Semiconductor device and method of forming vertically offset bond on trace interconnects on different height traces
View Patent ↗A semiconductor device has a vertically offset BOT interconnect structure. The vertical offset is achieved by forming different height first and second conductive layer above a substrate. A first patterned photoresist layer is formed over the substrate. A first conductive layer is formed in the first patterned photoresist layer. The first patterned photoresist layer is removed. A second patterned photoresist layer is formed over the substrate. A second conductive layer is formed in the second patterned photoresist layer. The height of the second conductive layer, for example 25 micrometers, is greater than the height of the first conductive layer which is 5 micrometers. The first and second conductive layers are interposed between each other close together to minimize pitch and increase I/O count while maintaining sufficient spacing to avoid electrical shorting after bump formation. An interconnect structure is formed over the first and second conductive layers.
1. A method of making a semiconductor device, comprising:
providing a substrate;
forming a first patterned photoresist layer over the substrate;
forming first conductive layers having a first height in the first patterned photoresist layer;
removing the first patterned photoresist layer;
forming a second patterned photoresist layer over the substrate;
forming second conductive layers having a second height in the second patterned photoresist layer, the second height greater than the first height, each second conductive layer being positioned adjacent to a first conductive layer and each first conductive layer being positioned adjacent to a second conductive layer, and wherein a pitch between the first conductive layer and the second conductive layer is less than sixty (60) micrometers;
removing the second patterned photoresist layer; and
forming first bumps and second bumps over the first and second conductive layers, respectively, wherein second bumps overlap neighboring first bumps, wherein a height and a width of the first bumps are substantially the same as a height and a width of the second bumps, and wherein uppermost surfaces of the second bumps are vertically offset from uppermost surfaces of the first bumps.
2. The method of claim 1 , further including forming bond wires on the first and second bumps.
3. The method of claim 1 , further including:
forming the first conductive layer to a height of 5 micrometers; and
forming the second conductive layer to a height of 25 micrometers.
4. The method of claim 1 , further including forming a solder mask around the first and second conductive layers prior to forming the first and second bumps.
5. A method of making a semiconductor device, comprising:
providing a substrate;
forming first conductive layers having a first height over the substrate;
forming second conductive layers having a second height over the substrate, the second height being greater than the first height, the first and second conductive layers being interposed with respect to each other, and wherein a pitch between the first and second conductive layers is less than 60 micrometers; and
forming first and second interconnect structures over the first and second conductive layers, respectively, wherein upper surfaces of the second interconnect structures are vertically offset from upper surfaces of the first interconnect structures.
6. The method of claim 5 , wherein forming the first and second interconnect structures includes forming conductive posts or bond wires over the first and second conductive layers.
7. The method of claim 5 , wherein forming the first conductive layers includes:
forming a first patterned photoresist layer over the substrate;
forming the first conductive layers in the first patterned photoresist layer; and
removing the first patterned photoresist layer.
8. The method of claim 5 , wherein forming the second conductive layers includes:
forming a second patterned photoresist layer over the substrate;
forming the second conductive layers in the second patterned photoresist layer; and
removing the second patterned photoresist layer.
9. The method of claim 5 , further including forming bond wires on the first and second interconnect structures.
10. The method of claim 5 , further including:
forming the first conductive layers to a height of 5 micrometers; and
forming the second conductive layers to a height of 25 micrometers.
11. The method of claim 5 , further including forming a solder mask around the first and second conductive layers prior to forming the first and second interconnect structures.
12. The method of claim 5 , wherein forming first and second interconnect structures comprises forming first and second conductive bumps, wherein the second conductive bumps overlap the first conductive bumps.
13. A method of making a semiconductor device, comprising:
providing a substrate; and
forming bumps on trace (BOT) interconnect structure over the substrate, the BOT interconnect structure including,
(a) first conductive layers disposed over the substrate,
(b) second conductive layers disposed over the substrate, the second conductive layers having a height greater than a height of the first conductive layers, the first and second conductive layers being interposed with respect to each other, and wherein a pitch between the first and second conductive layers is less than 60 micrometers, and
(c) an interconnect structure disposed over the first and second conductive layers.
14. The method of claim 13 , wherein the interconnect structure includes:
first and second bumps disposed over the first and second conductive layers, respectively; and
bond wires disposed on the first and second bumps.
15. The method of claim 14 , wherein upper surfaces of the second bumps are vertically offset from upper surfaces of the first bumps, and wherein a height and a width of the first bumps are substantially the same as a height and a width of the second bumps.
16. The method of claim 13 , wherein forming the first conductive layers includes:
forming a first patterned photoresist layer over the substrate;
forming the first conductive layers in the first patterned photoresist layer; and
removing the first patterned photoresist layer.
17. The method of claim 13 , wherein forming the second conductive layers includes:
forming a second patterned photoresist layer over the substrate;
forming the second conductive layers in the second patterned photoresist layer; and
removing the second patterned photoresist layer.
18. The method of claim 13 , further including:
forming the first conductive layers to a height of 5 micrometers; and
forming the second conductive layers to a height of 25 micrometers.
19. The method of claim 13 , further including forming a solder mask around the first and second conductive layers prior to forming the interconnect structure.
20. A semiconductor device, comprising:
a substrate;
a first conductive layer formed over the substrate;
a second conductive layer formed over the substrate, the second conductive layer having a height greater than a height of the first conductive layer, the first and second conductive layers being interposed with respect to each other; and
first and second interconnect structures formed over the first and second conductive layers, respectively, wherein upper surfaces of the second interconnect structures are vertically offset from upper surfaces of the first interconnect structures.
21. The semiconductor device of claim 20 , wherein the first and second interconnect structures include conductive posts or bond wires formed over the first and second conductive layers.
22. The semiconductor device of claim 21 , wherein the first and second interconnect structures comprise:
first and second bumps formed over the first and second conductive layers, respectively, wherein the second bumps overlap the first bumps; and
bond wires formed on the first and second bumps.
23. The semiconductor device of claim 20 , wherein the first conductive layer has a height of 5 micrometers and the second conductive layer has a height of 25 micrometers.
24. The semiconductor device of claim 20 , further including a solder mask formed around the first and second conductive layers.
25. The semiconductor device of claim 20 , wherein a pitch between the first and the second conductive layers is less than 60 micrometers.