Semiconductor device and method of forming TSV semiconductor wafer with embedded semiconductor die
View Patent ↗A semiconductor device has a TSV semiconductor wafer with a cavity formed in a first surface of the wafer. A second cavity can be formed in a second surface of the wafer. A plurality of semiconductor die is mounted within the cavities. The semiconductor die can be mounted side-by-side and/or stacked within the cavity. Conductive TSV can be formed through the die. An encapsulant is deposited within the cavity over the die. A CTE of the die is similar to a CTE of the encapsulant. A first interconnect structure is formed over a first surface of the encapsulant and wafer. A second interconnect structure is formed over a second surface of the encapsulant and wafer. The first and second interconnect structure are electrically connected to the TSV wafer. A second semiconductor die can be mounted over the first interconnect structure with encapsulant deposited over the second die.
1. A method of making a semiconductor device, comprising:
providing a semiconductor wafer including a plurality of conductive vias formed through the semiconductor wafer;
forming a cavity in the semiconductor wafer between the conductive vias;
disposing a plurality of semiconductor die within the cavity of the semiconductor wafer;
depositing an encapsulant within the cavity over the semiconductor die;
forming a first interconnect structure over a first surface of the semiconductor wafer; and
forming a second interconnect structure over a second surface of the semiconductor wafer opposite the first surface, the first and second interconnect structures being electrically connected to the conductive vias.
2. The method of claim 1 , wherein a coefficient of thermal expansion of the semiconductor wafer is similar to a coefficient of thermal expansion of the encapsulant.
3. The method of claim 1 , wherein a coefficient of thermal expansion of the semiconductor die is similar to a coefficient of thermal expansion of the encapsulant.
4. The method of claim 1 , further including disposing the semiconductor die in a stacked arrangement.
5. The method of claim 4 , further including disposing bumps between the stacked semiconductor die.
6. The method of claim 1 , further including disposing the semiconductor die in a side-by-side arrangement within the cavity of the semiconductor wafer.
7. The method of claim 1 , further including:
stacking a plurality of the semiconductor devices; and
electrically connecting the stacked semiconductor devices through the first and second interconnect structures and conductive vias.
8. A method of making a semiconductor device, comprising:
providing a semiconductor wafer;
forming a first cavity in a first surface of the semiconductor wafer;
disposing a first semiconductor die within the first cavity of the semiconductor wafer;
depositing a first encapsulant within the first cavity;
forming a first interconnect structure over the first surface of the semiconductor wafer; and
forming a second interconnect structure over a second surface of the semiconductor wafer opposite the first surface of the semiconductor wafer.
9. The method of claim 8 , further including forming a plurality of conductive vias through the semiconductor wafer.
10. The method of claim 8 , wherein a coefficient of thermal expansion of the semiconductor wafer and coefficient of thermal expansion of the first semiconductor die are similar to a coefficient of thermal expansion of the first encapsulant.
11. The method of claim 8 , further including:
forming a second cavity in the second surface of the semiconductor wafer opposite the first surface of the semiconductor wafer;
disposing a second semiconductor die within the second cavity of the semiconductor wafer; and
depositing a second encapsulant within the second cavity.
12. The method of claim 8 , further including forming a plurality of conductive vias through the first semiconductor die.
13. The method of claim 8 , further including:
disposing a second semiconductor die over the first interconnect structure; and
depositing a second encapsulant over the second semiconductor die and first interconnect structure.
14. A method of making a semiconductor device, comprising:
providing a substrate including a plurality of first conductive vias formed through the substrate;
forming a first cavity in a first surface of the substrate;
disposing a first semiconductor die within the first cavity of the substrate;
depositing a first encapsulant within the first cavity; and
forming a first interconnect structure over the first surface of the substrate, the first interconnect structure being electrically connected to the first conductive vias.
15. The method of claim 14 , further including forming a second interconnect structure over a second surface of the substrate opposite the first surface of the substrate, the second interconnect structure being electrically connected to the first conductive vias.
16. The method of claim 14 , wherein a coefficient of thermal expansion of the substrate and coefficient of thermal expansion of the first semiconductor die are similar to a coefficient of thermal expansion of the first encapsulant.
17. The method of claim 14 , further including:
forming a second cavity in a second surface of the substrate opposite the first surface of the substrate;
disposing a second semiconductor die within the second cavity of the substrate; and
depositing a second encapsulant within the second cavity over the second semiconductor die.
18. The method of claim 14 , further including forming a plurality of second conductive vias through the first semiconductor die.
19. The method of claim 14 , further including disposing a second semiconductor die over the first semiconductor die.
20. The method of claim 14 , further including:
disposing a second semiconductor die over the first interconnect structure; and
depositing a second encapsulant over the second semiconductor die and first interconnect structure.