Semiconductor device and method of forming a thermally reinforced semiconductor die
A semiconductor device includes a substrate with conductive traces. A semiconductor die is mounted with an active surface oriented toward the substrate. An underfill material is deposited between the semiconductor die and substrate. A recess is formed in an interior portion of the semiconductor die that extends from a back surface of the semiconductor die opposite the active surface partially through the semiconductor die such that a peripheral portion of the back surface of the semiconductor die is offset with respect to a depth of the recess. A thermal interface material (TIM) is deposited over the semiconductor die and into the recess such that the TIM in the recess is laterally supported by the peripheral portion of the semiconductor die to reduce flow of the TIM away from the semiconductor die. A heat spreader including protrusions is mounted over the semiconductor die and contacts the TIM.
1. A semiconductor device, comprising:
a substrate;
a semiconductor die disposed over the substrate with an active surface of the semiconductor die oriented toward the substrate;
a thermal interface material (TIM) deposited over a backside of the semiconductor die opposite the active surface including a portion of the TIM disposed between the active surface and backside of the semiconductor die with a portion of the backside of the semiconductor die devoid of the TIM; and
a heat spreader disposed over the semiconductor die, contacting the TIM, and connected to the substrate with a peripheral portion of the semiconductor die restricting movement of the TIM from an interface between the semiconductor die and heat spreader.
2. The semiconductor device of claim 1 , further including protrusions that extend from the heat spreader and over a side portion of the TIM.
3. The semiconductor device of claim 1 , further including a recess formed in an interior portion of the semiconductor die.
4. The semiconductor device of claim 3 , wherein the recess includes a square, rectangular, or triangular cross section.
5. A semiconductor device, comprising:
a substrate;
a semiconductor die disposed with a first surface oriented toward the substrate and a recess formed in an interior portion of the semiconductor die extending from a second surface of the semiconductor die opposite the first surface partially through the semiconductor die;
a thermal interface material (TIM) deposited over the semiconductor die and into the recess such that the TIM in the recess is surrounded by a peripheral portion of the semiconductor die to reduce flow of the TIM away from the semiconductor die; and
a heat spreader disposed over the semiconductor die, contacting the TIM, and connected to the substrate with a region between the second surface of the semiconductor die and the heat spreader being devoid of the TIM.
6. The semiconductor device of claim 5 , wherein protrusions extend from the heat spreader to within the recess and surrounding a perimeter of the TIM to reduce flow of the TIM away from the semiconductor die.
7. The semiconductor device of claim 5 , wherein protrusions extend from the heat spreader to contact a sidewall of the semiconductor die outside the recess and surrounding a perimeter of the TIM to reduce flow of the TIM away from the semiconductor die.
8. The semiconductor device of claim 5 , wherein the TIM includes thermal grease.
9. The semiconductor device of claim 5 , wherein the recess in the interior portion of the semiconductor die includes a square, rectangular, or triangular cross section.
10. A semiconductor device, comprising:
a substrate;
a semiconductor die disposed over the substrate including a first surface oriented toward the substrate;
a thermal interface material (TIM) deposited over a second surface of the semiconductor die opposite the first surface and into a recess of the semiconductor die; and
a heat spreader disposed over the semiconductor die, contacting the TIM, and connected to the substrate with a peripheral portion of the semiconductor die and the recess restricting movement of the TIM from an interface between the second surface of the semiconductor die and heat spreader.
11. The semiconductor device of claim 10 , further including a plurality of recesses formed over the second surface of the semiconductor die as rectangular channels or trenches substantially parallel with respect to a sidewall of the semiconductor die and with respect to each other.
12. The semiconductor device of claim 10 , further including an interconnect structure formed in the substrate.
13. The semiconductor device of claim 10 , wherein the TIM includes thermal grease.
14. The semiconductor device of claim 10 , wherein the recess includes a square, rectangular, or triangular cross section.
15. A semiconductor device, comprising:
a semiconductor die;
a thermal interface material (TIM) deposited into a recess of the semiconductor die; and
a heat spreader disposed over the semiconductor die contacting the TIM with the recess restricting movement of the TIM from an interface between the semiconductor die and heat spreader.
16. The semiconductor device of claim 15 , further including a passive device disposed adjacent to the semiconductor die.
17. The semiconductor device of claim 15 , further including a substrate connected to the heat spreader.
18. The semiconductor device of claim 15 , wherein the recess includes a square, rectangular, or triangular cross section.
19. The semiconductor device of claim 15 , further including protrusions extending from the heat spreader and over the recess of the semiconductor die.