Semiconductor device and method of forming FO-WLCSP with discrete semiconductor components mounted under and over semiconductor die

1. A method of making a semiconductor device, comprising:

providing a carrier;

forming a plurality of wettable contact pads over the carrier;

mounting a plurality of first discrete semiconductor components over the wettable contact pads;

mounting a plurality of second discrete semiconductor components over the wettable contact pads;

forming a plurality of conductive pillars over the wettable contact pads;

mounting a semiconductor die to the conductive pillars over the first discrete semiconductor components with the second discrete semiconductor components disposed outside a footprint of the semiconductor die;

depositing an encapsulant over the semiconductor die and first and second discrete semiconductor components;

removing a portion of a back surface of the semiconductor die opposite the conductive pillars;

removing the carrier; and

forming a first interconnect structure over the encapsulant and semiconductor die.

2. The method of claim 1 , wherein the wettable contact pads reduce shifting of the semiconductor die and first and second discrete semiconductor components during encapsulation.

3. The method of claim 1 , further including mounting a plurality of third discrete semiconductor components over the semiconductor die prior to depositing the encapsulant.

4. The method of claim 1 , further including depositing an insulating material over the first discrete semiconductor components prior to mounting the semiconductor die.

5. The method of claim 1 , further including forming a second interconnect structure over the first discrete semiconductor components for electrical connection to the semiconductor die.

6. The method of claim 1 , further including forming a plurality of conductive vias through the semiconductor die.

7. A method of making a semiconductor device, comprising:

providing a carrier;

mounting a first discrete semiconductor component over the carrier;

forming a first interconnect structure over the carrier;

mounting a semiconductor die to the first interconnect structure over the first discrete semiconductor component;

depositing an encapsulant over the semiconductor die and first discrete semiconductor component;

removing a portion of a back surface of the semiconductor die opposite the first interconnect structure;

removing the carrier; and

forming a second interconnect structure over the encapsulant and semiconductor die.

8. The method of claim 7 , further including mounting a second discrete semiconductor component over the carrier outside a footprint of the semiconductor die.

9. The method of claim 7 , further including forming a plurality of wettable contact pads over the carrier prior to mounting the first discrete semiconductor component and forming the first interconnect structure.

10. The method of claim 7 , wherein the first interconnect structure includes conductive pillars or stacked bumps.

11. The method of claim 7 , wherein the first interconnect structure includes bumps.

12. The method of claim 7 , further including forming a shielding layer between the first discrete semiconductor component and semiconductor die.

13. The method of claim 7 , further including mounting a third discrete semiconductor component over the semiconductor die.

14. A method of making a semiconductor device, comprising:

providing a carrier;

mounting a first discrete semiconductor component over the carrier;

mounting a semiconductor die to the carrier with the first discrete semiconductor component disposed outside a footprint of the semiconductor die;

removing a portion of a back surface of the semiconductor die;

mounting a second discrete semiconductor component over the semiconductor die;

depositing an encapsulant over the semiconductor die and first and second discrete semiconductor components;

removing the carrier; and

forming an interconnect structure over the encapsulant and semiconductor die.

15. The method of claim 14 , further including forming a plurality of wettable contact pads over the carrier prior to mounting the first discrete semiconductor component and semiconductor die.

16. The method of claim 14 , further including forming an insulating layer over the semiconductor die.

17. The method of claim 14 , further including forming a plurality of wettable contact pads over the semiconductor die.

18. The method of claim 14 , further including forming a plurality of conductive vias through the semiconductor die, the conductive vias being electrically connected to the second discrete semiconductor component.

19. The method of claim 14 , further including depositing an underfill material under the semiconductor die.

20. The method of claim 14 , further including mounting a third discrete semiconductor component under the semiconductor die.

21. A method of making a semiconductor device, comprising:

providing a carrier including a designated area;

mounting a first discrete semiconductor component over the carrier and within a footprint of the designated area of the carrier;

mounting a semiconductor die over the carrier and within the footprint of the designated area of the carrier;

removing a portion of a back surface of the semiconductor die;

depositing an encapsulant over the semiconductor die and first discrete semiconductor components;

removing the carrier; and

forming an interconnect structure over the encapsulant and semiconductor die.

22. The method of claim 21 , further including mounting a second discrete semiconductor component over the carrier and outside the footprint of the designated area of the carrier.

23. The method of claim 21 , further including forming a plurality of wettable contact pads over the carrier.

24. The method of claim 21 , further including forming a conductive pillar or bump over the carrier and within the footprint of the designated area of the carrier.

25. The method of claim 21 , further including:

the semiconductor die comprising a conductive via formed through the semiconductor die;

forming a conductive layer over and electrically connected to the conductive via of the semiconductor die; and

mounting the first discrete semiconductor component to the conductive layer.