Semiconductor device and method of forming non-linear interconnect layer with extended length for joint reliability
A semiconductor device has a substrate and first conductive layer formed over the substrate. An insulating layer is formed over the first substrate with an opening over the first conductive layer. A second conductive layer is formed within the opening of the insulating layer. A portion of the second conductive layer is removed to expose a horizontal surface and side surfaces of the second conductive layer below a surface of the insulating layer. The second conductive layer has non-linear surfaces to extend a contact area of the second conductive layer. The horizontal surface and side surfaces can be stepped surfaces or formed as a ring. A third conductive layer is formed over the second conductive layer. A plurality of bumps is formed over the horizontal surface and side surfaces of the second conductive layer. A semiconductor die is mounted to the substrate.
1. A method of making a semiconductor device, comprising:
providing a first substrate including a first conductive layer;
forming an insulating layer over the first substrate;
forming a second conductive layer within an opening of the insulating layer; and
removing a portion of the second conductive layer to leave a nonlinear surface of the second conductive layer below a surface of the insulating layer.
2. The method of claim 1 , further including:
providing a semiconductor die including a plurality of bumps; and
disposing the semiconductor die over the first substrate with the bumps covering the second conductive layer.
3. The method of claim 2 , further including:
providing a second substrate; and
disposing the first substrate and semiconductor die over the second substrate.
4. The method of claim 1 , further including removing a portion of the insulating layer from a horizontal surface.
5. The method of claim 1 , further including forming the second conductive layer including a ring shape.
6. The method of claim 1 , further including forming a third conductive layer over the second conductive layer.
7. A method of making a semiconductor device, comprising:
providing a substrate;
forming a first conductive layer over the substrate;
forming an insulating layer over the first conductive layer; and
forming a second conductive layer within an opening of the insulating layer and below a surface of the insulating layer, the second conductive layer including a non-linear surface extending a contact area of the second conductive layer.
8. The method of claim 7 , wherein forming the second conductive layer includes removing a portion of the second conductive layer to form the non-linear surface of the second conductive layer.
9. The method of claim 7 , further including:
providing a semiconductor die including a plurality of bumps; and
disposing the semiconductor die over the substrate with the bumps covering the second conductive layer.
10. The method of claim 7 , further including forming the second conductive layer with stepped surfaces.
11. The method of claim 7 , further including forming the second conductive layer including a ring shape.
12. The method of claim 7 , further including forming a third conductive layer over the second conductive layer.
13. The method of claim 7 , further including forming the opening in the insulating layer using laser direct ablation.
14. A method of making a semiconductor device, comprising:
providing a substrate including a conductive via;
forming an insulating layer over the substrate;
forming a first conductive layer within a first opening of the insulating layer over the conductive via and below a top surface of the insulating layer; and
forming a second opening between a side surface of the insulating layer and a side surface of the first conductive layer.
15. The method of claim 14 , wherein forming the first conductive layer further includes removing a portion of the first conductive layer to form a non-linear surface of the first conductive layer.
16. The method of claim 15 , further including:
providing a semiconductor die including a plurality of bumps; and
disposing the semiconductor die over the substrate with the bumps covering the non-linear surface of the first conductive layer.
17. The method of claim 14 , further including removing a portion of the insulating layer to leave the side surface of the first conductive layer below the surface of the insulating layer.
18. The method of claim 14 , further including forming the first conductive layer including a ring shape.
19. The method of claim 14 , further including forming a second conductive layer over the first conductive layer.
20. The method of claim 14 , further including forming the first opening in the insulating layer using laser direct ablation.
21. A semiconductor device, comprising:
a substrate including a conductive via;
an insulating layer formed over the conductive via; and
a first conductive layer formed within a first opening of the insulating layer and below a top surface of the insulating layer, including a second opening formed between a side surface of the insulating layer and a side surface of the first conductive layer.
22. The semiconductor device of claim 21 , further including:
a semiconductor die; and
a plurality of bumps disposed between the semiconductor die and substrate with the bumps covering the first conductive layer.
23. The semiconductor device of claim 21 , wherein the first conductive layer is formed including a ring shape.
24. The semiconductor device of claim 21 , further including a second conductive layer formed over the first conductive layer.