Semiconductor device and method of forming vertical interconnect in FO-WLCSP using leadframe disposed between semiconductor die
A semiconductor device has a plurality of semiconductor die or components mounted over a carrier. A leadframe is mounted over the carrier between the semiconductor die. The leadframe has a plate and bodies extending from the plate. The bodies of the leadframe are disposed around a perimeter of the semiconductor die. An encapsulant is deposited over the carrier, leadframe, and semiconductor die. A plurality of conductive vias is formed through the encapsulant and electrically connected to the bodies of the leadframe and contact pads on the semiconductor die. An interconnect structure is formed over the encapsulant and electrically connected to the conductive vias. A first channel is formed through the interconnect structure, encapsulant, leadframe, and partially through the carrier. The carrier is removed to singulate the semiconductor die. A second channel is formed through the plate of the leadframe to physically separate the bodies of the leadframe.
1. A method of making a semiconductor device, comprising:
providing a temporary carrier;
mounting a plurality of semiconductor die or components over the temporary carrier;
mounting a prefabricated leadframe over the temporary carrier between the semiconductor die or components, the leadframe including a plate and bodies extending from the plate;
depositing an encapsulant over the temporary carrier, leadframe, and semiconductor die or components;
forming a plurality of conductive vias through the encapsulant and electrically connected to the bodies of the leadframe and contact pads on the semiconductor die or components;
forming an interconnect structure over the encapsulant and electrically connected to the conductive vias;
forming a first channel through the interconnect structure, encapsulant, leadframe, and partially through the temporary carrier; and
removing the temporary carrier to singulate the semiconductor die or components.
2. The method of claim 1 , further including forming a second channel through the plate of the leadframe to physically separate the bodies of the leadframe.
3. The method of claim 1 , wherein the bodies of the leadframe are disposed around a perimeter of each semiconductor die or component.
4. The method of claim 1 , further including stacking a plurality of semiconductor die or components within the semiconductor device.
5. The method of claim 1 , further including removing the temporary carrier and the plate of the leadframe to singulate the semiconductor die or components.
6. A method of making a semiconductor device, comprising:
providing a first carrier;
mounting a semiconductor die or component over the first carrier;
mounting a leadframe over the first carrier adjacent to the semiconductor die or component, the leadframe including a plate and bodies extending from the plate;
depositing an encapsulant over the first carrier, leadframe, and semiconductor die or component;
forming a plurality of conductive vias through the encapsulant and electrically connected to the bodies of the leadframe and contact pads on the semiconductor die or component; and
forming a first interconnect structure over a first surface of the encapsulant and electrically connected to the conductive vias.
7. The method of claim 6 , further including:
forming a channel through the first interconnect structure, encapsulant, leadframe, and partially through the first carrier; and
removing the first carrier to singulate the semiconductor die or component.
8. The method of claim 6 , further including forming a channel through the plate of the leadframe to physically separate the bodies of the leadframe.
9. The method of claim 6 , wherein the bodies of the leadframe are disposed around a perimeter of the semiconductor die or component.
10. The method of claim 6 , further including:
providing a second carrier;
leading with the first interconnect structure, mounting the semiconductor die or component to the second carrier;
removing the first carrier; and
forming a second interconnect structure over a second surface of the encapsulant opposite the first surface of the encapsulant.
11. The method of claim 10 , further including:
forming a channel through the second interconnect structure, encapsulant, leadframe, and partially through the second carrier; and
removing the second carrier to singulate the semiconductor die or component.
12. The method of claim 6 , further including stacking a plurality of semiconductor die or components within the semiconductor device.
13. The method of claim 6 , wherein the bodies of the leadframe are disposed around a perimeter of the semiconductor die or component.
14. A method of making a semiconductor device, comprising:
providing a first semiconductor die or component;
disposing a first leadframe around the first semiconductor die or component, the first leadframe including a plate and bodies extending from the plate;
depositing a first encapsulant over the first leadframe and first semiconductor die or component; and
forming a first interconnect structure over the first encapsulant and electrically connected to the first leadframe and first semiconductor die or component.
15. The method of claim 14 , wherein forming the first interconnect structure includes:
forming a plurality of conductive vias through the first encapsulant and electrically connected to the bodies of the first leadframe and contact pads on the first semiconductor die or component;
forming a conductive layer over the first encapsulant; and
forming an insulating layer over the conductive layer.
16. The method of claim 14 , further including:
providing a second semiconductor die or component;
disposing a second leadframe around the second semiconductor die or component, the second leadframe having a plate and bodies extending from the plate;
depositing a second encapsulant over the second leadframe and second semiconductor die or component;
forming a second interconnect structure over the second encapsulant and electrically connected to the second leadframe and second semiconductor die or component;
mounting the second semiconductor die or component to the first semiconductor die or component; and
electrically connecting the second leadframe to the first leadframe.
17. The method of claim 16 , further including forming a channel through the first interconnect structure, first and second encapsulants, and first and second leadframes.
18. The method of claim 16 , further including:
forming a first channel through the plate of the first leadframe to physically separate the bodies of the first leadframe; and
forming a second channel through the plate of the second leadframe to physically separate the bodies of the second leadframe.
19. The method of claim 16 , wherein the bodies of the first leadframe are disposed around a perimeter of the first semiconductor die or component and the bodies of the second leadframe are disposed around a perimeter of the second semiconductor die or component.