Filp chip interconnection structure with bump on partial pad and method thereof
A semiconductor package includes a semiconductor die with a plurality of solder bumps formed on bump pads. A substrate has a plurality of contact pads each with an exposed sidewall. A solder resist is disposed opening over at least a portion of each contact pad. The solder bumps are reflowed to metallurgically and electrically connect to the contact pads. Each contact pad is sized according to a design rule defined by SRO+2*SRR−2X, where SRO is the solder resist opening, SRR is a solder registration for the manufacturing process, and X is a function of a thickness of the exposed sidewall of the contact pad. The value of X ranges from 5 to 20 microns. The solder bump wets the exposed sidewall of the contact pad and substantially fills an area adjacent to the exposed sidewall. The contact pad can be made circular, rectangular, or donut-shaped.
1. A semiconductor device, comprising:
a semiconductor die including a plurality of bumps formed over the semiconductor die;
a substrate including a plurality of contact pads with the bumps contacting a sidewall of the contact pads; and
an insulating layer formed over the substrate and a portion of each contact pad, the insulating layer including a plurality of openings over and misaligned with the contact pads, wherein each contact pad includes a diameter defined by a design rule SRO+2*SRR−2X, where SRO is a width of the opening, SRR is a registration of the opening, and X is a maximum distance an opening extends outside a footprint of a respective contact pad.
2. The semiconductor device of claim 1 , wherein a value of X ranges from 5 to 20 microns.
3. The semiconductor device of claim 1 , wherein a diameter of each contact pad is equal to a diameter of a corresponding opening.
4. The semiconductor device of claim 1 , wherein a diameter of each contact pad is smaller than a diameter of a corresponding opening.
5. The semiconductor device of claim 1 , wherein a diameter of each contact pad is larger than a diameter of a corresponding opening.
6. The semiconductor device of claim 1 , wherein each bump substantially fills an area adjacent to the sidewall of a contact pad.
7. The semiconductor device of claim 1 , wherein the contact pads are circular, rectangular, or donut-shaped.
8. The semiconductor device of claim 1 , wherein the distance X is one to two times a thickness of a portion of the sidewall of the contact pads over a surface of the substrate.
9. A semiconductor device, comprising:
a substrate including a contact pad; and
an insulating layer including an opening formed over the substrate and misaligned with respect to the contact pad, wherein the opening is formed over a first continuous portion of a sidewall of the contact pad while the insulating layer remains over a second continuous portion of the sidewall of the contact pad and the first continuous portion of the sidewall contacts the second continuous portion at two different locations.
10. The semiconductor device of claim 9 , wherein the contact pad includes a width defined by a design rule SRO+2*SRR−2X, where SRO is a width of the opening, X is a maximum distance the opening extends outside a footprint of the contact pad, and SRR is a registration of the opening.
11. The semiconductor device of claim 10 , wherein the distance X ranges from 5 to 20 microns.
12. The semiconductor device of claim 10 , wherein the distance X is one to two times a thickness of a portion of the sidewall of the contact pad over a surface of the substrate.
13. The semiconductor device of claim 9 , further including a semiconductor die comprising an interconnect structure connected to the contact pad.
14. The semiconductor device of claim 9 , further including an interconnect structure formed through the opening over the contact pad.
15. The semiconductor device of claim 9 , wherein a size of the contact pad is equal to a size of the opening.
16. The semiconductor device of claim 9 , wherein a size of the contact pad is smaller or larger than a size of the opening.
17. A semiconductor device, comprising:
a semiconductor die including an interconnect structure;
a substrate including a contact pad, wherein the interconnect structure contacts an outer sidewall of the contact pad; and
an opening disposed over a first portion of the outer sidewall while a second portion of the outer sidewall opposite the first portion of the outer sidewall extends outside a footprint of the opening.
18. The semiconductor device of claim 17 , wherein the contact pad includes a width defined by a design rule SRO+2*SRR−2X, where SRO is a width of the opening, X is a maximum distance the opening extends outside a footprint of the contact pad, and SRR is a registration of the opening.
19. The semiconductor device of claim 18 , wherein a value of X ranges from 5 to 20 microns.
20. The semiconductor device of claim 17 , wherein a size of the contact pad is equal to a size of the opening.
21. The semiconductor device of claim 17 , wherein a size of the contact pad is smaller or larger than a size of the opening.
22. A semiconductor device, comprising:
a substrate including a contact pad comprising a generally circular shape;
an opening disposed over the substrate and an outer sidewall of the contact pad, wherein the contact pad extends outside a footprint of the opening; and
a semiconductor die comprising an interconnect structure electrically connected to the contact pad with the interconnect structure contacting the outer sidewall of the contact pad.
23. The semiconductor device of claim 22 , wherein the contact pad includes a width defined by a design rule SRO+2*SRR−2X, where SRO is a width of the opening, X is a maximum distance the opening extends outside a footprint of the contact pad, and SRR is a registration of the opening.
24. The semiconductor device of claim 23 , wherein a value of X ranges from 5 to 20 microns.
25. The semiconductor device of claim 22 , wherein a size of the contact pad is equal to a size of the opening.
26. The semiconductor device of claim 22 , wherein a size of the contact pad is smaller or larger than a size of the opening.
27. The semiconductor device of claim 23 , wherein the distance X is one to two times a thickness of a portion of the outer sidewall of the contact pad over a surface of the substrate.