INTEGRATED CIRCUIT PACKAGING SYSTEM USING B-STAGE POLYMER AND METHOD OF MANUFACTURE THEREOF

1 . A method of manufacture of an integrated circuit packaging system comprising:

providing a substrate having a bond pad;

depositing a B-stage polymer, having a dispersion of conductive particles therein, on the bond pad;

inserting a bond ball into the B-stage polymer; and

forming intermetallic structures between the bond ball and the bond pad.

2 . The method as claimed in claim 1 wherein depositing the B-stage polymer deposits an ultraviolet light or heat curable polymer.

3 . The method as claimed in claim 1 wherein depositing the B-stage polymer having a dispersion of conductive particles deposits anisotropic conductive particles.

4 . The method as claimed in claim 1 wherein:

inserting the bond ball into the B-stage polymer occurs with the B-stage polymer in the B-stage thereof.

5 . The method as claimed in claim 1 further comprising:

bonding the bond ball to the bond pad and the forming of intermetallic structures occurs under heat and friction.

6 . A method of manufacture of an integrated circuit packaging system comprising:

providing a die having a bond pad;

depositing a B-stage adhesive, having a dispersion of conductive particles therein, on the bond pad;

inserting a bond ball into the B-stage adhesive in the B-stage; and

forming intermetallic structures between the bond ball and the bond pad from the conductive particles.

7 . The method as claimed in claim 6 wherein depositing the B-stage adhesive includes application of an ultra-violet radiation dosage of 0.7 J/cm 2 UVA or 0.5 J/cm 2 UAV or a thermal cure from about 45 to 60 minutes at 150° C.

8 . The method as claimed in claim 6 wherein depositing the B-stage adhesive having a dispersion of conductive particles uses coated beads.

9 . The method as claimed in claim 6 wherein:

inserting the bond ball into the B-stage adhesive occurs during wire bonding from the B-stage adhesive to a lead or in a reverse stitch stand-off bumping process.

10 . The method as claimed in claim 6 wherein:

forming of the intermetallic structures occurs under heat and ultrasonic bonding.

11 . An integrated circuit packaging system comprising:

a substrate having a bond pad;

a B-stage polymer, having a dispersion of conductive particles therein, on the bond pad; and

a bond ball inserted into the B-stage polymer for forming intermetallic structures between the bond ball and the bond pad.

12 . The system as claimed in claim 11 wherein the B-stage polymer is an ultraviolet light or heat curable polymer.

13 . The system as claimed in claim 11 wherein the B-stage polymer has a dispersion of conductive particles which are anisotropic conductive particles.

14 . The system as claimed in claim 11 wherein:

the bond ball is in the B-stage polymer in the B-stage thereof.

15 . The system as claimed in claim 11 wherein:

the intermetallic structures are formed over a low dielectric constant material.

16 . The system as claimed in claim 11 wherein:

the B-stage polymer is a B-stage adhesive in the B-stage; and

the intermetallic structures are formed from the conductive particles.

17 . The system as claimed in claim 16 wherein the B-stage adhesive is capable of transition into a B-stage by an ultra-violet radiation dosage of 0.7 J/cm 2 UVA or 0.5 J/cm 2 UAV or a thermal cure from about 45 to 60 minutes at 150° C.

18 . The system as claimed in claim 16 wherein the B-stage adhesive has a dispersion of conductive particles of coated beads.

19 . The system as claimed in claim 16 further comprising:

a bond wire between the B-stage adhesive on the bond pad and a lead.

20 . The system as claimed in claim 16 wherein:

the intermetallic structures are sandwiched between the bond ball and the bond pad.