Semiconductor device and method of stacking semiconductor die in mold laser package interconnected by bumps and conductive vias
A semiconductor wafer contains a plurality of first semiconductor die. The semiconductor wafer is mounted to a carrier. A channel is formed through the semiconductor wafer to separate the first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. An encapsulant is deposited over the carrier and first semiconductor die and into the channel while a side portion and surface portion of the second semiconductor die remain exposed from the encapsulant. A first conductive via is formed through the encapsulant in the channel. A second conductive via is formed through the encapsulant over a contact pad of the first semiconductor die. A conductive layer is formed over the encapsulant between the first and second conductive vias. An insulating layer is formed over the conductive layer and encapsulant. The carrier is removed. An interconnect structure is formed over the first conductive via.
1. A semiconductor device, comprising:
a first semiconductor die;
a second semiconductor die disposed over the first semiconductor die with an active surface of the second semiconductor die oriented toward an active surface of the first semiconductor die;
a first interconnect structure formed between the active surface of the first semiconductor die and the active surface of the second semiconductor die;
an encapsulant deposited over and around the first semiconductor die and extending to the active surface of the second semiconductor die;
a first conductive via formed through the encapsulant; and
a second interconnect structure formed over a side surface of the second semiconductor die.
2. The semiconductor device of claim 1 , further including:
a second conductive via formed through the encapsulant;
a conductive layer formed over the encapsulant between the first conductive via and second conductive via; and
an insulating layer formed over the encapsulant and conductive layer.
3. The semiconductor device of claim 1 , wherein a side portion and surface portion of the second semiconductor die opposite the first semiconductor die remain exposed from the encapsulant.
4. The semiconductor device of claim 1 , further including a plurality of stacked semiconductor devices electrically connected through the first conductive via.
5. The semiconductor device of claim 1 , wherein the encapsulant covers the active surface of the second semiconductor die.
6. The semiconductor device of claim 1 , further including a third semiconductor die disposed over the second semiconductor die.
7. The device of claim 1 , further including a third semiconductor die including an active surface oriented toward the active surface of the second semiconductor die and a back surface of the first semiconductor die opposite the active surface of the first semiconductor die.
8. A semiconductor device, comprising:
a first semiconductor die;
a second semiconductor die disposed over the first semiconductor die with a first surface of the second semiconductor die oriented toward a first surface of the first semiconductor die;
an encapsulant deposited over and around the first semiconductor die; and
a first conductive via formed through the encapsulant, over the first semiconductor die, and outside a footprint of the second semiconductor die.
9. The semiconductor device of claim 8 , further including an interconnect structure formed between the first surface of the first semiconductor die and the first surface of the second semiconductor die.
10. The semiconductor device of claim 8 , further including:
a second conductive via formed through the encapsulant;
a conductive layer formed over the encapsulant between the first conductive via and second conductive via; and
an insulating layer formed over the encapsulant and conductive layer.
11. The semiconductor device of claim 8 , further including a heat spreader disposed over a second surface of the second semiconductor die.
12. The semiconductor device of claim 8 , further including an interconnect structure formed over a second surface of the first semiconductor die.
13. The semiconductor device of claim 8 , further including a plurality of stacked semiconductor devices electrically connected through the first conductive via.
14. The semiconductor device of claim 8 , further including:
a substrate disposed over a second surface of the second semiconductor die; and
a third semiconductor die disposed over the substrate.
15. The device of claim 8 , further including a third semiconductor die including a first surface oriented toward the first surface of the second semiconductor die and a second surface of the first semiconductor die.
16. A semiconductor device, comprising:
a first semiconductor die;
a second semiconductor die disposed over the first semiconductor die with a first surface of the second semiconductor die oriented toward a first surface of the first semiconductor die;
an encapsulant deposited over the first semiconductor die and extending to the first surface of the second semiconductor die, wherein a second surface of the second semiconductor die opposite the first surface of the second semiconductor die is devoid of the encapsulant; and
a conductive via formed in the encapsulant and extending to the first semiconductor die.
17. The semiconductor device of claim 16 , further including an interconnect structure formed between the first surface of the first semiconductor die and the first surface of the second semiconductor die.
18. The semiconductor device of claim 16 , further including:
a conductive layer formed over the encapsulant and electrically connected to the conductive via; and
an insulating layer formed over the encapsulant and conductive layer.
19. The semiconductor device of claim 16 , further including a heat spreader disposed over the second surface of the second semiconductor die.
20. The semiconductor device of claim 16 , further including an interconnect structure formed over the second surface of the first semiconductor die.
21. The semiconductor device of claim 16 , further including a plurality of stacked semiconductor devices electrically connected through the conductive via.
22. The semiconductor device of claim 16 , further including:
a substrate disposed over the second surface of the second semiconductor die; and
a third semiconductor die disposed over the substrate.
23. A semiconductor device, comprising:
a first semiconductor die;
a second semiconductor die disposed over the first semiconductor die with an active surface of the second semiconductor die oriented toward an active surface of the first semiconductor die;
an encapsulant deposited over and around the first semiconductor die; and
a first interconnect structure formed over the first semiconductor die and outside of a footprint of the second semiconductor die.
24. The semiconductor device of claim 23 , further including a conductive via formed through the encapsulant.
25. The semiconductor device of claim 24 , further including:
a conductive layer formed over the encapsulant and electrically connected to the conductive via; and
an insulating layer formed over the encapsulant and conductive layer.
26. The semiconductor device of claim 23 , further including a second interconnect structure formed between the active surface of the first semiconductor die and the active surface of the second semiconductor die.
27. The semiconductor device of claim 23 , further including a third semiconductor die disposed over the second semiconductor die.
28. A semiconductor device, comprising:
a first semiconductor die;
a second semiconductor die disposed over the first semiconductor die with an active surface of the second semiconductor die oriented toward the first semiconductor die;
a first interconnect structure formed between the first semiconductor die and second semiconductor die;
an encapsulant deposited over and around the first semiconductor die; and
a second interconnect structure formed over a side surface of the second semiconductor die.
29. The device of claim 28 , further including a third semiconductor die disposed over the second semiconductor die.
30. The device of claim 28 , further including a substrate disposed between the first and second semiconductor die.
31. The device of claim 28 , wherein the first interconnect structure includes bumps disposed between the first and second semiconductor die.