Semiconductor device and method of forming conductive posts embedded in photosensitive encapsulant
A semiconductor package includes a post carrier having a base plate and plurality of conductive posts. A photosensitive encapsulant is deposited over the base plate of the post carrier and around the conductive posts. The photosensitive encapsulant is etched to expose a portion of the base plate of the post carrier. A semiconductor die is mounted to the base plate of the post carrier within the etched portions of the photosensitive encapsulant. A second encapsulant is deposited over the semiconductor die. A first circuit build-up layer is formed over the second encapsulant. The first circuit build-up layer is electrically connected to the conductive posts. The base plate of the post carrier is removed and a second circuit build-up layer is formed over the semiconductor die and the photosensitive encapsulant opposite the first circuit build-up layer. The second circuit build-up layer is electrically connected to the conductive posts.
1. A method of making a semiconductor device, comprising:
providing a prefabricated substrate including a base plate and a plurality of conductive posts extending from the base plate;
disposing a photosensitive material over the base plate and around the conductive posts;
forming an opening in a first surface of the photosensitive material between the conductive posts; and
disposing a semiconductor die within the opening in the photosensitive material over the base plate of the prefabricated substrate.
2. The method of claim 1 , further including depositing an encapsulant over the semiconductor die within the opening in the photosensitive material.
3. The method of claim 1 , further including forming a first interconnect structure over the first surface of the photosensitive material.
4. The method of claim 3 , further including:
removing the base plate; and
forming a second interconnect structure over a second surface of the photosensitive material opposite the first surface of the photosensitive material.
5. The method of claim 1 , further including planarizing the photosensitive material to the semiconductor die.
6. The method of claim 1 , wherein the photosensitive material extends above the conductive posts.
7. A method of making a semiconductor device, comprising:
providing a copper substrate including a base plate and a plurality of conductive posts extending from the base plate;
disposing a first encapsulant over the base plate and around the conductive posts;
forming an opening in a surface of the first encapsulant between the conductive posts; and
disposing a semiconductor die within the opening in the first encapsulant over the base plate of the copper substrate.
8. The method of claim 7 , further including depositing a second encapsulant over the semiconductor die within the opening in the first encapsulant.
9. The method of claim 7 , further including forming a first interconnect structure over a first surface of the semiconductor die.
10. The method of claim 9 , further including:
removing the base plate; and
forming a second interconnect structure over a second surface of the semiconductor die opposite the first surface of the semiconductor die.
11. The method of claim 7 , further including planarizing the first encapsulant to the semiconductor die.
12. The method of claim 7 , wherein the first encapsulant extends above the conductive posts.
13. The method of claim 7 , wherein the first encapsulant includes a photosensitive material.
14. A semiconductor device, comprising:
a prefabricated substrate including a base plate and a plurality of conductive posts extending from the base plate;
a photosensitive material disposed over the base plate and around the conductive posts;
a semiconductor die disposed within an opening formed in a first surface of the photosensitive material over the base plate of the prefabricated substrate; and
an encapsulant deposited over the semiconductor die within the opening in the photosensitive material.
15. The semiconductor device of claim 14 , further including an interconnect structure formed over the first surface of the photosensitive material.
16. The semiconductor device of claim 14 , wherein the first surface of the photosensitive material is coplanar with a surface of the semiconductor die.
17. The semiconductor device of claim 14 , wherein the prefabricated substrate includes copper.
18. A semiconductor device, comprising:
a copper substrate including a base plate and a conductive post extending from the base plate;
a photosensitive material disposed over the base plate and around the conductive post; and
a semiconductor die disposed over the base plate of the copper substrate and within an opening extending from a first surface of the photosensitive material to a second surface of the photosensitive material opposite the first surface.
19. The semiconductor device of claim 18 , further including an encapsulant deposited over the semiconductor die within the opening in the photosensitive material.
20. The semiconductor device of claim 18 , further including an interconnect structure formed over the first surface of the photosensitive material.
21. The semiconductor device of claim 18 , wherein the first surface of the photosensitive material is coplanar with a surface of the semiconductor die.
22. The semiconductor device of claim 18 , wherein the photosensitive material extends above the conductive posts.
23. A semiconductor device, comprising:
a substrate including a base plate and a conductive post extending from the base plate;
a first encapsulant disposed over the base plate and around the conductive post; and
a semiconductor die disposed within an opening extending from a first surface of the first encapsulant to a second surface of the first encapsulant opposite the first surface.
24. The semiconductor device of claim 23 , further including a second encapsulant deposited over the semiconductor die within the opening in the first encapsulant.
25. The semiconductor device of claim 23 , further including an interconnect structure formed over a first surface of the semiconductor die.
26. The semiconductor device of claim 23 , wherein the surface of the first encapsulant is coplanar with a surface of the semiconductor die.
27. The semiconductor device of claim 23 , wherein the first encapsulant includes a photosensitive material.
28. The semiconductor device of claim 23 , wherein the substrate includes copper.
29. A semiconductor device, comprising:
a conductive post;
a photosensitive material disposed around the conductive post;
a semiconductor die disposed within an opening formed in a first surface of the photosensitive material; and
an encapsulant deposited over the semiconductor die.
30. The semiconductor device of claim 29 , further including a first interconnect structure formed over a first surface of the semiconductor die.
31. The semiconductor device of claim 30 , further including a second interconnect structure formed over a second surface of the semiconductor die opposite the first surface of the semiconductor die.
32. The semiconductor device of claim 29 , wherein the first surface of the photosensitive material is coplanar with a surface of the semiconductor die.