Semiconductor device having wire studs as vertical interconnect in FO-WLP
A semiconductor device has a substrate and semiconductor die disposed over a first surface of the substrate. A wire stud is attached to the first surface of the substrate. The wire stud includes a base portion and stem portion. A bonding pad is formed over a second surface of the substrate. An encapsulant is deposited over the substrate, semiconductor die, and wire stud. A portion of the encapsulant is removed by LDA to expose the wire stud. A portion of the encapsulant is removed by LDA to expose the substrate. An interconnect structure is formed over the encapsulant and electrically connected to the wire stud and semiconductor die. A bump is formed over the interconnect structure. A semiconductor package is disposed over the encapsulant and electrically connected to the substrate. A discrete semiconductor device is disposed over the encapsulant and electrically connected to the substrate.
1. A semiconductor device, comprising:
a substrate;
a semiconductor die mounted to a first surface of the substrate;
a wire stud including a base and wire stem extending from the base with the base attached to the first surface of the substrate, wherein a height of the wire stud is less than or equal to a height of the semiconductor die;
an encapsulant deposited over the semiconductor die, wire stud, the first surface of the substrate, and a second surface of the substrate opposite the first surface of the substrate; and
an interconnect structure formed over the encapsulant and extending to the wire stud.
2. The semiconductor device of claim 1 , further including a bonding pad formed over the second surface of the substrate.
3. The semiconductor device of claim 1 , further including a semiconductor package disposed over the second surface of the substrate.
4. The semiconductor device of claim 1 , further including a discrete semiconductor device disposed over the second surface of the substrate.
5. A semiconductor device, comprising:
a substrate;
a semiconductor die mounted to a first surface of the substrate;
a wire stud including a base and wire stem extending from the base with the base attached to the first surface of the substrate, wherein a height of the wire stud is less than or equal to a height of the semiconductor die; and
an encapsulant deposited over the semiconductor die, and wire stud, the first surface of the substrate, and a second surface of the substrate opposite the first surface of the substrate.
6. The semiconductor device of claim 5 , further including an interconnect structure formed over the encapsulant.
7. The semiconductor device of claim 6 , wherein the interconnect structure is electrically coupled to the wire stud.
8. The semiconductor device of claim 5 , further including a bonding pad formed over the second surface of the substrate.
9. The semiconductor device of claim 8 , wherein a surface of the encapsulant is coplanar with a surface of the bonding pad.
10. The semiconductor device of claim 5 , further including a semiconductor package disposed over the second surface of the substrate.
11. The semiconductor device of claim 5 , wherein the encapsulant is deposited over the second surface of the substrate.
12. A semiconductor device, comprising:
a substrate;
a semiconductor die mounted to a first surface of the substrate;
a wire stud including a base and stem extending from the base attached to the first surface of the substrate, wherein a height of the wire stud is less than or equal to a height of the semiconductor die; and
an encapsulant deposited over the first surface of the substrate and wire stud.
13. The semiconductor device of claim 12 , further including an interconnect structure formed over the encapsulant.
14. The semiconductor device of claim 12 , wherein the encapsulant is deposited over a second surface of the substrate opposite the first surface of the substrate.
15. The semiconductor device of claim 12 , further including a bonding pad formed over a second surface of the substrate opposite the first surface of the substrate.
16. The semiconductor device of claim 12 , further including a semiconductor package disposed over a second surface of the substrate opposite the first surface of the substrate.