or more reversible resistance-switching elements are connected to a common X line of the set of X lines,

a semiconductor region of a first type running along the common X line, and

semiconductor regions of a second type adjacent the semiconductor region of the first type, each of the semiconductor regions of the second type are each adjacent one of the reversible resistance-switching elements or the resistance element in the static resistance condition, current flow between Y lines for the particular memory cell includes the semiconductor region of the first type and the semiconductor regions of the second type operating like a transistor.

13. A non-volatile storage apparatus according to claim 12 , wherein:

multiple bits of data are programmed into the particular memory cell of the plurality of memory cells by causing current flow between Y lines connected to the particular memory cell.

14. A non-volatile storage apparatus according to claim 12 , wherein:

the resistance element in the static resistance condition is permanently in a conductive state.

15. A non-volatile storage apparatus according to claim 12 , wherein:

the plurality of memory cells comprise a three-dimensional monolithic memory array.

16. A non-volatile storage apparatus according to claim 12 , wherein:

the semiconductor region of the first type is a n-type; and

the semiconductor regions of the second type are a p-type.

17. A non-volatile storage apparatus according to claim 12 , wherein:

data is programmed into the particular memory cell of the plurality of memory cells by causing current flow between Y lines connected to the particular memory cell.

18. A non-volatile storage apparatus, comprising:

a set of Y lines;

a set of X lines;

a plurality of memory cells in communication with the set of X lines and the set of Y lines, each memory cell of the plurality of memory cells includes:

a resistance element in a static resistance condition, and

two or more reversible resistance-switching elements, the resistance element in the static resistance condition and the two or more reversible resistance-switching elements are connected to different Y lines of the set of Y lines, the resistance element in the static resistance condition and the two or more reversible resistance-switching elements are connected to a common X line of the set of X lines,

portions of the two or more reversible resistance-switching elements, the resistance element in the static resistance condition and the common X line operate like transistors during current flow between Y lines for a particular memory cell.

19. A non-volatile storage apparatus according to claim 18 , wherein:

data is programmed into the particular memory cell of the plurality of memory cells by causing current flow between Y lines connected to the particular memory cell.

20. A non-volatile storage apparatus according to claim 18 , wherein:

the resistance element in the static resistance condition is permanently in a conductive state.

21. A non-volatile storage apparatus according to claim 18 , wherein:

the plurality of memory cells comprise a three-dimensional monolithic memory array.

22. A non-volatile storage apparatus according to claim 18 , wherein:

multiple bits of data are programmed into the particular memory cell of the plurality of memory cells by causing current flow between Y lines connected to the particular memory cell.