Semiconductor device and method of forming shielding along a profile disposed in peripheral region around the device
A semiconductor device has a semiconductor die with a peripheral region around the die. A first insulating material is deposited in the peripheral region. A conductive via is formed through the first insulating material. A conductive layer is formed over the semiconductor die. The conductive layer is electrically connected between the conductive via and a contact pad of the semiconductor die. A second insulating layer is deposited over the first insulating layer, conductive layer, and semiconductor die. A profile is formed in the first and second insulating layers in the peripheral region. The profile is tapered, V-shaped, truncated V-shape, flat, or vertical. A shielding layer is formed over the first and second insulating layers to isolate the semiconductor die from inter-device interference. The shielding layer conforms to the profile in the peripheral region and electrically connects the shielding layer to the conductive via.
1. A semiconductor device, comprising:
a semiconductor die having a peripheral region around the semiconductor die;
a first insulating material deposited in the peripheral region;
a conductive via formed through the first insulating material in the peripheral region;
a conductive layer formed over the first insulating layer and semiconductor die, the conductive layer being electrically connected to the conductive via and a contact pad of the semiconductor die;
a second insulating layer deposited over the first insulating layer, conductive layer, and semiconductor die, the first and second insulating layers having a profile formed in the peripheral region around the semiconductor die;
an opening formed in the second insulating layer to expose the conductive layer; and
a shielding layer formed over the first and second insulating layers to isolate the semiconductor die from inter-device interference, the shielding layer conforming to the profile in the peripheral region around the semiconductor die and to the opening to electrically connect the shielding layer to the conductive via.
2. The semiconductor device of claim 1 , wherein the profile has a shape selected from the group consisting of tapered, V-shaped, truncated V-shape, flat, curved, and vertical.
3. The semiconductor device of claim 1 , wherein the shielding layer is electrically connected to a ground point through the conductive via.
4. The semiconductor device of claim 1 , further including an interconnect structure formed on a backside of the semiconductor die opposite the contact pads, the interconnect structure being electrically connected to the conductive via.
5. The semiconductor device of claim 1 , further including first and second stacked semiconductor die each having a shielding layer, the shielding layer of the first semiconductor die and the shielding layer of the second semiconductor die being electrically connected to a ground point through separate conductive paths.
6. The semiconductor device of claim 1 , further including first and second stacked semiconductor die each having a shielding layer, the shielding layer of the first semiconductor die and the shielding layer of the second semiconductor die being electrically connected to a ground point through a common conductive path.
7. A semiconductor device, comprising:
a semiconductor die having a peripheral region around the semiconductor die;
a first insulating material deposited in the peripheral region;
a conductive via formed through the first insulating material in the peripheral region;
a second insulating layer deposited over the first insulating layer and semiconductor die, the first and second insulating layers having a profile formed in the peripheral region around the semiconductor die; and
a shielding layer formed over the first and second insulating layers to isolate the semiconductor die from inter-device interference, the shielding layer conforming to the profile in the peripheral region around the semiconductor die and being electrically connected to the conductive via.
8. The semiconductor device of claim 7 , further including:
a conductive layer formed over the semiconductor die, the conductive layer being electrically connected to the conductive via and a contact pad of the semiconductor die; and
an opening formed in the second insulating layer to expose the conductive layer.
9. The semiconductor device of claim 7 , wherein the profile has a shape selected from the group consisting of tapered, V-shaped, truncated V-shape, flat, curved, and vertical.
10. The semiconductor device of claim 7 , wherein the shielding layer is electrically connected to a ground point through the conductive via.
11. The semiconductor device of claim 7 , further including first and second stacked semiconductor die each having a shielding layer, the shielding layer of the first semiconductor die and the shielding layer of the second semiconductor die being electrically connected to a ground point through separate conductive paths.
12. The semiconductor device of claim 7 , further including first and second stacked semiconductor die each having a shielding layer, the shielding layer of the first semiconductor die and the shielding layer of the second semiconductor die being electrically connected to a ground point through a common conductive path.
13. The semiconductor device of claim 7 , further including an interconnect structure formed on a backside of the semiconductor die opposite the contact pads, the interconnect structure being electrically connected to the conductive via.
14. A semiconductor device, comprising:
a semiconductor die having a peripheral region;
a first insulating material deposited in the peripheral region;
a conductive via formed through the first insulating material;
a second insulating layer deposited over the first insulating layer and semiconductor die, the first and second insulating layers having a profile formed in the peripheral region around the semiconductor die; and
a shielding layer formed over the first and second insulating layers to isolate the semiconductor die from inter-device interference, the shielding layer conforming to the profile in the peripheral region around the semiconductor die.
15. The semiconductor device of claim 14 , further including:
a conductive layer formed over the semiconductor die, the conductive layer being electrically connected to the conductive via and a contact pad of the semiconductor die; and
an opening formed in the second insulating layer to expose the conductive layer.
16. The semiconductor device of claim 14 , wherein the profile has a shape selected from the group consisting of tapered, V-shaped, truncated V-shape, flat, curved, and vertical.
17. The semiconductor device of claim 14 , wherein the shielding layer is electrically connected to a ground point through the conductive via.
18. The semiconductor device of claim 14 , further including first and second stacked semiconductor die each having a shielding layer, the shielding layer of the first semiconductor die and the shielding layer of the second semiconductor die being electrically connected to a ground point through separate conductive paths.
19. The semiconductor device of claim 14 , further including first and second stacked semiconductor die each having a shielding layer, the shielding layer of the first semiconductor die and the shielding layer of the second semiconductor die being electrically connected to a ground point through a common conductive path.
20. A semiconductor device, comprising:
a semiconductor die having a peripheral region;
a first insulating material formed in the peripheral region;
a conductive via formed through the first insulating material in the peripheral region around the semiconductor die;
a second insulating layer formed over the first insulating layer and semiconductor die; and
a shielding layer formed over the first and second insulating layers to isolate the semiconductor die from inter-device interference.
21. The semiconductor device of claim 20 , wherein the shielding layer conforms to a profile in the peripheral region around the semiconductor die and is electrically connected to the conductive via.
22. The semiconductor device of claim 20 , wherein the profile has a shape selected from the group consisting of tapered, V-shaped, truncated V-shape, flat, curved, and vertical.
23. The semiconductor device of claim 20 , wherein the shielding layer is electrically connected to a ground point through the conductive via.
24. The semiconductor device of claim 20 , further including first and second stacked semiconductor die each having a shielding layer, the shielding layer of the first semiconductor die and the shielding layer of the second semiconductor die being electrically connected to a ground point through separate conductive paths.
25. The semiconductor device of claim 20 , further including first and second stacked semiconductor die each having a shielding layer, the shielding layer of the first semiconductor die and the shielding layer of the second semiconductor die being electrically connected to a ground point through a common conductive path.