Semiconductor device with conductive vias between saw streets
View Patent ↗A semiconductor device is made by disposing a plurality of semiconductor die on a carrier and creating a gap between each of the semiconductor die. A first insulating material is deposited in the gap. A portion of the first insulating material is removed. A conductive layer is formed over the semiconductor die. A conductive lining is conformally formed on the remaining portion of the first insulating material to form conductive via within the gap. The conductive vias can be tapered or vertical. The conductive via is electrically connected to a contact pad on the semiconductor die. A second insulating material is deposited in the gap over the conductive lining. A portion of the conductive via may extend outside the first and second insulating materials. The semiconductor die are singulated through the gap. The semiconductor die can be stacked and interconnected through the conductive vias.
1. A semiconductor device, comprising:
a plurality of semiconductor die separated by a peripheral region that extends between the semiconductor die;
a first insulating material deposited around the peripheral region of the semiconductor die to extend from a first surface of the semiconductor die to a second surface of the semiconductor die opposite the first surface;
a first conductive layer formed over the first insulating material;
a second insulating material deposited in the peripheral region over the first conductive layer to form a conductive via disposed between the first and second insulating materials; and
a second conductive layer formed over the semiconductor die and electrically connected between a contact pad on the semiconductor die and the first conductive layer.
2. The semiconductor device of claim 1 , wherein the conductive via is tapered or vertical.
3. The semiconductor device of claim 1 , wherein a portion of the conductive via extends outside the first and second insulating materials.
4. The semiconductor device of claim 1 , further including a recess formed in the second insulating material.
5. The semiconductor device of claim 1 , further including a plurality of rows of the conductive vias formed in the peripheral region between the first and second insulating materials.
6. The semiconductor device of claim 1 , further including a plurality of stacked semiconductor die electrically connected through the conductive via.
7. A semiconductor device, comprising:
a semiconductor die;
a first insulating material deposited around the semiconductor die;
a via formed through the first insulating material;
a first conductive layer formed over the first insulating material;
a second insulating material deposited over the first conductive layer and within the via including a first portion of the first conductive layer coplanar with the second insulating material; and
a second conductive layer formed over the semiconductor die and electrically connected between a contact pad on the semiconductor die and the first conductive layer.
8. The semiconductor device of claim 7 , wherein the first conductive layer includes vertical and lateral components with the vertical component disposed over the first insulating material.
9. The semiconductor device of claim 7 , wherein the first conductive layer is tapered or vertical.
10. The semiconductor device of claim 7 , wherein a second portion of the first conductive layer extends outside the first and second insulating materials.
11. The semiconductor device of claim 7 , further including a recess formed in the second insulating material.
12. The semiconductor device of claim 7 , further including a plurality of rows of the first conductive layer formed between the first and second insulating materials.
13. The semiconductor device of claim 7 , further including a plurality of stacked semiconductor die electrically connecting through the first conductive layer.
14. A semiconductor device, comprising:
a semiconductor die;
a first insulating material deposited around the semiconductor die;
a via formed through the first insulating material;
a first conductive layer formed over the first insulating material; and
a second insulating material deposited over the first conductive layer and in the via.
15. The semiconductor device of claim 14 , further including a second conductive layer formed over the semiconductor die and electrically connected between a contact pad on the semiconductor die and the first conductive layer.
16. The semiconductor device of claim 14 , wherein a portion of the first conductive layer extends outside the first and second insulating materials.
17. The semiconductor device of claim 14 , further including a recess formed in the second insulating material.
18. The semiconductor device of claim 14 , further including a plurality of rows of the first conductive layer formed between the first and second insulating materials.
19. The semiconductor device of claim 14 , further including a plurality of stacked semiconductor die electrically connected through the first conductive layer.