Methods for increased array feature density
View Patent ↗A method is provided that includes forming completely distinct first features above a substrate, forming sidewall spacers on the first features, filling spaces between adjacent sidewall spacers with filler features, and removing the sidewall spacers. Numerous other aspects are provided.
1. A method comprising:
forming a plurality of completely distinct first features above a substrate;
forming sidewall spacers on the first features;
filling spaces between adjacent sidewall spacers with filler features; and
removing the sidewall spacers.
2. The method of claim 1 , wherein the substrate comprises a material selected from the group consisting of metal, a dielectric material, and silicon.
3. The method of claim 1 , wherein forming sidewall spacers comprises depositing a first layer on the first features.
4. The method of claim 3 , wherein the first layer comprises a nitride material.
5. The method of claim 1 , wherein the filler features comprise a selective material.
6. The method of claim 5 , wherein the selective material is applied using a directional gap fill technique.
7. The method of claim 5 , further comprising applying a carrier gas to the sidewall spacers prior to applying the selective material.
8. The method of claim 7 , wherein the carrier gas is selected from the group consisting of He, Ar, H 2 , Kr, Xe, and N 2 .
9. The method of claim 5 , further comprising applying an etchant gas to the sidewall spacers prior to applying the selective material.
10. The method of claim 9 , wherein the etchant gas comprises a gas selected from the group consisting of H 2 , F, Cl, and Br.
11. The method of claim 5 , wherein the selective material comprises a carbon material of the form C x H y , wherein x is an odd or even number greater than 1, and y is 2x.
12. The method of claim 5 , wherein the selective material comprises a material selected from the group consisting of carbon, tungsten, and silicon, and their associated isotopes.
13. The method of claim 1 , wherein the first features and the filler features comprise second features.
14. The method of claim 13 , wherein the second features have at least twice the density of the first features.
15. The method of claim 13 , wherein the first features comprise a pillar structure.
16. The method of claim 13 , wherein the second features comprise a two-dimensional structure.
17. The method of claim 13 , wherein the second features comprise a three-dimensional structure.
18. The method of claim 13 , wherein the second features are patterned using a surface activation technique.
19. The method of claim 13 , wherein the second features are patterned using plasma enhanced chemical vapor deposition (PECVD).
20. The method of claim 13 , wherein the second features comprise carbon.
21. The method of claim 13 , further comprising etching device layers above a substrate using the second features.
22. The method of claim 13 , further comprising forming a memory device using the second features.