Controlled metal extrusion opening in semiconductor structure and method of forming
Aspects of the present invention relate to a controlled metal extrusion opening in a semiconductor structure. Various embodiments include a semiconductor structure. The structure includes an aluminum layer. The aluminum layer includes an aluminum island within the aluminum layer, and a lateral extrusion receiving opening extending through the aluminum layer adjacent the aluminum island. The opening includes a lateral extrusion of the aluminum layer of the semiconductor structure. Additional embodiments include a method of forming a semiconductor structure. The method can include forming an aluminum layer over a titanium layer. The aluminum layer includes an aluminum island within the aluminum layer. The method can also include forming an opening extending through the aluminum layer adjacent the aluminum island within the aluminum layer. The opening includes a lateral extrusion of the aluminum layer of the semiconductor layer.
1. A semiconductor structure comprising:
an aluminum layer including:
an aluminum island within the aluminum layer for creating an active circuit area of the semiconductor structure; and
an opening extending through the aluminum layer in a non-active circuit area of the semiconductor structure adjacent the aluminum island, the opening including a lateral extrusion of the aluminum layer of the semiconductor structure.
2. The semiconductor structure of claim 1 , further comprising a substantially ring-shaped opening extending through the aluminum layer, the substantially ring-shaped opening surrounding the aluminum island within the aluminum layer.