Semiconductor device having electrical devices mounted to IPD structure and method of shielding electromagnetic interference
View Patent ↗A semiconductor device has an IPD structure formed over a substrate. First and second electrical devices are mounted to a first surface of the IPD structure. An encapsulant is deposited over the first and second electrical devices and IPD structure. A shielding layer is formed over the encapsulant and electrically connected to a conductive channel in the IPD structure. The conductive channel is connected to ground potential to isolate the first and second electrical devices from external interference. A recess can be formed in the encapsulant material between the first and second electrical devices. The shielding layer extends into the recess. An interconnect structure is formed on a second surface of the IPD structure. The interconnect structure is electrically connected to the first and second electrical devices and IPD structure. A shielding cage can be formed over the first electrical device prior to depositing encapsulant.
1. A semiconductor device, comprising:
a substrate;
an integrated passive device (IPD) structure formed over the substrate;
first and second electrical devices mounted to a first surface of the IPD structure;
an encapsulant deposited over the first and second electrical devices and IPD structure;
a shielding layer formed over the encapsulant and electrically connected to a conductive channel in the IPD structure to isolate the first and second electrical devices from interference; and
an interconnect structure formed over a second surface of the IPD structure opposite the first surface of the IPD structure, the interconnect structure being electrically connected to the first and second electrical devices and IPD structure.
2. The semiconductor device of claim 1 , further including a third electrical device mounted to the second surface of the IPD structure.
3. The semiconductor device of claim 2 , wherein the first, second, and third electrical devices are electrically connected to conductive channels in the IPD structure.
4. The semiconductor device of claim 2 , further including a shielding cage formed over the third electrical device.
5. The semiconductor device of claim 1 , wherein the conductive channel is electrically connected to ground potential.
6. The semiconductor device of claim 1 , further including a recess formed in the encapsulant material between the first and second electrical devices, wherein the shielding layer is formed over the encapsulant and extends into the recess.
7. The semiconductor device of claim 1 , further including a shielding cage formed over the first electrical device.
8. A semiconductor device, comprising:
an integrated passive device (IPD) structure;
a first electrical device mounted to a first surface of the IPD structure;
an encapsulant deposited over the first electrical device and IPD structure; and
a shielding layer formed over the encapsulant and electrically connected to a conductive channel in the IPD structure to isolate the first electrical device from interference.
9. The semiconductor device of claim 8 , further including an interconnect structure formed over a second surface of the IPD structure opposite the first surface of the IPD structure, the interconnect structure being electrically connected to the first electrical device and IPD structure.
10. The semiconductor device of claim 9 , further including a second electrical device mounted to the second surface of the IPD structure.
11. The semiconductor device of claim 10 , wherein the first and second electrical devices are electrically connected to conductive channels in the IPD structure.
12. The semiconductor device of claim 10 , further including a shielding cage formed over the second electrical device.
13. The semiconductor device of claim 8 , wherein the conductive channel is electrically connected to ground potential.
14. The semiconductor device of claim 8 , further including:
a second electrical device mounted to the first surface of the IPD structure; and
a recess formed in the encapsulant between the first and second electrical devices, wherein the shielding layer is formed over the encapsulant and extends into the recess.
15. The semiconductor device of claim 8 , further including a shielding cage formed over the first electrical device.
16. A semiconductor device, comprising:
an integrated passive device (IPD) structure;
a first electrical device mounted to a first surface of the IPD structure;
an encapsulant deposited over the first electrical device and IPD structure;
a shielding layer formed over the encapsulant; and
an interconnect structure formed over a second surface of the IPD structure opposite the first surface of the IPD structure, the interconnect structure being electrically connected to the first electrical device and IPD structure, the shielding layer being electrically connected to a conductive channel in the IPD structure to isolate the first electrical device from interference.
17. The semiconductor device of claim 16 , wherein the conductive channel is electrically connected to ground potential.
18. The semiconductor device of claim 16 , further including:
a second electrical device mounted to the first surface of the IPD structure; and
a recess formed in encapsulant between the first and second electrical devices, wherein the shielding layer is formed over the encapsulant and extends into the recess.
19. The semiconductor device of claim 16 , further including a shielding cage formed over the first electrical device.
20. A semiconductor device, comprising:
a substrate;
a circuit structure formed over the substrate;
a first electrical device mounted to a first surface of the circuit structure;
an encapsulant deposited over the first electrical device and circuit structure;
a shielding layer formed over the encapsulant; and
an interconnect structure formed over a second surface of the circuit structure opposite the first surface of the circuit structure, the interconnect structure being electrically connected to the first electrical device and circuit structure, the shielding layer being electrically connected to a conductive channel in the circuit structure to isolate the first electrical device from interference.
21. The semiconductor device of claim 20 , wherein the circuit structure includes an integrated passive device (IPD).
22. The semiconductor device of claim 20 , wherein the conductive channel is electrically connected to ground potential.
23. The semiconductor device of claim 20 , further including:
a second electrical device mounted to the first surface of the circuit structure; and
a recess formed in encapsulant material between the first and second electrical devices, wherein the shielding layer is formed over the encapsulant and extends into the recess.
24. The semiconductor device of claim 20 , further including a shielding cage formed over the first electrical device.
25. The semiconductor device of claim 20 , further including a second electrical device mounted to the second surface of the circuit structure, wherein the first and second electrical devices are electrically connected to conductive channels in the circuit structure.