Semiconductor device having embedded integrated passive devices electrically interconnected using conductive pillars

1. A semiconductor device, comprising:

a first insulating layer;

a first conductive layer disposed over an opening in the first insulating layer;

a plurality of conductive pillars disposed over the first conductive layer and electrically connected to the first conductive layer;

a prefabricated integrated passive device (IPD) disposed over the first conductive layer between the conductive pillars, the prefabricated IPD including a substrate and a first passive device formed over the substrate;

a discrete capacitor disposed over the first conductive layer and electrically connected to one of the conductive pillars;

an encapsulant disposed around the prefabricated IPD, discrete capacitor, and conductive pillars;

a second insulating layer formed in direct contact with the substrate of the prefabricated IPD, encapsulant, and conductive pillars opposite the first insulating layer and first conductive layer; and

a second conductive layer formed over the second insulating layer and contacting the conductive pillars.

2. The semiconductor device of claim 1 , further comprising a semiconductor component disposed over the second conductive layer and electrically connected to the conductive pillars.

3. The semiconductor device of claim 2 , wherein the semiconductor component includes a second passive device or digital circuit.

4. The semiconductor device of claim 1 , wherein the first conductive layer or second conductive layer includes an inductor.

5. The semiconductor device of claim 1 , further comprising an interconnect structure disposed over the first conductive layer and electrically connected to the first conductive layer and conductive pillars.

6. A semiconductor device, comprising:

a first conductive layer;

a plurality of conductive pillars disposed over the first conductive layer;

an integrated passive device (IPD) disposed over the first conductive layer between the conductive pillars, the IPD including a substrate and a passive device formed over the substrate;

a discrete capacitor disposed over the first conductive layer and electrically connected to one of the conductive pillars;

an encapsulant disposed around the IPD, discrete capacitor, and conductive pillars with a portion of the encapsulant over a surface of the IPD opposite the substrate of the IPD;

a first insulating layer formed in direct contact with the substrate of the IPD and encapsulant opposite the first conductive layer; and

a second conductive layer formed over the first insulating layer and contacting the conductive pillars.

7. The semiconductor device of claim 6 , further comprising a second insulating layer disposed over the second conductive layer and first insulating layer.

8. The semiconductor device of claim 6 , wherein the first conductive layer or second conductive layer includes an inductor.

9. The semiconductor device of claim 6 , further comprising a semiconductor component disposed over the second conductive layer and electrically connected to the conductive pillars.

10. The semiconductor device of claim 6 , further comprising an interconnect structure disposed over the first conductive layer and electrically connected to the conductive pillars.

11. The semiconductor device of claim 6 , wherein the passive device includes an inductor, metal-insulator-metal capacitor, or resistor formed over the substrate.

12. A semiconductor device, comprising:

an interconnect structure;

a plurality of conductive pillars disposed over the interconnect structure;

a discrete passive component disposed over the interconnect structure and electrically connected to one of the conductive pillars;

an integrated passive device (IPD) disposed over the interconnect structure between the conductive pillars, the IPD including a substrate and a passive device formed over the substrate;

an encapsulant disposed around the conductive pillars and between the IPD and interconnect structure;

a first insulating layer formed in direct contact with the substrate of the IPD and encapsulant opposite the interconnect structure; and

a first conductive layer formed over the first insulating layer and contacting the conductive pillars.

13. The semiconductor device of claim 12 , further comprising a semiconductor component disposed over the first conductive layer.

14. The semiconductor device of claim 12 , wherein the interconnect structure or first conductive layer includes an inductor.

15. The semiconductor device of claim 12 , wherein the passive device includes a resistor, inductor, or metal-insulator-metal capacitor formed over the substrate.

16. The semiconductor device of claim 12 , wherein the first conductive layer reduces electromagnetic interference with respect to the IPD.

17. A semiconductor device, comprising:

a first interconnect structure;

a plurality of conductive pillars disposed over the first interconnect structure;

an integrated passive device (IPD) disposed over the first interconnect structure between the conductive pillars, the IPD including a substrate and a passive device formed over the substrate;

a discrete passive component disposed over the first interconnect structure and electrically connected to one of the conductive pillars;

an encapsulant disposed over and around the IPD and around the conductive pillars; and

a second interconnect structure formed in direct contact with the substrate of the IPD and encapsulant opposite the first interconnect structure.

18. The semiconductor device of claim 17 , further comprising a semiconductor component disposed over the second interconnect structure.

19. The semiconductor device of claim 17 , wherein the first interconnect structure or second interconnect structure includes an inductor.

20. The semiconductor device of claim 17 , further comprising stacked semiconductor devices that are electrically interconnected through the conductive pillars.

21. The semiconductor device of claim 17 , wherein the passive device includes a resistor, inductor, or metal-insulator-metal capacitor formed over the substrate.

22. A semiconductor device, comprising:

a first interconnect structure;

a plurality of conductive pillars disposed over the first interconnect structure;

an integrated passive device (IPD) disposed between the conductive pillars, the IPD including a substrate and a passive device formed over the substrate;

a discrete passive component disposed adjacent to the IPD;

an encapsulant disposed around the conductive pillars and between the IPD and interconnect structure; and

a second interconnect structure formed in direct contact with the substrate of the IPD and encapsulant opposite the first interconnect structure.

23. The semiconductor device of claim 22 , further comprising a semiconductor component disposed over the second interconnect structure.

24. The semiconductor device of claim 22 , wherein the IPD is electrically connected to the first interconnect structure and second interconnect structure.

25. The semiconductor device of claim 22 , wherein the first interconnect structure or second interconnect structure includes an inductor.