Semiconductor device and method of forming IPD on molded substrate
A semiconductor device is made by depositing an encapsulant material between first and second plates of a chase mold to form a molded substrate. A first conductive layer is formed over the molded substrate. A resistive layer is formed over the first conductive layer. A first insulating layer is formed over the resistive layer. A second insulating layer is formed over the first insulating layer, resistive layer, first conductive layer, and molded substrate. A second conductive layer is formed over the first insulating layer, resistive layer, and first conductive layer. A third insulating layer is formed over the second insulating layer and second conductive layer. A bump is formed over the second conductive layer. The first conductive layer, resistive layer, first insulating layer, and second conductive layer constitute a MIM capacitor. The second conductive layer is wound to exhibit inductive properties.
1. A method of making a semiconductor device, comprising:
disposing a first conductive layer in a mold;
forming a substrate by curing a molding compound in the mold over the first conductive layer;
forming a first insulating layer over the first conductive layer;
forming a second conductive layer over the first insulating layer to form a capacitor with the first conductive layer; and
forming an interconnect structure electrically connected to the second conductive layer.
2. The method of claim 1 , further including forming a resistive layer over the first conductive layer.
3. The method of claim 1 , wherein forming the interconnect structure includes forming a bump or bond wire electrically connected to the capacitor.
4. The method of claim 1 , further including depositing the molding compound between a first plate and second plate of the mold.
5. The method of claim 4 , further including:
applying a first releasable layer over the first plate; and
applying a second releasable layer over the second plate.
6. The method of claim 1 , further including forming a third conductive layer over the substrate and wound to exhibit inductive properties.
7. A method of making a semiconductor device, comprising:
disposing a second conductive layer in a mold;
forming a molded substrate by curing an encapsulant in the mold over the second conductive layer;
forming a first insulating layer over the molded substrate and second conductive layer;
forming a first conductive layer over the first insulating layer and wound to exhibit inductive properties; and
forming an interconnect structure over the first conductive layer opposite the molded substrate with the interconnect structure electrically connected to the first conductive layer.
8. The method of claim 7 , further including:
forming a second insulating layer over the second conductive layer; and
forming a third conductive layer over the second insulating layer and second conductive layer as a capacitor.
9. The method of claim 8 , further including forming a resistive layer over the second conductive layer.
10. The method of claim 8 , wherein a coefficient of thermal expansion of the molded substrate is similar to a coefficient of thermal expansion of the first conductive layer.
11. The method of claim 7 , wherein the interconnect structure includes a bump or bond wire.
12. The method of claim 7 , wherein forming the molded substrate includes:
providing the mold to include a first plate and a second plate;
forming a first releasable layer over the first plate;
forming a second releasable layer over the second plate;
forming the second conductive layer on the second releasable layer; and
depositing the encapsulant between the first plate and second plate of the mold.
13. A method of making a semiconductor device, comprising:
disposing a first conductive layer in a mold;
forming a substrate by curing a molding compound in the mold over the first conductive layer;
forming an integrated passive device (IPD) over the substrate after forming the substrate in the mold; and
forming an interconnect structure over the IPD.
14. The method of claim 13 , wherein forming the IPD includes forming a second conductive layer over the substrate and wound to exhibit inductive properties.
15. The method of claim 13 , wherein forming the IPD includes:
forming a first insulating layer over the first conductive layer; and
forming a second conductive layer over the first insulating layer and first conductive layer as a capacitor.
16. The method of claim 13 , further including forming a resistive layer over the first conductive layer.
17. The method of claim 13 , wherein a coefficient of thermal expansion of the substrate is similar to a coefficient of thermal expansion of the IPD.
18. The method of claim 13 , wherein the interconnect structure includes a bump or bond wire electrically connected to the IPD.
19. The method of claim 13 , wherein forming the substrate includes depositing an encapsulant between a first plate and second plate of the mold.
20. A semiconductor device, comprising:
a molded substrate;
a first conductive layer formed directly on the molded substrate and partially within a cavity of the molded substrate;
an integrated passive device (IPD) including the first conductive layer as a part of the IPD; and
an interconnect structure electrically connected to the IPD.
21. The semiconductor device of claim 20 , wherein the IPD further includes a second conductive layer formed over the molded substrate and wound to exhibit inductive properties.
22. The semiconductor device of claim 20 , wherein the IPD further includes:
a first insulating layer formed over the first conductive layer; and
a second conductive layer formed over the first insulating layer and first conductive layer as a capacitor.
23. The semiconductor device of claim 22 , further including a resistive layer formed over the first conductive layer.
24. The semiconductor device of claim 20 , further including:
a chase mold including a first plate and second plate; and
an encapsulant deposited between the first plate and second plate of the chase mold.