Semiconductor device and method of forming TSV interposer with semiconductor die and build-up interconnect structure on opposing surfaces of the interposer
A semiconductor device has a substrate with first and second opposing surfaces. A plurality of conductive vias is formed partially through the first surface of the substrate. A first conductive layer is formed over the first surface of the substrate electrically connected to the conductive vias. A first semiconductor die is mounted over the first surface of the substrate. The first semiconductor die and substrate are mounted to a carrier. An encapsulant is deposited over the first semiconductor die, substrate, and carrier. A portion of the second surface of the substrate is removed to expose the conductive vias. An interconnect structure is formed over a surface of the substrate opposite the first semiconductor die. A second semiconductor die can be stacked over the first semiconductor die. A second semiconductor die can be mounted over the first surface of the substrate adjacent to the first semiconductor die.
1. A method of making a semiconductor device, comprising:
providing a substrate including first and second opposing surfaces;
forming a plurality of vias partially through the first surface of the substrate;
completely filling the plurality of vias with a conductive material to form a plurality of conductive vias;
forming a conductive layer over the first surface of the substrate electrically connected to the conductive vias;
disposing an insulating layer around the conductive layer to completely cover side surfaces of the conductive layer;
disposing a first semiconductor die over the first surface of the substrate electrically connected to the conductive layer;
depositing an encapsulant over the first semiconductor die and substrate including a side surface of the substrate;
removing a portion of the second surface of the substrate to expose the conductive vias coplanar with the second surface of the substrate after disposing the first semiconductor die over the substrate;
forming a redistribution layer over the encapsulant and substrate opposite the first semiconductor die and electrically connected to the first semiconductor die; and
forming a conductive via through the encapsulant and electrically connected to the redistribution layer.
2. The method of claim 1 , further including:
forming the insulating layer prior to disposing the first semiconductor die over the first surface of the substrate; and
forming a plurality of bumps over the conductive layer.
3. The method of claim 1 , further including depositing an underfill material beneath the first semiconductor die.
4. The method of claim 1 , further including disposing a second semiconductor die over the first semiconductor die.
5. The method of claim 1 , further including disposing a plurality of second semiconductor die over the first semiconductor die.
6. The method of claim 1 , further including disposing a second semiconductor die over the first surface of the substrate adjacent to the first semiconductor die.
7. The method of claim 1 , further including forming an interconnect structure over the second surface of the substrate.
8. A method of making a semiconductor device, comprising:
providing a substrate;
forming a first conductive via within the substrate;
forming a conductive layer, including a redistribution layer and a second conductive via, over the first conductive via;
forming an insulating layer over the substrate after forming the redistribution layer and second conductive via;
disposing a first semiconductor die over the substrate;
disposing an encapsulant over the semiconductor die and substrate including a side surface of the substrate;
removing a portion of the substrate to expose the first conductive via; and
forming a build-up interconnect structure over the exposed first conductive via, encapsulant, and first semiconductor die.
9. The method of claim 8 , further including forming the first conductive via partially through a first surface of the substrate.
10. The method of claim 8 , further including forming an interconnect structure over the substrate opposite the first semiconductor die.
11. The method of claim 8 , further including disposing a second semiconductor die over the first semiconductor die.
12. The method of claim 8 , further including forming a third conductive via through the first semiconductor die.
13. The method of claim 8 , further including disposing a second semiconductor die including a memory circuit over the first semiconductor die.
14. The method of claim 8 , further including disposing a second semiconductor die over a first surface of the substrate adjacent to the first semiconductor die.